- Numerical Index 2N3962-2N4059 | > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS i= = aw = = z | =| REPLACE- | PAGE Py 1 Slt | Vee [Vel he @Ic Vorsan @ Io B) |= TRE (S| ment | numper| USE & 5 g alm (Bl ~2lB =)a @25C | S|} C | (volts) | (volts) 3 (min) (max) >] (velts) = 3 = 2 2N3962 S|P AFA 0,36W) Al 200 60 60} O} 100) 300 0.25 10M] 100 E 4oM) T 2 2 Ss |P AFA 0.36W] Aj 200 8&0 80) O; 100) 3900 0.25 LOM} 100 E 40M] T S]|P AFA 0.36W] Al 200 45 45) O} 250/ 500] 0.25 LOM} 250 E 50M] T S|P AFA 0.36W) Al 200 60 60] O} 250) 500 0.25 LOM} 250 E 50M 2N3966 thru Field Effect Transistors, sce Table on Page 1-166 2N3972 3973 S |N | 2N4400 5-34 MSG 0.36W| Al 150 60 30| 0 35! LOO! LOM 0.3! O.15A 200M! T S |N | 2N4401 5-34 MSC 0.36W) Al 150 60 30} 0 55) 200 LOM 0.3) O.15A 200M] T S |N } 2N4400 5-34 MSC O0.36W) A] 150 60 30) 0 35) 100. 10M 0.3] O.15A 200M! T S |N | 2N4401 5-34 MSC 0.36W) A] 150 60 30] 0 55] 200) 1OM 0.3) 0.154 200M] T S|P CHP O.4W] Al 200 15 10} Oo] 40 5.0M 0.1 5.0M 1.OM}) T S |[P CHP 0.4W; Al 200 25 20) 0 30 5.0M 0.15 5.0M 1.0M) T S }P CHP 0.4W] A] 200 40 35] 0 20 5.0M 0.15 5. 0M 1.0M| T Unijunction Transistor, see Table on Page 1-174 SIN HSS O.8WE Aj 200 60 30] 0 30) 120] 0O.15A 0.4) O.15A 250M| T SEN HSS 0,8W} AF 200 50 201 0 40] 140] 0.154 0.4) O.LSA 250M| T S |N RFC 0.2W) A} 150 30 12] 0 30 4.0M 500M] T 5S pN RFG 0.2W) A} 150 30 12) 0 20 4.0M 400M] T SIN RFG O.2W] A} 150 30 12}, 0 20 4.0M 300M] T Thyristors, sce Table on Page 1-154 Field Effect Transistor, see Table on Page 1-166 G |P |2N2929 9-33 RFA 0.3W{ A| 100 20 12] 0 40] 200 2.0M 150 E 0.66] T Ss |N PHS 2.0W] A) 200 100 80) 0 40] 120 1.0A 0.25 1.0A 40M| T Ss |N PHS 2,0W} A} 200) 100 80} O} 80} 240] 1.OA] 0.25 1.0A 40M! T S [N PHS 2,0W] A} 200 100 80] 0 40} 120 1.0A 0.25 1.0A 40M] T S |N PHS 2.0W} A} 200) 100 80] O} 80} 240 1.0A] 0.25 1.0A 40M] T SIN PHS 1.0W) A] 200 100 80] 30] 120 O.5A 0.3 O.5A 40M! Tt S |N PHS 1.QW) A} 200 126 100} oO 40] 120 0.54 0.3 O.5A 40M} T S |N LPA 4.0W] A 100 80) 0 20 80 15A 30 E 30M] B S |N LPA 4.0W] A 120 1001 0 20 80 15A 30 E 30M] B S |N LPA L.2W] A 100 80; 0 30) 150 104 30M] B 2N4005 S [N LPA 1,2Wl A 120 100] 0 30[ 150 10A 30M| B 2N4006 Ss |P AFA 400M} A| 200 LO 6.0] 0 40 E 20M| T 2N4007 S |e MSA 400Mf A] 200 20 15] 0 30 E 15M] T 2N4008 Ss |P MSA 400M} A] 200 35 30] 0 20 E 15M] T 2N4009 Matched Pair 2N4006 2N4010 Matched Pair 2N4&007 ON4011 Matched Pair 2N4008 2N4012 S IN 9-110 LPA 11.6W] Cj 200 65 40| O| 4.0 40 L.OA 1.0} 0.25A 400M] T 2N4013 SIN 8-257 HSS 360M] Al 200 60 40] 0 150 LOOM 300M] T 2N4014 S iN 8-257 HSS 360M| A; 200 80 50; 0 150 100M 300M] T 2R4015 S )P DFA 0.4W) Ay 200 60 60) 0) 135] 350 1.0M 0.25 SOM} 135 gE 200M} T 2N4016 Ss )P DFA 0.4W| A] 200 60 60] O|] 135} 350 1.0M 0.25 50M} 135 E 200M| T 2N4017 S |P AFA 600M} A] 200 80 80] O] 100] 500 1.0M 40M] T 2N4018 SEP AFA 400M} A] 200 60 60] 0 100 E 7,0M! E 2N4019 S ;P AFA 400M} A] 200 45 