2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000BU / 2N7000TA Rev. 1.1.0 1
November 2013
2N7000BU / 2N7000TA
Advanced Small-Signal MOSFET
Features
• Fast Switching Times
• Improved Inductive Ruggedness
• Lower Input Capacitance
• Extended Safe Operating Area
• Improved High-Temperature Reliability
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwi se noted.
Note:
1. Repetitive rating: pulse width limited by maximum junction temperature.
Part Number Marking Package Packing Method
2N7000BU 2N7000 TO-92 3L Bulk
2N7000TA 2N7000 TO-92 3L Ammo
Symbol Parameter Value Unit
VDSS Drain-to-Source Voltage 60 V
ID Continuous Drain Current (TC = 25°C) 200 mA
Continuous Drain Current (TC = 100°C) 110
IDM Drain Current Pulsed(1) 1000 mA
VGS Gate-to-Source Voltage ±30 V
TJ, TSTG Operating Junction and S torage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes,
1/8-inch from Case for 5 Seconds 300 °C
Description
These N-channel enhancement m ode field effect transis-
tors are produced using Fairchild's proprietary, high cell
density, DMOS technology. These products minimize on-
state resistance while providing rugged, reliable, and fast
switching performance. They can be used in most appli-
cations requiring up to 400 mA DC and can deliver pulsed
currents up to 2 A. These products are particularly suited
for low-voltage, low-current applications, such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
1. Source 2. Gate 3. Drain
TO-92
1