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CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M 6-Pin DIP High BVCEO Phototransistor Optocouplers Features Description High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package. MOC8106M) Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Package Outlines Applications Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Appliance Sensor Systems Industrial Controls Figure 1. Package Outlines Schematics ANODE 1 ANODE 1 6 NC CATHODE 2 5 COLLECTOR NC 3 6 BASE CATHODE 2 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M 5 COLLECTOR NC 3 4 EMITTER CNY171M/2M/3M/4M Figure 2. Schematics (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers October 2014 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm TS Case Temperature(1) 175 C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Note: 1. Safety limit values - maximum values allowed in the event of a failure. (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 www.fairchildsemi.com 2 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Units -40 to +125 C TOTAL DEVICE TSTG Storage Temperature TA Ambient Operating Temperature -40 to +100 C TJ Junction Temperature -40 to +125 C 260 for 10 seconds C 270 mW 2.94 mW/C TSOL PD Lead Solder Temperature Total Device Power Dissipation @ 25C (LED plus detector) Derate Linearly From 25C EMITTER IF Continuous Forward Current 60 mA VR Reverse Voltage 6 V 1.5 A IF (pk) PD Forward Current - Peak (1 s pulse, 300 pps) LED Power Dissipation 25C Ambient Derate Linearly From 25C 120 mW 1.41 mW/C DETECTOR Continuous Collector Current 50 mA VCEO Collector-Emitter Voltage 70 V VECO Emitter Collector Voltage 7 V 150 mW 1.76 mW/C IC PD Detector Power Dissipation @ 25C Derate Linearly from 25C (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 www.fairchildsemi.com 3 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Absolute Maximum Ratings TA = 25C unless otherwise specified. Individual Component Characteristics Symbol Parameters Test Conditions Device Min. Typ. Max. Units IF = 10 mA All Devices 1.0 1.15 1.50 V IF = 60 mA CNY17XM, CNY17FXM 1.0 1.35 1.65 V EMITTER VF Input Forward Voltage CJ Capacitance VF = 0 V, f = 1.0 MHz All Devices 18 IR Reverse Leakage Current VR = 6 V All Devices 0.001 All Devices 70 100 V pF 10 A DETECTOR Breakdown Voltage BVCEO Collector-to-Emitter IC = 1 mA, IF = 0 BVCBO Collector-to-Base IC = 10 A, IF = 0 CNY17XM 70 120 V BVECO Emitter-to-Collector IE = 100 A, IF = 0 All Devices 7 10 V Leakage Current ICEO Collector-to-Emitter VCE = 10 V, IF = 0 All Devices ICBO Collector-to-Base VCB = 10 V, IF = 0 CNY17XM 1 50 nA 20 nA Capacitance CCE Collector-to-Emitter VCE = 0, f = 1 MHz All Devices 8 pF CCB Collector-to-Base VCB = 0, f = 1 MHz CNY17XM 20 pF CEB Emitter-to-Base VEB = 0, f = 1 MHz CNY17XM 10 pF Transfer Characteristics Symbol Parameters Device Test Conditions Min. Typ. Max. Units COUPLED CTR Current Transfer Ratio IF = 10 mA, VCE = 10 V MOC8106M 50 150 % IF = 10 mA, VCE = 5 V CNY171M, CNY17F1M 40 80 % IF = 10 mA, VCE = 5 V CNY172M, CNY17F2M 63 125 % IF = 10 mA, VCE = 5 V CNY173M, CNY17F3M 100 200 % CNY174M, CNY17F4M 160 320 % 0.4 V IF = 10 mA, VCE = 5 V Collector-Emitter IC = 0.5 mA, IF = 5 mA VCE(SAT) Saturation Voltage IC = 2.5 mA, IF = 10 mA (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 MOC8106M CNY17XM/CNY17FXM www.fairchildsemi.com 4 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Electrical Characteristics TA = 25C unless otherwise specified. AC Characteristics Symbol Parameters Device Test Conditions Min. Typ. Max. Units NON-SATURATED SWITCHING TIME ton Turn-On Time IC = 2.0 mA, VCC = 10 V, RL = 100 toff Turn-Off Time td Delay Time All Devices 2.0 10.0 s IC = 2.0 mA, VCC = 10 V, RL = 100 All Devices 3.0 10.0 s IF = 10 mA, VCC = 5 V, RL = 75 CNY17XM/CNY17FXM 5.6 s tr Rise Time IF = 10 mA, VCC = 5 V, RL = 75 CNY17XM/CNY17FXM 4.0 s ts Storage Time IF = 10 mA, VCC = 5 V, RL = 75 CNY17XM/CNY17FXM 4.1 s tf Fall Time IF = 10 mA, VCC = 5 V, RL = 75 CNY17XM/CNY17FXM 3.5 s IF = 20 mA, VCC = 5 V, RL = 1 k CNY171M/F1M 5.5 s IF = 10 mA, VCC = 5 V, RL = 1 k CNY172M/3M/4M CNY17F2M/F3M/F4M 8.0 s IF = 20 mA, VCC = 5 V, RL = 1 k CNY171M/F1M 4.0 s IF = 10 mA, VCC = 5 V, RL = 1 k CNY172M/3M/4M