45t 0 250 E 5OM| T 2N4020 S }P DFA 0.4W) Al 200 45 45} O] 250} 500 1O* 0.25 10M] 250 E 50M] T 2N4021 S |P DFA O.4W] Ay 200 60 60] O}] 100) 350 10* 0.25 10M| 100 E 40M! T 2N4022 S |P DFA O.4W] Al 200 60 60] O}] 250) 500 1L0* 0.25 LOM] 250 E 50M| T 2N4023 S |P DFA O.4W] A} 200 45 45| O| 250} 500 1o* 0.25 LOM} 250 E 50M) T 2N4024 S |P DFA O.4W/ Al 200 60 6Q| QO} 100) 350 Lox 0.25 1oM} 100 E 40M! T 2N4025 S ]P DFA O.4W}] AJ] 200 60 60} O; 250} 500 Lo* 0.25 LOM] 250 E 50M] T 2N4026 S |P AFA O.5W] A} 200 60 60] 0 40| 120 O.1A 1.0 1.0A LOOM] T 2N4027 S |P AFA O.5Wy A] 200 80 801 0 40| 120 O.1A 0.5 0.54 100M} T 2N4028 S |P AFA O.5Wt Ay 200 60 60; O}] 100; 300 O.1A 1.0 1.0A ISOM] T 2N4029 S |P AFA O.5W| A} 200 80 8Of O} 100; 300 Q.1A 0.5 0.54 150M] T 2N4030 S |P AFA 0.8W] A] 200 60 60} O 40| 120 O.1A 1.0 1.0A LOOM] T 2N4031 S |P AFA 0.8W] A] 200 80 80| 0 40] 120 O.1A 0.5 O.5A LOOM] T 2N4032 S |P AFA 0.8W] Al} 200 60 60} Of 100) 300 O.1A 1.0 1.0A 150M] T 2N4033 S |P AFA 0.8W| Al 200 80 80| oO} 100| 300 O.1A 0.5 O.5A 150M] T 2N4034 S ]P HSS 0.36W)] Al 200 40 40| 0 70; 200 10M 0.13 1.OM 50 E 400M| T 2N4035 S [P HSS 0.36W{ A| 200 40 40] O| 150] 300 10M 0.13 1.0M] 150 E 450M| T 2N4.036 Ss |P MSS 5.OW} A] 200 90 65; 0 40{ 140] 0.154 ooM; T 2N4037 S IP MSS L.OW] Af 200 60 401 0 50; 250] O,15A 60M| T 2N4040 S [N HPA L7.5W] C] 200 60 40| 0 10 80 O.1A 2.0 1,0A 400M] T 2N4041 S IN HPA 10w] C]} 200 60 40; 0 10 80 75M 2.0 O.5A 400M] T 2N4042 S |N DFA 0.3W] C} 200 60 60] Of 200] 600 Lo* 0.35 1.OM 200M] T 2N4043 S |N DFA O.3Wy; C] 200 45 45] 0 80] 800 1O* 0.35 1.0M LSOM; T 2N4044 SIN DFA O.4W] Cj} 200 60 60] O] 200] 600 1o* 0.35 1.0M 200M; T 2N4045 S |N DFA O.4W) C) 200 45 454 0 80} 800 Lo* 0.35 1,.0M 150M) T 2N4046 Ss |N 8-296 HSS 800M] A} 200 50 30) 0 150 100M 250M] T 2N4047 S |N 8-296 HSS 800M} A] 200 80 50] a 150 100M 250M} T 2N4048 G |P 7-152 LPA 170W| Ci 110 45 30] 0 60] 120 1L5A 0.30 604 2.0K] E 2N4049 G |P 7-152 LPA 170W| Cc} 110 60 45| 0 60] 120 LA 0.30 60A 2.0K] E 2N4050 GP 7-152 LPA 170W] C} 110 75 60] 0 60] 120 15A 0,30 60A 2.0K] E 2N4051 GIP 7-152 LPA 170W;/ C} 110 45 30] 0 60; 180 15A 0.36 60A 2.0K] E 2N4052 G ftP 7-152 LPA 170w}] Cc} 110 60 454 0 60{ 180 15A 0.30 60A 2.0K] E 2N4053 G |P 7-152 LPA L7OW] C} 110 75 60}; 0 60| 180 15A 0.30 60A 2.0K] E 2N4054 Ss |N LPA 6.25W}] C}] 150 300 300] 0 30 90 50M 5.0 75M 15M} T 284055 SN LPA 6,25W} C} 150 250 250] 0 30 90 50M 5.0 75M 15M| T 2N4056 S |N LPA 6.25W] C] 150 200 200] 0 30 90 50M 5.0 75M 15M| T 2N4057 Ss |N LPA 6.25W] C} 150 150 150] 0 30 90 5.0 75M 15M] T 2N4058 S }P |MPS6522 [5-1 AFC Q.25W; AJ 150 30 30] O} 100] 400 O.1M 0.7 10M} 100 E 2N4059 S }P |Mps6516 |5-113 AFC O.25W] Al 150 30 30f oO 45, 660 1.0M 0.7 10M 45 E 1-145KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors 2N37 24 (SILICON) Vceo = 30 to 50V Ic =I1A on3/25 f; = 300 MHz 2N4013 2N4014 NPN silicon annular low-power transistors primarily