1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2000 MHz to 2200 MHz.
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF8G22LS-160BV
Power LDMOS transistor
Rev. 3 — 1 September 2015 Product data sheet
Table 1. Typical performance
Ty pical RF performance at Tcase = 25
C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) GpDACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 1300 32 55 18.0 32 31 [1]
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Product data sheet Rev. 3 — 1 September 2015 2 of 13
BLF8G22LS-160BV
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect MTTF.
5. Recommended operating conditions
6. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain
2gate
3source [1]
4,5 video decoupling
6 sense gate
7sense drain
154
27
6
3
aaa-004156
1, 4, 5 7
6
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF8G22LS-160BV - earless flanged LDMOST ceramic package; 6 leads SOT1120B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
VGS(sense) sense gate-source voltage 0.5 +9 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
Tcase case temperature [1] - 150 C
Table 5. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
Tcase case temperature 40 - +125 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL= 55 W 0.27 K/W
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Product data sheet Rev. 3 — 1 September 2015 3 of 13
BLF8G22LS-160BV
Power LDMOS transistor
7. Characteristics
8. Test information
8.1 Ruggedness in class-AB operation
The BLF8G22LS-160BV is capable to withstand a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;
IDq = 1300 mA; PL= 160 W; f = 2110 MHz.
Table 7. Characteristics
Tj = 25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=2.16mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 216 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 4.5 A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V
-40-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 450 nA
gfs forward transconductance VDS =10V; I
D= 10.8 A - 16 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=7.56A
-0.06-
IDq quiescent drain current main transitor:
VDS =32 V
sense transitor:
IDS = 23.4 mA;
VDS =30.4V
1175 1300 1425 mA
Table 8. Application information
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % proba bility on CCDF; 3GPP test model 1; 64
DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at
VDS = 32 V; IDq = 1300 mA; Tcase = 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 55 W 16.8 18.0 19.7 dB
RLin input return loss PL(AV) = 55 W - 13 7dB
Ddrain efficiency PL(AV) = 55 W 29 32 - %
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 55 W - 31 28 dBc
Table 9. Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 DPCH; f = 2167.5 MHz; RF performance at VDS = 32 V; IDq = 1300 mA; Tcase = 25
C;
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PAROoutput peak-to-average ratio PL(AV) =115W;
at 0.01 % probability on CCDF
3.9 4.3 - dB
PL(M) peak output power 290 310 - W
BLF8G22LS-160BV#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 1 September 2015 4 of 13
BLF8G22LS-160BV
Power LDMOS transistor
8.2 Impedance information
[1] ZS and ZL defined in Figure 1.
8.3 VBW in class-AB operation
The BLF8G22LS-160BV shows 100 MHz (typical) video bandwidth in class-AB test circuit
in 2.1 GHz band at 32 V and 1.3 A.
Table 10. Typical impedance
IDq = 1300 mA; main transistor VDS = 32 V.
f ZS[1] ZL[1]
(MHz) () ()
2110 2.2 j4.6 1.4 j2.8
2140 2.1 j4.5 1.4 j2.6
2170 2.1 j4.3 1.3 j2.4
Fig 1. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
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Product data sheet Rev. 3 — 1 September 2015 5 of 13
BLF8G22LS-160BV
Power LDMOS transistor
8.4 CW pulse
VDS = 32 V; IDq = 1300 mA.
(1) Gp at f = 2110 MHz
(2) Gp at f = 2140 MHz
(3) Gp at f = 2170 MHz
(4) D at f = 2110 MHz
(5) D at f = 2140 MHz
(6) D at f = 2170 MHz
VDS = 32 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2. Power gain and drain efficiency as function of
load power; typical values
Fig 3. Input return loss as a function of load power;
typical values
aaa-004158
28 32 36 40 44 48 52 56
14 0
15 10
16 20
17 30
18 40
19 50
20 60
PL (dBm)
Gp
p
p
(dB)
ηD
(%)
(3)
(2)
(1)
(4)
(5)
(6)
aaa-004159
28 32 36 40 44 48 52 56
-30
-25
-20
-15
-10
-5
0
PL (dBm)
RLin
(dB)
(1)
(2)
(3)
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Product data sheet Rev. 3 — 1 September 2015 6 of 13
BLF8G22LS-160BV
Power LDMOS transistor
8.5 2-carrier W-CDMA
VDS = 32 V; IDq = 1300 mA.
(1) Gp at f = 2115 MHz
(2) Gp at f = 2140 MHz
(3) Gp at f = 2165 MHz
(4) D at f = 2115 MHz
(5) D at f = 2140 MHz
(6) D at f = 2165 MHz
VDS = 32 V; VGS =32V; f=5MHz; =46%.
