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IRF7324D1
FETKYä MOSFET / Schottky Diode
10/18/04
The FETKY family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques
to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
VDSS = -20V
RDS(on) = 0.27Ω
Schottky Vf = 0.39V
TM
Top View
8
1
2
3
45
6
7
A
A
S
G
D
D
K
K
lCo-packaged HEXFET® Power
MOSFET and Schottky Diode
lIdeal for Mobile Phone Applications
lGeneration V Technology
lSO-8 Footprint
Notes through are on page 8
SO-8
Absolute Maximum Ra tings
Parameter Units
VDS Dr ain-t o-Source Vo ltage V
VGS Gat e- to-S ource Voltag e
ID @ TA = 25°C Co ntin uo us D r ai n C ur rent , V GS @ 10V
ID @ TA = 70°C Co ntin uo us D r ai n C ur rent , V GS @ 10V A
IDM
Pulsed Dr ain Cur rent
c
PD @TA = 25°C
Power Dissipati on
f
W
PD @TA = 70°C
Power Dissipati on
f
dV/dt Peak Diode Recovery
d
V/ns
Linear D erati ng Factor mW/°C
TJ Operating Jun ction and °C
TSTG Stor ag e Tempe r ature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junc ti on-to-Drain Lead
g
––– 20 °C/W
RθJA Junction-to-Ambient
fg
––– 62.5
Max.
-2.2
-1.8
-22
± 12
-20
-55 to + 150
2.0
16
1.3
-0.74
PD- 91789B
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MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drai n- to- Sou r c e B reakdow n Volta ge -20 ––– ––– V
RDS(on) Stati c D rain- to- Sour c e O n- Resistance ––– 0. 15 5 0. 27 0 Ω
––– 0.260 0.400
VGS(th) G at e Thr es hold V o ltage - 0.70 ––– ––– V
IDSS Dr ai n- to- Sour c e Leak age Cu r rent ––– ––– -1.0 µA
––– ––– -25
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate- to- Sour c e R ev e r s e Leaka ge –– – ––– -1 00
gfs For ward Transconductance 2.4 ––– ––– S
QgTot a l G ate C ha r ge ––– 5 .2 7. 8
Qgs Gate-to-Source Charge ––– 0.88 ––– nC
Qgd Gate-to-Drain Charge ––– 2.5 –––
td(on) Turn-On Delay Time ––– 10 –––
trRise Time –––12–––
td(off) Turn-Off Del ay Time ––– 1 1 ––– ns
tfFall Time ––– 7.6 –––
Ciss Input Capacita nce ––– 26 0 –– –
Coss Output Capacitance ––– 140 ––– pF
Crss Reverse Transfer Capacitance ––– 70 –––
MOSFET Source-Drain Ratings and Char ac terist i cs
Parameter Min. Typ. Max. Units
ISContin uous So ur ce Cur rent ––– ––– -2 .2
ISM Pulsed Source Current ––– ––– -22
V
SD
Diode Forward Voltage
–––
–––
-1.2
V
t
rr Reverse Recovery Time ––– 26 39 ns
Qrr Reverse Recovery Charge ––– 24 36 nC
Schottky Diode Maximum Ratings
Parameter Max. Units
IF(av) Max. Average Forward current 1.7 50% Duty Cycle Rectangular Wave, TA = 25°C
1.2 A TA = 70°C
ISM Max.Peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. Pulse Following any rated
Sur ge Current 11 10ms sine or 6ms Rect. Pulse load condition
&
with VRRM applie
d
Schottky Diode Electrical Specifications
Parameter Max. Units
VFM Max . Forw a r d Voltag e Dr op 0. 5 0 V
0.62
0.39
0.57
IRM Ma x. R everse Leakage Cur rent 0.05 mA TJ = 25 °C
10 TJ = 12 5°C
Ct Max. Junction Ca pacitan ce 92 pF
dV/dt Max. Voltage Rate of Charge 3600 V/µs Rated VR
VGS = 12 V
ID = -2.2A
TJ = 25°C, IF = -2.2A, VDD = -10 V
di/dt = 100A /µs
e
TJ = 25°C, IS = -2.2A, VGS = 0V
e
VGS = -4.5V
RG = 6.0Ω
VDS = -16V, ID = -2.2A
VDD = -16V
Conditions
VGS = 0V, I D = -250µA
VGS = -4.5V, ID = -1.2A
e
VGS = -12V
VGS = -2.7V, ID = -0.6A
e
VDS = VGS, ID = -250µA
VDS = -16V, VGS = 0V, TJ = 12 5°C
VDS = -16V, VGS = 0V
Conditions
ƒ = 1.0MHz
VGS = 0V
VDS = -15V
VDD = -10V, VGS = -4.5V
e
ID = -2.2A
Conditions
RD = 4.5Ω
VR = 5Vdc (100kHz to 1MHz) 25°C
Conditions
IF = 1.0A, T J = 25 °C
IF = 2.0A, T J = 25 °C
IF = 1.0A, T J = 12 5°C
VR = 20 V
IF = 2.0A, T J = 12 5°C
IRF7324D1
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Power Mosfet Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1 110
-VDS, Dr ain-to-Source Voltage ( V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 150°C
-1.5V
VGS
TOP -7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
BOTTOM -1.5V
1.0 2.0 3.0 4.0 5.0 6.0 7.0
