FEATURES
MECHAN IC AL DATA
Case: TO -92 Plasti c Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Tran si stors (NPN)
B
E
C
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C ambient temperature unless otherwise specified
.098 (2.5)
max. ∅ .022 (0.55)
4/98
BC546 THRU BC549
Symbol Value Unit
Collector-Base Voltage BC546
BC547
BC548, BC 549
VCBO
VCBO
VCBO
80
50
30
V
V
V
Collector-Emitter Voltage BC546
BC547
BC548, BC 549
VCES
VCES
VCES
80
50
30
V
V
V
Collector-Emitter Voltage BC546
BC547
BC548, BC 549
VCEO
VCEO
VCEO
65
45
30
V
V
V
Emitter-Base Voltage BC546, BC 547
BC548, BC 549 VEBO
VEBO 6
5V
V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Peak Emitter Current –IEM 200 mA
Pow e r Dissipation at Tamb = 25 °C Ptot 5001) mW
Junction Temperature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
NPN Silicon Epitaxial Planar Transistors
These transistors are subdivided into three groups
A, B and C according to their current gain. The type
BC546 is available in groups A and B, how-
ever, the types BC547 and BC548 can be
supplied in all three groups. The BC549 is a
low-noise type and available in groups B and
C. As complementary types, the PNP transis-
tors BC556 … BC559 are recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
♦
♦
♦
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min. Typ. Max. Unit
h-Parameters at VCE = 5 V, IC = 2 mA ,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Volt age Tr ans fer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
kΩ
kΩ
kΩ
µS
µS
µS
–
–
–
DC Cur r en t G ain
at VCE = 5 V, IC = 10µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
at VCE = 5 V, IC = 100 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
–
–
–
110
200
420
–
–
–
90
150
270
180
290
500
120
200
400
–
–
–
220
450
800
–
–
–
–
–
–
–
–
–
–
–
–
Thermal Resistance J unct i on to Ambient Air RthJA – – 2501) K/W
Coll ector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA VCEsat
VCEsat –
–80
200 200
600 mV
mV
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA VBEsat
VBEsat –
–700
900 –
–mV
mV
Base- Emi tt er Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA VBE
VBE 580
–660
–700
720 mV
mV
Collector-Emitter Cutoff Current
at VCE = 80 V BC546
at VCE = 50 V BC547
at VCE = 30 V BC548, BC549
at VCE = 80 V, Tj = 125 °C BC546
at VCE = 50 V, Tj = 125 °C BC547
ICES
ICES
ICES
ICES
ICES
–
–
–
–
–
0.2
0.2
0.2
–
–
15
15
15
4
4
nA
nA
nA
µA
µA
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
B C 546 THRU BC549
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min. Typ. Max. Unit
at VCE = 30 V, Tj = 125 °C BC548, BC549 ICES ––4
4µA
µA
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz fT– 300 – MHz
Collec tor-Base Capacitance
at VCB = 10 V, f = 1 MHz CCBO –3.56pF
Emitter-Base Capacitance
at VEB = 0.5 V, f = 1 MHz CEBO –9–pF
Noise Figure
at VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 1 kHz, ∆f = 200 Hz BC546, BC547
BC548
BC549
at VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30…15000 Hz BC549
F
F
F
–
–
–
2
1.2
1.4
10
4
4
dB
dB
dB
B C 546 THRU BC549
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
