MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-HB * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 53.5 430.2 8 8 C R6 36.5 14 E C 5.3 3-M4 33 3.5 LABEL 4.5 22 7 3.5 24MAX. 18 5.3 B E B Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A -IC Collector reverse current DC (forward diode current) 250 A PC Collector dissipation TC=25C 1.8 W IB Base current DC 30 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 300 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M4 -- Mounting torque Mounting screw M5 B(E) terminal screw M4 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N*m 10~15 kg*cm 1.47~1.96 N*m 15~20 kg*cm 0.98~1.47 N*m 10~15 kg*cm 90 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V, Collector open -- -- 80 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.0 V -VCEO Collector-emitter reverse voltage IC=-30A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=30A, VCE=2.5V 750 -- -- -- -- -- 2.0 s Switching time VCC=300V, IC=30A, IB1=60mA, -IB2=0.6A -- -- 8.0 s -- -- 3.0 s Transistor part -- -- 0.5 C/ W Diode part -- -- 2.0 C/ W Conductive grease applied -- -- 0.15 C/ W IC=30A, IB=40mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 100 IB=200mA DC CURRENT GAIN hFE 80 IB=0.5A 60 40 IB=20mA IB=100mA 20 0 IB=10mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 10 0 VCE=2.5V 7 Tj=25C 5 4 3 2 10 -1 7 5 4 3 2 2.6 3.0 3.4 3.8 BASE-EMITTER VOLTAGE 10 3 7 5 3 2 4.2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) VCE(sat) 10 0 7 5 4 3 IB=40mA 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 VBE (V) COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C 4 3 IC=30A 2 IC=20A IC=10A 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 BASE CURRENT IB (A) ton, ts, tf (s) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VCE=5.0V VCE=2.5V 10 2 7 5 3 2 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 1 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 -2 2.2 10 4 7 5 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 ts tf ton 2 3 4 5 7 10 1 VCC=300V IB1=60mA IB2=-0.6A Tj=25C Tj=125C 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 80 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts tf 10 0 7 5 4 VCC=300V 3 IB1=60mA IC=30A 2 Tj=25C Tj=125C -1 10 10 -1 2 3 4 5 7 10 0 BASE REVERSE CURRENT -IB2 (A) 50 40 20 10 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 0.4 0.3 0.2 0.1 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) VCE (V) SECOND BREAKDOWN AREA 90 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 0.5 Zth (j-c) (C/ W) 100 DERATING FACTOR (%) 500s 100 200 300 400 500 600 700 800 DERATING FACTOR OF F. B. S. O. A. 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) 10 1 7 5 3 2 1ms 0 COLLECTOR-EMITTER VOLTAGE 100s DC IB2=-3.0A 30 FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=-0.6A 60 0 2 3 4 5 7 10 1 Tj=125C 70 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 2 10 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 VCC=300V IB1=60mA IB2=-0.6A 10 1 Irr trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Qrr 10 0 10 0 7 5 3 trr Tj=25C 2 Tj=125C 10 -1 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -12 3 5 7 10 0 TIME (s) Feb.1999