BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD242 Series 40 W at 25C Case Temperature 3 A Continuous Collector Current B 1 5 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 ) BD241B Collector-emitter voltage (IC = 30 mA) VCER 115 45 V CEO Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 60 80 V V 100 BD241C Continuous collector current 90 BD241C BD241B Emitter-base voltage 70 BD241 BD241A UNIT 55 BD241 BD241A VALUE VEBO 5 V IC 3 A ICM 5 A IB 1 A Ptot 40 W Ptot 2 W 1/2LIC2 32 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 250 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.32 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD241 45 BD241A 60 BD241B 80 BD241C 100 TYP MAX V VCE = 55 V VBE = 0 BD241 0.2 Collector-emitter VCE = 70 V VBE = 0 BD241A 0.2 cut-off current VCE = 90 V VBE = 0 BD241B 0.2 VCE = 115 V VBE = 0 BD241C 0.2 Collector cut-off VCE = 30 V IB = 0 BD241/241A 0.3 current VCE = 60 V IB = 0 BD241B/241C 0.3 VEB = 5V IC = 0 Forward current VCE = 4V IC = 1A transfer ratio VCE = 4V IC = 3A 0.6 A IC = 3A 4V IC = 3A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IB = VCE = UNIT mA mA 1 mA (see Notes 5 and 6) 1.2 V (see Notes 5 and 6) 1.8 V 25 (see Notes 5 and 6) 10 VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 3.125 C/W 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time VBE(off) = -3.7 V RL = 20 tp = 20 s, dc 2% 0.3 s 1 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V tp = 300 s, duty cycle < 2% TC = 25C TC = 80C 100 10 0*01 0*1 1*0 10 TCS631AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AH 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1*0 0*1 IC = IC = IC = IC = 100 mA 300 mA 1A 3A 0*01 0*1 IC - Collector Current - A 1*0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*0 TCS631AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25C 0*9 0*8 0*7 0*6 0*5 0*01 0*1 1*0 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AG tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 BD241 BD241A BD241B BD241C 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AA Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.