-VGS, Gate-to-Source Voltage ( V)
0.1
1.0
10.0
100.0
-ID, Drain-to-Source Current
(Α)
VDS = -10V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 150°C
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD, Source-t o-Drain Voltage (V)
0.1
1.0
10.0
100.0
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1 110
-VDS, Dr ain-to-Source Voltage ( V)
0.01
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
≤ 60µs PULSE WID TH
Tj = 25°C
-1.5V
VGS
TOP -7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
BOTTOM -1.5V
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Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical On-Resistance Vs.
Drain Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-ID , Drain C urrent (A)
0.140
0.144
0.148
0.152
0.156
0.160
0.164
RDS ( on) , Drain-to-Source On Resistance (
Ω)
VGS= - 4.5V
VGS= - 5.0V
2.0 4.0 6.0 8.0 10.0
-VGS, Gate-to-Source Voltage ( V)
0.0
0.1
0.2
0.3
0.4
RDS(on), Drain-to -Source On Resistance (
Ω)
ID = -2.2A
TJ = 25°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Juncti on Temperature ( °C)
0.5
1.0
1.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -2.2A
VGS = -4.5V
1 10 100
-VDS , Dr ain-toSource Voltage (V)
1
10
100
-ID, Drain-to-Source Current (A)
Tc = 25° C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED B Y RDS(on)
100µsec
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Power Mosfet Characteristics
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
110 100
-VDS, D rain- to-S ource Voltage ( V)
0
100
200
300
400
500
600
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V , f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
024681012
QG Total Gate Char ge (nC)
0
2
4
6
8
10
12
-VGS, Gate-to-Source Voltage (V)
VDS= -16V
VDS= -10V
ID= -2.2A
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Du ty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ectangul ar Pulse D ur ation (se c)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7324D1
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Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Reverse Current - IR (mA)
Fig. 12 -Typical Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 4 8 12 16 20
R
)
J
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1
.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Fig.14 - Typical Junction capacitance
Vs.Reverse Voltage
Forward Votage Drop - VFM (V)
IRF7324D1
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e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BA SIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BA SIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDE C OU TLINE MS-012AA.
NOTES:
1. DIM ENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2 . CON TROLLIN G D IMENSION : MILLIMETER
3. DIMENSIONS ARE SHOWN IN MI L LIMETERS [INCH ES].
5 DIM ENSION DOES NOT INCLUDE MO LD PROTRUSIO NS.
6 DIM ENSION DOES NOT INCLUDE MO LD PROTRUSIO NS.
M OLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UBS T RAT E .
M OLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.07
0]
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
RECTIFIER
LOGO
INTERNATIONAL
EX AMP LE: THIS IS AN IRF7 8 07D1 (FETKY)
XXXX
807D1
Y = L AST DIGIT OF THE YE AR
A = ASSE MBLY SI TE CODE
WW = WEEK
LOT CODE
PRODUCT ( OPTION AL)
P = DISGN ATES LEAD - FREE
DA TE CODE (YW W )
PART N UMBER
SO-8 (Fetky) Part Marking Information
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
ISD ≤ -2.2A, di/dt ≤ -96A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, steady-state
Rθ is measured at TJ of approximately 90°C.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTE S :
1. CONTR OLLI NG DIM EN SI ON : MI LL IMETER.
2. OU TLINE CONFO RMS TO EIA-481 & EIA-541.
F EED DIRECT I O N
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTR OLLI NG DIMENS I ON : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
