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TARGET DATA
October 2002
STD150NH02L
N-CHANNEL 20V - 0.0025
Ω
- 150A - ClipPAK
STripFETIII MOSFET FOR DC-DC CONVERSION
(1) Starting Tj=25°C, ID= 150A, VDD = 10V
■TYPICAL RDS(on) = 0.0025Ω
■RDS(ON) *Q
gINDUSTRY’s BENCHMARK
■CONDUCTION LOSSES REDUCED
■SWITCHING LOSSES REDUCED
■SURFACE MOUNTING POWER PACKAGE IN
TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STD150NH02L utilizes the latest advanced de-
sign rules of ST’s proprietary STripFETtechnology.
This novel 0.6µprocessutilizes also unique metalliza-
tion techniques that coupled to a ”bondless” assembly
technique result in outstanding performance with stan-
dard DPAK outline. It is therefore ideal in high perfor-
mance DC-DCconverter applicationswhere efficiency
is to be achieved at very high output currents.
APPLICATIONS
■SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER
■OR-ING DIODE
ABSOLUTE MAXIMUM RATINGS
(●) Pulse width limited by safe operating area
(#) Value limited by wire bonding
TYPE VDSS RDS(on) ID
STD150NH02L 20V <0.0033Ω150 A
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 20 V
VDGR Drain-gate Voltage (RGS =20kΩ)20 V
VGS Gate- source Voltage ±20 V
IDDrain Current (continuous) at TC=25°C150 A
IDDrain Current (continuous) at TC= 100°C95 A
IDM () Drain Current (pulsed) 600 A
PTOT Total Dissipation at TC=25°C150 W
Derating Factor 1 W/°C
EAS (1) Single Pulse Avalanche Energy TBD mJ
Tstg Storage Temperature -55 to 175 °C
TjMax. Operating Junction Temperature °C
ClipPAK
13
INTERNAL SCHEMATIC DIAGRAM
STD150NH02L
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
TlMaximum Lead Temperature for Soldering Purpose 300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID= 250 µA, VGS = 0 20 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) VDS = Max Rating 1µA
VDS = Max Rating, TC= 125 °C10 µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =±20V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS,I
D= 250µA1V
R
DS(on) Static Drain-source On
Resistance VGS =10V,I
D=75A 0.0025 0.0033 Ω
VGS =5V,I
D=75A 0.0034 0.0038 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =10V ,ID=75A TBD S
Ciss Input Capacitance VDS = 15V, f = 1 MHz, VGS =0 3830 pF
Coss Output Capacitance 1065 pF
Crss Reverse Transfer
Capacitance 132 pF
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STD150NH02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD =10V,I
D=75A
R
G= 4.7ΩVGS =4.5V
(see test circuit, Figure 3)
TBD ns
trRise Time TBD ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-SouGate-Drain Charge
Gate-Drain Charge
VDD =16V,I
D= 75A,
VGS =5V 32
17
10
43 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tfTurn-off-Delay Time
Fall Time VDD = 10V, ID=75A,
R
G= 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
TBD
TBD ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 150 A
ISDM (2) Source-drain Current (pulsed) 600 A
VSD (1) Forward On Voltage ISD = 150A, VGS =0 1.3 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 150A, di/dt = 100A/µs,
VDD =15V,T
j= 150°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
nC
A
STD150NH02L
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Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
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STD150NH02L
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0o8o0o0o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
STD150NH02L
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TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*DPAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions
are in millimeters
All dimensions are in millimeters
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STD150NH02L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents orother rights ofthird parties which mayresult from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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