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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. QSE113 / QSE114 Plastic Silicon Infrared Phototransistor Features Description * * * * * * * * The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. NPN Silicon Phototransistor Package Type: Sidelooker Medium Wide Reception Angle, 50 Package Material and Color: Black Epoxy Matched Emitter: QEE113 Daylight Filter High Sensitivity Blue dot marking on the top side Package Dimensions(1, 2) 0.175 (4.44) 0.087 (2.22) 0.050 (1.27) O 0.065 (1.65) 0.200 (5.08) O 0.095 (2.41) 0.500 (12.70) MIN EMITTER COLLECTOR Schematic 0.020 (0.51) SQ. (2X) Collector 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM Emitter Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. (c) 2002 Fairchild Semiconductor Corporation QSE113 / QSE114 Rev. 2.1 www.fairchildsemi.com 1 QSE113 / QSE114 -- Plastic Silicon Infrared Phototransistor May 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit TOPR Operating Temperature -40 to +100 C TSTG Storage Temperature -40 to +100 C (4, 5, 6) 240 for 5 sec C (4, 5) TSOL-I Soldering Temperature (Iron) 260 for 10 sec C VCE Collector Emitter Voltage 30 V VEC Emitter Collector Voltage 5 V 100 mW TSOL-F PD Soldering Temperature (Flow) (3) Power Dissipation Notes: 3. Derate power dissipation linearly 1.33 mW/C above 25C. 4. RMA flux is recommended. 5. Methanol or isopropyl alcohols are recommended as cleaning agents. 6. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical / Optical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit PS Peak Sensitivity 880 nm Reception Angle 25 Collector Emitter Dark Current VCE = 10 V, Ee = 0 BVCEO Collector-Emitter Breakdown IC = 1 mA 30 V BVECO Emitter-Collector Breakdown IE = 100 A 5 V lCEO IC(ON) On-State Collector QSE113 Current(7) On-State Collector Current(7) QSE114 0.25 nA 1.50 Ee = 0.5 mW/cm2, VCE = 5 V mA 1.00 Saturation Voltage(7) Ee = 0.5 mW/cm2, IC = 0.1 mA tr Rise Time tf Fall Time IC = 1 mA, VCC = 5 V, RL = 100 VCE(SAT) 100 0.4 V 8 s 8 s Note: 7. = 880 nm (AlGaAs) (c) 2002 Fairchild Semiconductor Corporation QSE113 / QSE114 Rev. 2.1 www.fairchildsemi.com 2 QSE113 / QSE114 -- Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings 101 I C(ON) - Light Current (mA) VCE = 5V GaAs Light Source 110 90 100 80 70 120 60 130 50 40 140 100 30 150 20 160 10 170 10-1 0.1 180 1.0 1 0.8 0.6 0.4 0.0 0.2 0.2 0.4 0.6 0.8 0 1.0 2 Ee - Radiant Intensity (mW/cm ) Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve 101 I L - Normalized Light Current I CEO - Dark Current (nA) 101 100 10-1 10-2 100 Ie = 1mW/cm 2 Ie = 0.5mW/cm 2 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25C 10-3 0 5 10 15 20 25 10-2 0.1 30 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage 104 I CEO - Normalized Dark Current Normalized to: VCE = 25V 103 VCE = 25V TA = 25C VCE = 10V 102 101 100 10-1 25 50 75 100 TA - Ambient Temperature ( C) Figure 5. Dark Current vs. Ambient Temperature (c) 2002 Fairchild Semiconductor Corporation QSE113 / QSE114 Rev. 2.1 www.fairchildsemi.com 3 QSE113 / QSE114 -- Plastic Silicon Infrared Phototransistor Typical Performance Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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