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TM
File Number 4780.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Intersil and Design is a trademark of Intersil Corporation. |Copyright © Intersil Corporation 2000
Star*Power™ is a trademark of Intersil Corporation.
IS-1009RH
Radiation Hardened 2.5V Reference
The Star*Pow er Radiation Hardened
IS-1009RH is a 2.5V shunt regulator
diode designed to provide a stable 2.5V
ref erence o ver a wide current range.
The device is exceptionally stable over a wide current range
and is designed to maintain stability over the full miitary
temperature range and over time. It operates and is
specified at a lower minimum current than other 1009 types.
The 0.2% reference tolerance is achieved by on-chip
trimming.
An adjustment terminal is provided to allow for the calibration
of system errors. The use of this terminal to adjust the
reference voltage does not effect the temperature
coefficient.
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to Single Event Latch-up
and have been specifically designed to provide highly
reliable performance in harsh radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00523. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.htm
Pinouts IS2-1009RH (TO-206AB CAN)
BOTTOM VIEW
ISYE-1009RH (SMD.5)
BOTTOM VIEW
Features
• Electrically Screened to SMD # 5962-00523
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose. . . . . . . . . . . . . . . . . . . 3 x 105 rad(Si) (Max)
- Latch-up Immune . . . . . . . . . . . . .Dielectrically Isolated
• Lower IMIN than Other 1009 Types . . . . . . . . . . . . 100µA
• Reverse Breakdown Voltage (VZ). . . . . . . . . . . . . . . . 2.5V
•V
Z vs. Change in Current (100µA to 10mA). . . . . . . . 6mV
•V
Z vs. Temp (-55oC to 125oC) . . . . . . . . . . . . . . . . . 15mV
• Max Reverse Breakdown Current . . . . . . . . . . . . . . 20mA
• Interchangeable with 1009 and 136 Industry Types
Applications
• Power Supply Monitoring
• Reference for 5V Systems
• A/D and D/A Reference
TM
2
13V-
V+
ADJ
1
2
3
V-
V+
ADJ
Ordering Information
ORDERING NUMBER INTERNAL
MKT. NUMBER TEMP. RANGE
(oC)
5962F0052301VXA IS2-1009RH-Q -55 to 125
5962F0052301QXA IS2-1009RH-8 -55 to 125
5962F0052301VYA ISYE-1009RH-Q -55 to 125
5962F0052301QYA ISYE-1009RH-8 -55 to 125
IS2-1009RH/Proto IS2-1009RH/Proto -55 to 125
ISYE-1009RH/Proto ISYE-1009RH/Proto -55 to 125
Data Sheet August 2000
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil Ltd.
8F-2, 96, Sec. 1, Chien-kuo North,
Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
Die Characteristics
DIE DIMENSIONS
1270µm x 1778µm (50 mils x 70 mils)
Thickness: 483µm±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si3N4) over Silox (SiO2)
Nitride Thickness: 4.0kű1.0kÅ
Silox Thickness: 12.0kű4.0kÅ
Top Metallization
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate
EBHF, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<1.0 x 105 A/cm2
Transistor Count
26
Metallization Mask Layout IS-1009RH
ADJ
V-
V+
IS-1009RH
