AP25T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement Fast Switching Characteristic BVDSS 30V RDS(ON) 35m ID G 20A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP25T03GJ) is available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current 20 A ID@TC=100 Continuous Drain Current 12 A 45 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 20.8 W Linear Derating Factor 0.16 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 6 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Data & specifications subject to change without notice 200803053-1/4 AP25T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 35 m VGS=4.5V, ID=7A - - 55 m VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=12A - 13 - S VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=20V - - 100 nA ID=12A - 6 10 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=12A - 200 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 10 - ns tf Fall Time RD=1.25 - 3 - ns Ciss Input Capacitance VGS=0V - 440 705 pF Coss Output Capacitance VDS=25V - 105 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=12A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=12A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 6 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP25T03GH/J 50 50 10V 10V 7.0V o T C =25 C o T C = 150 C ID , Drain Current (A) ID , Drain Current (A) 7.0V 40 40 30 5.0V 4.5V 20 10 30 5.0V 20 4.5V V G =3.0V 10 V G =3.0V 0 0 0 1 2 3 4 5 0 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 5 Fig 2. Typical Output Characteristics 1.6 105 ID=7A I D = 12 A V G =10V 1.4 o 85 T C =25 C Normalized RDS(ON) RDS(ON) (m ) 2 V DS , Drain-to-Source Voltage (V) 65 1.2 1.0 45 0.8 25 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.8 Normalized VGS(th) (V) 8 6 IS (A) T j =150 o C T j =25 o C 4 1.4 1 0.6 2 0.2 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP25T03GH/J f=1.0MHz 14 1000 ID=12A C iss V DS =15V V DS =20V V DS =24V 10 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss 100 C rss 4 2 0 10 0 4 8 12 16 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thjc) 1 10 ID (A) 100us 1ms 10ms 100ms DC 1 o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 0.1 1 10 100 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG V DS =5V ID , Drain Current (A) 25 T j =25 o C 20 QG T j =150 o C 4.5V QGS 15 QGD 10 5 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4