de- signed for high-speed saturated switching applications. MAXIMUM RATINGS Rating Symbol | 2Navsa | anavee | Unit Collector-Emitter Voltage Voro 30 50 Vde Collector-Base Voltage Voz 50 30 Vde Emitter~Base Voltage Vez 6.0 Vde Collector Current Io 1.0 Adc Total Device Dissipation @ Ty = 25C Pp 800 360 mW CASE 31 CASE 22 Derate above 25C 4.6 | 2.06| mw/c (TO-5) > Total Device Dissipation @ T,, = 25C Py 3.5 1.2 Watts 2N3724 N4013 4 2N3725 2N4014 Derate above 25C : 20 6.85 mw/C Operating and Storage Junction Ty Tet -65 to +200 C Temperature Range & ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) | Characteristic | Symbol | Min | Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* BVogo* Vdc Mp = 10 mAdc, Ip = 0) 2N3724, 2N4013 30 - 2N3725, 2N4014 50 - Collector-Emitter Breakdown Voltage BYors Vdc Me = 10 pAdc, Vor? 0) 2N3724, 2N4013 50 - 2N3725, 2N4014 80 - Collector-Base Breakdown Voltage BVoRo Vdc Te = 10 pAdc, Ie = 0) 2N3724, 2N4013 50 - 2N3725, 2N4014 80 - Emitter-Base Breakdown Voltage BVEBO Vde (lp = 10 pAde, Iq = 0) 6.0 - Collector Cutoff-Current lors pAdc Wor = 50 Vdc, Vor = 0) 2N3724, 2N4013 - 10 Vor = 80 Vde, Vor = 0} 2N3725, 2N4014 - 10 Collector Cutoff Current logo pAdc Voz = 40 Vde, I, = 0) 2N3724, 2N4013 - 1.7 (V4 = 40 Vdc, 1, =0, T, = 100C) 2N3724, 2N4013 - 120 CB E A ? Vop = 60 Vdc, Ib = 0) 2N3725, 2N4014 - 1.7 Vop = 60 Vdc, I, = 0, Ty = 100C) 2N3725, 2N4014 - 120 Base Current In pAdc Vor = 50 Vdc, Vor = 0) 2N3724, 2N4013 - 10 (V.., = 80 Vde, Vaz, = 0) 2N3725, 2N4014 ~ 10 CE BE ON CHARACTERISTICS DC Current Gain* hep - fe = 10 mAdc, Vor = 1.0 Vdc) 30 - Mg = 100 mAdc, Vor = 1.0 Vdc) 60 150 Ug = 300 mAdc, Vor = 1.0 Vdc) 40 - && = 500 mAdc, Vor = 1.0 Vdc) 35 - Mp = 800 mAdc, Vor = 2.0 Vdc) 2N3724, 2N4013 25 - 2N3725, 2N4014 20 - Mg = 1.0 Adc, Vor = 5.0 Vdc) 2N3724, 2N4013 30 - 2N3725, 2N4014 25 - ({, = 100 mAde, VQ, = 1.0 Vde, Ty = -55C) 2N3724, 2N4013 30 - lg = 500 mAdc, Vor = 1,0 Vdc, Ty = -55C) 20 - 8-257Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz a, = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 300 - Output Capacitance Cob pF (Vop = 10 Vdc, Ip = 0, f = 140 kHz) 2N3724, 2N4013 - 12 2N3725, 2N4014 - 10 Input Capacitance Ciy pF (Var = 0.5 Vdc, Ine 0, f = 140 kHz) - 55 SWITCHING CHARACTERISTICS Turn-On Time ton - 35 ns (Vaan = 30 Vde, Vip = 3,8 Vdc 5 cc > "BE (aff) ; _ Delay Time Ig = 500 mAde, I; = 50 mAdc) a *0 ns Rise Time (See Figure 1) t. - 30 ns Turn-Off Time tote - 60 ns (Vog = 30 Vde, I, = 500 mAdc, Storage Time ~ . t - 50 ns 31 =lp2 = 50 mAdc) s Fall Time (See Figure 1) 2N3724, 2N4013 te - 25 ns 2N3725, 2N4014 - 30 * Pulse Test: Pulse Width = 300 us, Duty Cycle = 1.0%. FIGURE 1 SWITCHING TIMES TEST CIRCUIT +30Vv < > 15 -3.8V > 1.0 PF ( (o TO SAMPLING OSCILLOSCOPE 1.0k e 4 7 | Zin & 100 k22 TL t< 1.0 ns Vin = 19-7 1.0 BF 100 PULSE GENERATOR . t,. tp < 1.0ns 62 PW. ~ 1.0 ps Zin = 80.Q + == D.C. < 2.0% - ~ 8-258