©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP140T/141T/142T
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP140T
: TIP141T
: TIP142T
60
80
100
V
V
V
VCEO
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
60
80
100
V
V
V
VEBO Emitter-Bas e Voltage 5 V
IC Collector Current (DC) 10 A
ICP Collector Current (Pulse) 15 A
IB Base Current (DC) 0.5 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
IC = 30mA , IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current : TIP140T
: TIP141T
: TIP142T
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
2
2
2
mA
mA
mA
ICBO Collector Cut-off Current : TIP140T
: TIP141T
: TIP142T
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
1
1
1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 5A
VCE =4V, IC = 10A 1000
500 mA
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA
IC = 10A, IB = 40mA 2
3V
V
VBE(sat) Base-Em itter Satur ation Voltage IC = 10A, IB = 40mA 3.5 V
VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 10A 3 V
tD Delay Time VCC = 30V, IC = 5A
IB1 = 20mA
IB2 = -20mA
RL = 6Ω
0.15 µs
tR Rise Time 0.55 µs
tSTG St orage Time 2.5 µs
tF Fa ll Time 2.5 µs
TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
Equivalent Circuit
B
E
C
R1 R2
R
18
k
Ω≅
R
20.12
k
Ω≅
1.Base 2.Collector 3.Emitter
1TO-220
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP140T/141T/142T
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6.
012345
0
1
2
3
4
5
6
7
8
9
10 IB = 2000uA
IB = 1800uA
IB = 1600uA
IB = 1400uA
I
B
= 1200uA
I
B
= 1000uA
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100
10
100
1k
10k
100k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10 IC=500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], C APACITANCE
1 10 100 1000
0.1
1
10
100
TIP141
TIP142
TIP140
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP140T/141T/142T
Dimensions in Millimeters
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Statu s Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
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Features
Monolithic Construction with Built In Base-
Emitter Shunt Resistors
● High DC Current Gain: hFE=1000 @
VCE=4V, IC=5A (Min.)
● Industrial Use
● Complement to TIP145T/146T/147T
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Product Product status Pricing* Package type Leads Packing method
TIP141T Full Production $0.66 TO-220 3 BULK
TIP141TTU Full Production $0.66 TO-220 3 RAIL
* 1,000 piece Budgetary Pricing
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Models
Package & leads Condition Temperature range Software version Revision date
PSPICE
TO-220-3 Electrical/Thermal -25°C to 100°C 9.2 Feb 28, 2001
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Features
Monolithic Construction with Built In Base-
Emitter Shunt Resistors
● High DC Current Gain: hFE=1000 @
VCE=4V, IC=5A (Min.)
● Industrial Use
● Complement to TIP145T/146T/147T
back to top
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datasheet
PDF
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[E-
mail]
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Product status/pricing/packaging
Product Product status Pricing* Package type Leads Packing method
TIP142TTU Full Production $0.66 TO-220 3 RAIL
TIP142T Full Production $0.66 TO-220 3 BULK
* 1,000 piece Budgetary Pricing
back to top
Models
Package & leads Condition Temperature range Software version Revision date
PSPICE
TO-220-3 Electrical/Thermal -25°C to 100°C 9.2 Feb 28, 2001
back to top
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Dotted line
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Contents
Features | Product status/pricing/packaging |
Models
Features
Monolithic Construction with Built In Base-
Emitter Shunt Resistors
● High DC Current Gain: hFE=1000 @
VCE=4V, IC=5A (Min.)
● Industrial Use
● Complement to TIP145T/146T/147T
back to top
space
Datasheet
Download this
datasheet
PDF
e-mail this datasheet
[E-
mail]
This pagePrint version
Product status/pricing/packaging
Product Product status Pricing* Package type Leads Packing method
TIP140T Full Production $0.66 TO-220 3 BULK
TIP140TTU Full Production $0.66 TO-220 3 RAIL
* 1,000 piece Budgetary Pricing
back to top
Models
Package & leads Condition Temperature range Software version Revision date
PSPICE
TO-220-3 Electrical/Thermal -25°C to 100°C 9.2 Feb 28, 2001
back to top
file:///C|/PDF/TIP140T.html (1 of 2) [29-Jul-02 9:18:46 AM]
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