VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Feb-14 1Document Number: 94353
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Three Phase Controlled Bridge (Power Modules),
55 A to 110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IO 55 A to 110 A
VRRM 800 V to 1600 V
Package MT-K
Circuit Three phase bridge
MT-K
MT-
K
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES
5.MT...K
VALUES
9.MT...K
VALUES
11.MT...K UNITS
IO
55 90 110 A
TC85 85 85 °C
IFSM
50 Hz 390 950 1130 A
60 Hz 410 1000 1180
I2t50 Hz 770 4525 6380 A2s
60 Hz 700 4130 5830
I2t 7700 45 250 63 800 A2s
VRRM Range 800 to 1600 V
TStg Range -40 to 125 °C
TJRange -40 to 125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM/IDRM,
MAXIMUM
AT TJ = 125 °C
mA
VS-5.MT...K
80 800 900 800
10
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
VS-9.MT...K
VS-11.MT...K
80 800 900 800
20
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
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Revision: 27-Feb-14 2Document Number: 94353
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Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES
5.MT...K
VALUES
9.MT...K
VALUES
11.MT...K UNITS
Maximum DC output current at
case temperature IO120° rect. conduction angle 55 90 110 A
85 85 85 °C
Maximum peak, one-cycle
forward, non-repetitive on state
surge current
ITSM
t = 10 ms No voltage
reapplied
Initial TJ = TJ max.
390 950 1130
A
t = 8.3 ms 410 1000 1180
t = 10 ms 100 % VRRM
reapplied
330 800 950
t = 8.3 ms 345 840 1000
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
770 4525 6380
A2s
t = 8.3 ms 700 4130 5830
t = 10 ms 100 % VRRM
reapplied
540 3200 4510
t = 8.3 ms 500 2920 4120
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 A2s
Low level value of threshold
voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 1.17 1.09 1.04
V
High level value of threshold
voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.45 1.27 1.27
Low level value on-state slope
resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 12.40 4.10 3.93
m
High level value on-state slope
resistance rt2 (I > x IT(AV)), TJ maximum 11.04 3.59 3.37
Maximum on-state voltage drop VTM Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction 2.68 1.65 1.57 V
Maximum non-repetitve
rate of rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs
Maximum holding current IHTJ = 25 °C, anode supply = 6 V, resistive load,
gate open circuit 200 mA
Maximum latching current ILTJ = 25 °C, anode supply = 6 V, resistive load 400
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS 5.MT...K 9.MT...K 11.MT...K UNITS
RMS isolation voltage VISOL TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s 4000 V
Maximum critical rate of rise of
off-state voltage dV/dt (1) TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit 500 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS 5.MT...K 9.MT...K 11.MT...K UNITS
Maximum peak gate power PGM
TJ = TJ maximum
10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative
gate voltage - VGT 10
V
Maximum required DC gate
voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V,
resistive load
4.0
TJ = 25 °C 2.5
TJ = 125 °C 1.7
Maximum required DC gate
current to trigger IGT
TJ = - 40 °C 270
mATJ = 25 °C 150
TJ = 125 °C 80
Maximum gate voltage
that will not trigger VGD
TJ = TJ maximum, rated VDRM applied
0.25 V
Maximum gate current
that will not trigger IGD 6mA
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Feb-14 3Document Number: 94353
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 5.MT...K 9.MT...K 11.MT...K UNITS
Maximum junction operating
and storage temperature range TJ, TStg - 40 to 125 °C
Maximum thermal resistance,
junction to case RthJC
DC operation per module 0.18 0.14 0.12
K/W
DC operation per junction 1.07 0.86 0.70
120 °C rect. conduction angle per module 0.19 0.15 0.12
120 °C rect. conduction angle per junction 1.17 0.91 0.74
Maximum thermal resistance,
case to heatsink per module RthCS Mounting surface smooth, flat and grased 0.03
Mounting
torque ± 10 %
to heatsink A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6 Nm
to terminal 3 to 4
Approximate weight 225 g
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
RECTANGULAR CONDUCTION
AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
5.MT...K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236
K/W9.MT...K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100
11.MT...K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
Maximum Allowable
Case Temperature (°C)
Total Output Current (A)
10 20 30 40 50 60
0
120°
(Rect.)
5.MT..K Series
100
120
130
80
94353_01
90
110
~
+
-
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
21 34567
0
94353_02
TJ = 25 °C
5.MT..K Series
Per junction
TJ = 125 °C
100
1000
1
10
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
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Revision: 27-Feb-14 4Document Number: 94353
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Current Ratings Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Total Power Loss (W)
Total Output Current (A)
51510 25 353020 40 5045 55
0
94353_03a
80
60
180
220
0
20
140
100
120
200
40
160
120°
(Rect.)
5.MT..K Series
TJ = 125 °C
Maximum Total Power Loss (W)
Maximum Allowable Ambient
Temperature (°C)
25 50 75 100 125
0
R
thSA
= 0.05 K/W - ΔR
0.12 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.7 K/W
1.0 K/W
1.5 K/W
80
60
180
220
0
20
140
100
120
200
40
160
94353_03b
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 100
1
94353_04
5.MT..K Series
Per junction
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
350
150
250
200
300
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 1
0.01
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
5.MT..K Series
Per junction
400
350
150
94353_05
250
200
300
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Maximum Allowable Case
Temperature (°C)
Total Output Current (A)
20 40 60 80 1000
120°
(Rect.)
