BC546 THRU BC549 Small Signal Transistors (NPN) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549 is a low-noise type and available in groups B and C. As complementary types, the PNP transistors BC556 ... BC559 are recommended. max. .022 (0.55) On special request, these transistors are also .098 (2.5) manufactured in the pin configuration TO-18. E C MECHANICAL DATA B Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage BC546 BC547 BC548, BC549 VCBO VCBO VCBO 80 50 30 V V V Collector-Emitter Voltage BC546 BC547 BC548, BC549 VCES VCES VCES 80 50 30 V V V Collector-Emitter Voltage BC546 BC547 BC548, BC549 VCEO VCEO VCEO 65 45 30 V V V Emitter-Base Voltage BC546, BC547 BC548, BC549 VEBO VEBO 6 5 V V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Peak Emitter Current -IEM 200 mA Power Dissipation at Tamb = 25 C Ptot 5001) mW Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C 1) 4/98 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case BC546 THRU BC549 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hfe hfe hfe hie hie hie hoe hoe hoe - - - 1.6 3.2 6 - - - 220 330 600 2.7 4.5 8.7 18 30 60 - - - 4.5 8.5 15 30 60 110 - - - k k k S S S hre hre hre - - - 1.5 * 10-4 2 * 10-4 3 * 10-4 - - - - - - hFE hFE hFE - - - 90 150 270 - - - - - - hFE hFE hFE 110 200 420 180 290 500 220 450 800 - - - hFE hFE hFE - - - 120 200 400 - - - - - - Thermal Resistance Junction to Ambient Air RthJA - - 2501) K/W Collector Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VCEsat VCEsat - - 80 200 200 600 mV mV Base Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VBEsat VBEsat - - 700 900 - - mV mV Base-Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA VBE VBE 580 - 660 - 700 720 mV mV BC546 BC547 ICES ICES - - 0.2 0.2 15 15 nA nA BC548, BC549 ICES - 0.2 15 nA BC546 BC547 ICES ICES - - - - 4 4 A A h-Parameters at VCE = 5 V, IC = 2 mA, f = 1 kHz, Small Signal Current Gain Current Gain Group A B C Current Gain Group A Input Impedance B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain at VCE = 5 V, IC = 10A Current Gain Group A B C at VCE = 5 V, IC = 2 mA Current Gain Group A B C at VCE = 5 V, IC = 100 mA Current Gain Group A B C Collector-Emitter Cutoff Current at VCE = 80 V at VCE = 50 V at VCE = 30 V at VCE = 80 V, Tj = 125 C at VCE = 50 V, Tj = 125 C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case BC546 THRU BC549 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit ICES - - 4 4 A A Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz fT - 300 - MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz CCBO - 3.5 6 pF Emitter-Base Capacitance at VEB = 0.5 V, f = 1 MHz CEBO - 9 - pF F - 2 10 dB BC548 BC549 F - 1.2 4 dB BC549 F - 1.4 4 dB at VCE = 30 V, Tj = 125 C BC548, BC549 Noise Figure at VCE = 5 V, IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC546, BC547 at VCE = 5 V, IC = 200 A, RG = 2 k, f = 30...15000 Hz RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549