STD150NH02L N-CHANNEL 20V - 0.0025 - 150A - ClipPAK STripFET III MOSFET FOR DC-DC CONVERSION TARGET DATA TYPE STD150NH02L VDSS RDS(on) ID 20V <0.0033 150 A TYPICAL RDS(on) = 0.0025 RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED SURFACE MOUNTING POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 ClipPAK DESCRIPTION The STD150NH02L utilizes the latest advanced design rules of ST's proprietary STripFET technology. This novel 0.6 process utilizes also unique metallization techniques that coupled to a "bondless" assembly technique result in outstanding performance with standard DPAK outline. It is therefore ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SYNCHRONOUS RECTIFICATIONS FOR TELECOM AND COMPUTER OR-ING DIODE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 k) 20 V Gate- source Voltage 20 V ID Drain Current (continuous) at TC = 25C 150 A ID Drain Current (continuous) at TC = 100C 95 A Drain Current (pulsed) 600 A Total Dissipation at TC = 25C 150 W 1 W/C TBD mJ VGS IDM ( ) PTOT Derating Factor EAS (1) Tstg Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature ( ) Pulse width limited by safe operating area (#) Value limited by wire bonding October 2002 -55 to 175 C C (1) Starting Tj = 25C, ID = 150A, VDD = 10V 1/7 STD150NH02L THERMAL DATA 1 C/W Thermal Resistance Junction-ambient Max 100 C/W Maximum Lead Temperature for Soldering Purpose 300 C Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Condition s Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating 1 A V DS = Max Rating, TC = 125 C 10 A Gate-body Leakage Current (VDS = 0) V GS = 20V 100 nA Max. Unit 20 V ON (1) Symbol Parameter Test Condition s Min. Typ. VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250A RDS(on) Static Drain-source On Resistance V GS = 10V, ID = 75 A 0.0025 0.0033 V GS = 5 V, ID = 75 A 0.0034 0.0038 Typ. Max. Unit 1 V DYNAMIC Symbol g fs (1) 2/7 Parameter Test Condition s Min. Forward Transconductance V DS =10V , ID =75A TBD S V DS = 15V, f = 1 MHz, VGS = 0 3830 pF C iss Input Capacitance C oss Output Capacitance 1065 pF Crss Reverse Transfer Capacitance 132 pF STD150NH02L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-SouGate-Drain Charge Gate-Drain Charge Test Condition s Min. V DD = 10V, ID = 75A R G = 4.7 V GS = 4.5V (see test circuit, Figure 3) V DD = 16V, ID = 75A, V GS = 5V Typ. Max. Unit TBD ns TBD ns 32 17 10 43 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Condit ions Min. VDD = 10V, I D = 75A, R G = 4.7, VGS = 4.5V (see test circuit, Figure 3) TBD TBD ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 150 A ISDM (2) Source-drain Current (pulsed) 600 A V SD (1) Forward On Voltage ISD = 150A, VGS = 0 1.3 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 150A, di/dt = 100A/s, V DD = 15V, Tj = 150C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Condition s Min. Typ. TBD TBD TBD ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/7 STD150NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STD150NH02L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 5/7 STD150NH02L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. mm MIN. A TAPE MECHANICAL DATA DIM. A0 B0 B1 mm MIN. 6.8 MAX. MIN. MAX. 7 0.267 0.275 10.4 10.6 12.1 1.6 0.409 0.417 0.476 D 1.5 D1 1.5 E F 1.65 7.4 1.85 7.6 0.065 0.073 0.291 0.299 K0 P0 2.55 3.9 2.75 4.1 0.100 0.108 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 * on sales type 6/7 inch 0.059 0.063 0.059 1.574 16.3 0.618 0.641 B C 1.5 12.8 D 20.2 G 16.4 N T 50 MAX. 330 13.2 inch MIN. MAX. 12.992 0.059 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD150NH02L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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