ISP817-32 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 Package Code EE 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD l 2.54 1 2 7.0 6.0 4 3 1.2 - G form - SMD approved to CECC 00802 Certified to EN60950 by :- 5.08 4.08 7.62 4.0 3.0 13 Max 0.5 Nemko - Certificate No. P96102022 3.0 DESCRIPTION The ISP817-32 optically coupled isolator consists of an infrared light emitting diode and NPN silicon photo transistor in space efficient dual in line plastic package. Dimensions in mm 0.5 3.35 0.26 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l Specially Selected Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO ( 35Vmin ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT 0.6 0.1 10.46 9.86 1.25 0.75 OPTION G 7.62 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 2/11/06 DC93092 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 1.2 1.4 10 V V A IF = 20mA IR = 10A VR = 6V 100 V V nA IC = 1mA IE = 100A VCE = 20V % % 1mA IF , 5V VCE 0.4mA IF , 5V VCE V 20mA IF , 1mA IC VRMS VPK See note 1 See note 1 s s VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100 35 6 Current Transfer Ratio (CTR) (Note 2) 75 35 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 0.2 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 Note 2 2/11/06 TEST CONDITION 4 3 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DC93092 150 100 50 0 -30 0 25 50 75 100 125 6 5 3 2 1 0 0 5 15 Collector Current vs. Collector-emitter Voltage 60 50mA 50 TA = 25C 30mA Collector current IC (mA) 50 Forward current IF (mA) 10 Forward current IF (mA) Forward Current vs. Ambient Temperature 40 30 20 10 0 20mA 40 15mA 30 10mA 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 320 0.14 0.12 Current transfer ratio CTR (%) Collector-emitter saturation voltage VCE(SAT) (V) TA = 25C 4 Ambient temperature TA ( C ) IF = 20mA IC = 1mA 0.10 0.08 0.06 0.04 0.02 280 240 200 160 120 80 VCE = 5V TA = 25C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( C ) 2/11/06 15mA =1mA 3mA 5mA 10mA Collector-emitter Saturation Voltage vs. Forward Current Ic Collector power dissipation PC (mW) 200 Collector-emitter saturation voltage VCE(SAT) (V) Collector Power Dissipation vs. Ambient Temperature 100 1 2 5 10 20 Forward current IF (mA) DC93092 50