(1) ACPR5M at f = 2115 MHz
(2) ACPR5M at f = 2140 MHz
(3) ACPR5M at f = 2165 MHz
(4) ACPR10M at f = 2115 MHz
(5) ACPR10M at f = 2140 MHz
(6) ACPR10M at f = 2165 MHz
Fig 4. Power gain and drain efficiency as function of
load power; typical values
Fig 5. Adjacent channel power ratio (5MHz) and
adjacent channel power ratio (10MHz) as
function of load power; typical values
VDS = 32 V; IDq = 1300 mA.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
Fig 6. Peak to average power ratio as a function of load power; typical values
aaa-004160
28 32 36 40 44 48 52 56
14 0
15 10
16 20
17 30
18 40
19 50
20 60
PL (dBm)
Gp
p
p
(dB)
ηD
(%)
(3)
(2)
(1)
(4)
(5)
(6)
aaa-004161
28 32 36 40 44 48 52
-70 -70
-60 -60
-50 -50
-40 -40
-30 -30
-20 -20
-10 -10
PL (dBm)
ACPR5M
(dBc)
ACPR10M
(dBc)
(1)
(2)
(3)
(4)
(5)
(6)
aaa-004162
28 32 36 40 44 48 52
4
5
6
7
8
9
PL (dBm)
PAR
(dB)
(1)
(2)
(3)
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Product data sheet Rev. 3 — 1 September 2015 7 of 13
BLF8G22LS-160BV
Power LDMOS transistor
8.6 2-tone VBW
VDS = 32 V; IDq = 1300 mA; fc= 2140 MHz.
(1) IMD3 low
(2) IMD3 high
(3) IMD5 low
(4) IMD5 high
(5) IMD7 low
(6) IMD7 high
Fig 7. VBW capability in class-AB test circuit
aaa-004163
1 10 102103
-70
-50
-30
-10
10
carrier spacing (MHz)
IMD
(dBc)
(1)
(2)
(3)
(4)
(5)
(6)
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Product data sheet Rev. 3 — 1 September 2015 8 of 13
BLF8G22LS-160BV
Power LDMOS transistor
8.7 Test circuit
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] TDK or capacitor of same quality.
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.765 mm;
thickness copper plating = 35 m.
See Table 11 for a list of components.
Fig 8. Component layout for class-AB production test circuit
Table 11. List of components
For test circuit see [8].
Component Description Value Remarks
C1, C2, C10, C11, C13,
C15
multilayer ceramic chip capacitor 12 pF [1] ATC100B
C5, C6 multilayer ceramic chip capacitor 120 pF [1] ATC100B
C3, C4, C12, C16,
C18, C19
multilayer ceramic chip capacitor 4.7 F, 50 V [2] Murata
C14 multilayer ceramic chip capacitor 4.7 F, 100 V [3] TDK
C15 electrolytic capacitor 470 F, 63 V
R1 SMD resistor 4.7 Philips 1206
R2 SMD resistor 470 Philips 1206
R3 SMD resistor 820 Philips 1206
R4 SMD resistor 12 Philips 1206
R5 SMD resistor 2200 Philips 1206
aaa-004157
60 mm
50 mm 50 mm
BLF8G22LS 160BV INPUT REV5
BLF8G22LS 160BV OUTPUT REV5
C6
C19
C18
C10
C12
C14C11
C16 C17
C15
C13
C1
R4 C3 R1 C2 C5
R2
C4
R3
R5
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Product data sheet Rev. 3 — 1 September 2015 9 of 13
BLF8G22LS-160BV
Power LDMOS transistor
9. Package outline
Fig 9. Package outline SOT1120B
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Product data sheet Rev. 3 — 1 September 2015 10 of 13
BLF8G22LS-160BV
Power LDMOS transistor
10. Abbreviations
11. Revision history
Table 12. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor
MTTF Mean Time To Failure
PAR Peak-to-Average Ratio
SMD Surface Mounted Device
VBW Video BandWidth
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF8G22LS-160BV#3 20150901 Product data sheet BLF8G22LS-160BV v.2
Modifications: •The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•Legal texts have been adapted to the new company name where appropriate.
BLF8G22LS-160BV v.2 20150501 Product data sheet - BLF8G22LS-160BV v.1
BLF8G22LS-160BV v.1 20120625 Product data sheet - -
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Product data sheet Rev. 3 — 1 September 2015 11 of 13
BLF8G22LS-160BV
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
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other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 3 — 1 September 2015 12 of 13
BLF8G22LS-160BV
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLF8G22LS-160BV
Power LDMOS transistor
© Ampleon The Netherlands B.V. 2015. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF8G22LS-160BV#3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Recommended operating conditions. . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
8.1 Ruggedness in class-AB operation . . . . . . . . . 4
8.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
8.3 VBW in class-AB operation . . . . . . . . . . . . . . . 4
8.4 CW pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8.5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
8.6 2-tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8.7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13