9.MT..K Series
100
120
130
80
94353_06
90
110
~
+
-
Instantaneous On-State Current (A)
Total Output Current
1.0 2.01.50.5 2.5 3.0 3.5 4.0
TJ = 25 °C
TJ = 125 °C
94353_07
100
1000
1
10
9.MT..K Series
Per junction
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
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Revision: 27-Feb-14 5Document Number: 94353
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 11 - Current Ratings Characteristic
Fig. 12 - Forward Voltage Drop Characteristics
Maximum Total Power Loss (W)
Total Output Current (A)
10 20 30 40 50 7060 9080
0
94353_08a
200
150
300
0
50
250
100
120°
(Rect.)
9.MT..K Series
TJ = 125 °C
Maximum Total Power Loss (W)
Maximum Allowable Ambient
Temperature (°C)
25 50 75 100 125
0
R
thSA
= 0.05 K/W - ΔR
0.12 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.7 K/W
1.0 K/W
1.5 K/W
200
150
300
0
50
250
100
94353_08b
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 100
1
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
94353_09
9.MT..K Series
Per junction
850
400
650
450
750
700
550
500
600
800
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 1
0.01
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
9.MT..K Series
Per junction
1000
800
300
94353_10
500
400
600
900
700
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
Maximum Allowable Case
Temperature (°C)
Total Output Current (A)
20 40 60 80 100 120
0
120°
(Rect.)
11.MT..K Series
100
120
130
80
94353_11
90
110
~
+
-
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
1.0 1.50.5 2.0 2.5 3.0 3.5 4.0
94353_12
100
1000
1
10
TJ = 25 °C
TJ = 125 °C
11.MT..K Series
Per junction
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
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Revision: 27-Feb-14 6Document Number: 94353
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Total Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 16 - Thermal Impedance ZthJC Characteristics
Maximum Total Power Loss (W)
Total Output Current
2010 4030 6050 8070 10090 110
0
94353_13a
200
150
350
0
50
250
300
100
120°
(Rect.)
11.MT..K Series
TJ = 125 °C
Maximum Total Power Loss (W)
Maximum Allowable Ambient
Temperature (°C)
25 50 75 100 125
0
R
thSA
= 0.058 K/W - ΔR
0.12 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.7 K/W
1.0 K/W
1.5 K/W
200
150
350
0
50
250
300
100
94353_13b
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
At any rated load condition and with
rated VRRM applied following surge.
94353_14
11.MT..K Series
Per junction
1000
400
700
500
800
600
900 Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.01 0.1 1.0
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
11.MT..K Series
Per junction
1200
1000
400
94353_15
600
500
800
1100
700
900
0.001
0.01
0.1
1
10
0.001
94353_16
0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (K/W)
10
Per junction
5.MT..K Series
11.MT..K Series
9.MT..K Series
Steady state value
RthJC = 1.07 K/W
RthJC = 0.86 K/W
RthJC = 0.70 K/W
(DC operation)
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
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Revision: 27-Feb-14 7Document Number: 94353
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Fig. 17 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
0.01
94353_17
0.1
1
10
0.001 0.01 0.1 1
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
1000 100 10
(b)
(a)
(4) (3) (2) (1)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
VGD
IGDFrequency Limited by PG(AV)
5.MT...K, 9.MT...K, 11.MT...K Series
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω;
t
r = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
t
r = 1 μs, tp ≥ 6 μs
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Full-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
A
D
1
B
EF
C
25
64 3
Positive half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
AB C
DEF
125
Negative half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
64 3
A
DE F
BC
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95004
Document Number: 95004 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 27-Aug-07 1
MTK (with and without optional barrier)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
24 ± 0.5
(0.94 ± 0.02)
38 ± 0.5
(1.5 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
35 ± 0.3
(1.38 ± 0.01)
8.5 ± 0.5
(0.34 ± 0.02)
Fast-on tab 2.8 x 0.8 (type 110)
Screws M5 x 0.8 length 10
28 ± 1
(1.11 ± 0.04)
25.5 ± 0.5
(1.004 ± 0.02)
5 ± 0.3
(0.2 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
18 ± 0.3
(0.71 ± 0.01)
12
34
56
78
ABC
F
E
D
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95004
2Revision: 27-Aug-07
Outline Dimensions
Vishay Semiconductors MTK (with and without optional barrier)
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
24 ± 0.5
(0.94 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
35 ± 0.3
(1.38 ± 0.01)
8.5 ± 0.5
(0.34 ± 0.02)
Fast-on tab 2.8 x 0.8 (type 110)
Screws M5 x 0.8 length 10
28 ± 1
(1.11 ± 0.04)
25.5 ± 0.5
(1.004 ± 0.02)
5 ± 0.3
(0.2 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
18 ± 0.3
(0.71 ± 0.01)
12
34
56
78
ABC
F
E
D
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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