inters;| Data Sheet 30A, 1200V Hyperfast Dual Diode The RHRG30120CC is a hyperfast dual diode with soft recovery characteristics (t,, < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49041. Ordering Information PART NUMBER PACKAGE BRAND RHRG30120CC TO-247 RHR30120C NOTE: When ordering, use the entire part number. Symbol Ay Ao RHRG30120CC File Number 3411.3 January 2000 Features * Hyperfast with Soft Recovery.................. <65ns * Operating Temperature................-..004- 175C * Reverse Voltage. .... 0... eee eee 1200V Avalanche Energy Rated Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Packaging JEDEC STYLE TO-247 ANODE 1 CATHODE (BOTTOM SIDE METAL) Absolute Maximum Ratings (Per Leg) Tc = 25C Peak Repetitive Reverse Voltage............... 00.00 Working Peak Reverse Voltage ..... 0.0.0.0... cece ee DC Blocking Voltage ..... 0.0... eee Average Rectified Forward Current... ....... 0.0.0.0... 00. e eee eee (To = 78C) Repetitive Peak Surge Current ......... 00.00.0000 cee eee (Square Wave, 20kHz) Nonrepetitive Peak Surge Current..........0... 0.0.00 eee eee (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation ............0..00.00 000 cee eee Avalanche Energy (See Figures 7and8)...................0.00., Operating and Storage Temperature... ...........0.0.0. 000 eee RHRG30120CC UNITS Lee VRRM 1200 Vv Lee cee eee VRwm 1200 Vv eee eee VR 1200 v eee IE(AV) 30 Vv Lect lFRM 60 Vv Lect lFsm 300 Vv eee eee Pp 125 Ww Lect Eave 30 mJ bee cece eens Tste: Ty -65 to 175 C 4-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000RHRG30120CC Electrical Specifications (Per Leg) Tc = 25C, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS VE lp =30A - - 3.2 Vv IF = 30A, Tc = 150C - - 26 V IR VR=1200V - - 250 HA VR = 1200V, To = 150C - - 1 mA ter lp = 1A, dip/dt = 100A/us - - 65 ns Ip = 30A, dif/dt = 100A/us - - 75 ns ta Ip = 30A, dif/dt = 100A/us - 48 - ns th Ip = 30A, dif/dt = 100A/us - 22 - ns ReJc - - 1.2 Cw DEFINITIONS Vf = Instantaneous forward voltage (pw = 300us, D = 2%). IR = Instantaneous reverse current. try = Reverse recovery time (See Figure 6), summation of tg + tp. tg = Time to reach peak reverse current (See Figure 6). ty = Time from peak Ipiy to projected zero crossing of IRjy based on a straight line from peak Imp through 25% of IRiy (See Figure 6). ReJc = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 200 100 10 I= FORWARD CURRENT (A) 0 05 #10 15 20 25 30 35 40 45 Vr, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE IR, REVERSE CURRENT (1A) 0.001 0 200 400 600 VR, REVERSE VOLTAGE (V) 800 1000 1200 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 intersilRHRG30120CC Typical Performance Curves (continued) 100 75 a8 e ter a WW = 50 a Fe ta 25 th 0 1 10 30 IB FORWARD CURRENT (A) FIGURE 3. t,,, tg AND th CURVES vs FORWARD CURRENT Test Circuits and Waveforms Vee AMPLITUDE AND Rg CONTROL dlf/dt t1 AND t2 CONTROL Ir DUT CURRENT SENSE | | Los * VGE =| Yop ty ro IGBT . FIGURE 5. t,;, TEST CIRCUIT Imax = 1.2254 L=40mH R<0.102 Eavi = V2L1? [Vecaviy(VR(avLy - Vb) Qy = IGBT (BVcES > DUT VR(AVL)) CURRENT FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT oy o oa o r= MN pe N So a 8 = z m 7 a = o e VY IF(av), AVERAGE FORWARD CURRENT (A) a a o N a 50 75 100 125 150 175 Tc, CASE TEMPERATE (C) FIGURE 4. CURRENT DERATING CURVE dif 0 FIGURE 6. ty; WAVEFORMS AND DEFINITIONS VAVL FIGURE 8 AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3 intersil