rr AMP company Coming Attractions Avionics Pulsed Power Transistor, 1025 - 1 150 MHz 190W, TACAN Format PH1012-190 V1.00 Features NPN Silicon Microwave Power Transistor 7 : ~ . - 1209 (3248) Common Emitter Configuration 935 (23731 ~ * Broadband Class C Operation rr astm High Efficiency Interdigitated Geometry | ween * Diffused Emitter Ballasting Resistors von ioussos waa |, Gold Metalization System ! to Internal Input Impedance Matching + ses love Hermetic Metal/Ceramic Package gary za (328) | ty Absolute Maximum Ratings at 25C - 20) -3 0B)? US 10 48) Parameter Symbol Rating Units t Collector-Emitter Voltage Vees 65 Vv pe 397 1D0Be] 150 1381) aye iW} . 5040 (a1) Emitter-Base Voltage Veo 3.0 Vv oo ripe oes . ; Junction Temperature T, 200 C | ze i if c pewseae OP TES HOw vdast a . : Storage Temperature Tor -65 to +200 C i cep yas i ~ . 300 Wet UNLESS BIFERWISL NOTED, TOLERANUES ARE NCEE S + DOS" CMILI IME TERS = SMD Electrical Characteristics at 25C Parameter Symbol Min Max | Units Test Conditions Collector-Emitter Breakdown Voltage BV oes 65 v 1,=100mA Collector-Emitter Leakage Current loes - 20 mA | V,.=40V input Power Pay 63 | W_ | V,.=33V, Po,=190 W, F=1025, 1090, 1150 MHz, N1 Power Gain G, 48 - dB | V,.=33 V, Poy7=190 W, F=1025, 1090, 1150 MHz, N1 Collector Efficiency Ne 30 - % | V.-=33V, Po,,=190 W, F=1025, 1090, 1150 MHz, N1 Input Return Loss RL 10 - dB | V,.=33 V, Pay=190 W, F=1025, 1090, 1150 MHz, N1 Load Mismatch Stability VSWR-S - 1.5:1 - Vec=33 V, Poyy=190 W, F=1025, 1090, 1150 MHz, N14 Load Mismatch Tolerance VSWR-T 5:1 - V..233 V, P,,,;=190 W, F=1090 MHz, Nt N1: TACAN pulse format consists of two, 4.0 usec pulses separated by 11.5 usec for 150 pairs per second. Duty Factor=0.12% This Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final introduction. M/A-COM, Inc. 9-5 North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020