CNY17F2M/F3M/F4M 6.0 s IF = 20 mA, VCC = 5 V, RL = 1 k CNY171M/F1M 34.0 s IF = 10 mA, VCC = 5 V, RL = 1 k CNY172M/3M/4M CNY17F2M/F3M/F4M 39.0 s IF = 20 mA, VCC = 5 V, RL = 1 k CNY171M/F1M 20.0 s IF = 10 mA, VCC = 5 V, RL = 1 k CNY172M/3M/4M CNY17F2M/F3M/F4M 24.0 s SATURATED SWITCHING TIMES td Delay Time tr Rise Time ts Storage Time tf Fall Time Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz RISO Isolation Resistance VI-O = 500 VDC, TA = 25C (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 Min. Typ. 4170 Units VACRMS 0.2 1011 Max. pF www.fairchildsemi.com 5 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Electrical Characteristics (Continued) 1.4 1.6 VCE = 5.0 V TA = 25C 1.4 Normalized to IF = 10 mA 1.2 IF = 5 mA 1.2 1.0 IF = 10 mA NORMALIZED CTR NORMALIZED CTR 1.0 0.8 0.6 0.8 IF = 20 mA 0.6 0.4 0.4 Normalized to: IF = 10 mA TA = 25C 0.2 0.2 -60 0.0 0 2 4 6 8 10 12 14 16 18 20 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Figure 3. Normalized CTR vs. Forward Current Figure 4. Normalized CTR vs. Ambient Temperature 1.0 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) IF - FORWARD CURRENT (mA) 0.9 IF = 20 mA 0.8 IF = 10 mA IF = 5 mA 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5.0 V 0.1 0.0 10 100 1000 1.0 0.9 0.8 VCE = 0.3 V IF = 20 mA 0.7 0.6 0.5 IF = 10 mA 0.4 0.3 IF = 5 mA 0.2 0.1 0.0 10 100 RBE - BASE RESISTANCE (k) 1000 RBE - BASE RESISTANCE (k) Figure 5. CTR vs. RBE (Unsaturated) Figure 6. CTR vs. RBE (Saturated) 1000 IF = 10 mA VCC = 10 V TA = 25C 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED (s) 100 Tf Toff 10 Ton Tr 1 0.1 0.1 1 10 3.5 3.0 2.5 2.0 1.5 1.0 100 1000 10000 100000 RBE - BASE RESISTANCE (k) Figure 8. Normalized ton vs. RBE Figure 7. Switching Speed vs. Load Resistor (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 4.0 0.5 10 100 R - LOAD RESISTOR (k) VCC = 10 V IC = 2 mA RL = 100 4.5 www.fairchildsemi.com 6 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Typical Performance Characteristics 1.8 1.7 1.3 VF - FORWARD VOLTAGE (V) NORMALIZED toff - (toff(RBE) / toff(open)) 1.4 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 VCC = 10V IC = 2mA RL = 100 0.4 0.3 1.6 1.5 1.4 TA = -55C 1.3 TA = 25C 1.2 TA = 100C 1.1 0.2 1.0 0.1 10 100 1000 10000 1 100000 Figure 9. Normalized toff vs. RBE VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 100 IF - LED FORWARD CURRENT (mA) RBE - BASE RESISTANCE (k) Figure 10. LED Forward Voltage vs. Forward Current 100 TA = 25C 10 1 IF = 2.5mA 0.1 IF = 20mA 0.01 IF = 5mA 0.001 0.01 IF = 10mA 0.1 1 10 IC - COLLECTOR CURRENT (mA) Figure 11. Collector-Emitter Saturation Voltage vs. Collector Current (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 www.fairchildsemi.com 7 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Typical Performance Characteristics (Continued) VCC 10% RL IC IF INPUT PULSE OUTPUT PULSE 90% INPUT OUTPUT (VCE) ts td tf tr ton toff Figure 12. Switching Test Circuit and Waveforms Reflow Profile 300 260C 280 260 > 245C = 42 s 240 220 200 180 C Time above 183C = 90 s 160 140 120 1.822C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 13. Reflow Profile (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 www.fairchildsemi.com 8 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Switching Test Circuit and Waveforms Part Number Package Packing Method CNY171M DIP 6-Pin Tube (50 Units) CNY171SM SMT 6-Pin (Lead Bend) Tube (50 Units) CNY171SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) CNY171TM DIP 6-Pin, 0.4" Lead Spacing Tube (50 Units) CNY171VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) CNY171SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) CNY171SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) CNY171TVM DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the MOC8106M device. Marking Information 1 V 3 CNY17-1 2 X YY Q 6 4 5 Figure 14. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., "4" 5 Digit Work Week, Ranging from "01" to "53" 6 Assembly Package Code (c)2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 www.fairchildsemi.com 9 CNY17XM, CNY17FXM, MOC8106M -- 6-Pin DIP High BVCEO Phototransistor Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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