WESTCODE SEMICONDUCTORS Gy) WEST SEMICONDUCTORS 35E D MM 9709955 0002383 7 MEWESBT-2S-Qa CODE @ High Frequency Inverter Grade Capsule Thyristor Type R210C distributed amplified gate for high di/dt and low switching losses 425 amperes average: up to 1400 volts VaawVprm Ratings (Maximum values at 125C Tj unless stated otherwise) Technical Publication TR210C Issue 1 March 1985 RATING CONDITIONS SYMBOL 55C heatsink temperature 425 A Average on-state current Half sine wave (double side cooled) hiavy 85C heatsink temperature 155A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled trinms) 870A Continuous on-state current 25C heatsink temperature, double side cooled bt 690 A Peak one-cycle surge 10ms duration, 60% Vaam re-applied hsm a) 4300 A (non-repetitive) on state current 10ms duration, Vas 10 volts sm (2) 4700 A Maximum permissible surge ener 10ms duration, Va< 10 volts 12t (2) 110500 A2 aximum permissible surge energy 3ms duration, Vas 10 volts it 82000 A? Peak forward gate current Anode positive with respect to cathode leou 11A Peak forward gate voltage Anode positive with respect to cathode Veco 13.5 V Peak reverse gate voltage Vacm 5V Average gate power Po 1.5W Peak gate power 1005. pulse width Pom 60 W Rate of rise of off-state voltage To 80% Vor gate open-circuit dv/dt *200 V/us Rate of rise of on-state current di/dt (1) 500 A/us (repetitive) Gate drive 20 volts, 20 ohms witht, < Tus. Rate of rise of on-state current Anode voltage = 80% Vprm di/dt (2) 1000 A/yus (non-repetitive) Operating temperature range Ths 40+ 125C Storage temperature range Tstg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 1000 A, bry Vim 2.70 V Forward conduction threshold voltage Vo 1.82 V Forward conduction slope resistance r 0.88 mQ Repetitive peak off-state current At Vorm loam 60 mA Repetitive peak reverse current At Varm lanw 60 mA Maximum gate current required to fire all devices let 200 mA Maximum gate voitage required to fire all devices } At 26C, V,=6V, |,=1A { Ver 3V Maximum holding current ly 1A Maximum gate voltage which wiil not trigger any device Veo 0.25 V Stored charge Irn = 550 A, dir/dt 40 A/ps Q,, 55 pC Vam = SOV, 50% chord value Circuit commutated turn-off time Ir = 550 A 200V /us to 80% Von} ta 20-30 us available down to dir/dt=40A/ps, Vay = 50V] 20V/yus to 80% Voam| ta typical 15-25 us Thermal resistance, junction to heat sink, Double side cooled Ry 0.06C/W for a device with a maximum forward volt Single side cooled hi-hs) 0.12C/W drop characteristic VOLTAGE CODE HO2 HO4 HO6 H08 H10 H12 H14 Repetitive peak voltages Varm Vorm Non-repetitive peak off-state voltage Vosm 200 400 600 800 1000 1200 1400 Non-repetitive peak reverse blocking voltage | Vasu | 300 500 700 900 1100 1300 1500 Ordering Information (Please quote device code as explained below 11 digits) R 210 C eee e @ 0 dv/dt code to 80% Vpam Turn-off time Fixed Voltage Code C=20V/us E = 100V/us H=30 us J=25 us type code (see ratings) D=50V/us F=200V/us | K=20us L=15 us Typical code: R210CHO8FJO = 800 Very 800 Vorm 200 V/us dv/dt to 80% Voay 25 us turn-off | 9000-3988 *Other values of dv/dt up to 1000 V/ys, and turn-off time may be available. {WESTCODE SEMICONDUCTORS 1. (a) (b) (c) (d) (e) (a) INTRODUCTION The R210C thyristor series incorporates diffused silicon slices 30 mm diameter in cold-weld housings. Fast turn-on is achieved by interdigitation of the cathode, enabling these devices to withstand high di/dt and give low turn-on loss in chopper and inverter operation. (b) NOTES ON THE RATINGS Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000 A/ys at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 500 A/ys at any time during turn-on. Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/ys. Duty Cycle Lines The 100% duty cycle line appears on all these ratings. These frequency ratings are presented in the form that all duty cycles may be represented by straight parallel lines. Maximum operating Frequency The maximum operating frequency, fimax, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. 1 toutes + tq + tv Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not cevered by the frequency ratings. fax = Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Way =E, xf. REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voitage, no allowance for reverse recovery joss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. Determination by Measurement From waveforms of recovery current obtained 6. from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: 6 r10 +Faxt) (a) Tsink (new) = Tsink (original) A ( where r,= 1.23 x 10-4,/t t=duration of reverse recovery loss per pulse in microseconds (b) A= Area under reverse loss waveform per pulse in joules (W.S.) 396) mm 9709955 0002384 9 MEWESB 7-956 f=rated frequency at the original heat sink temperature The total dissipation is now given by Wotor) = Wioriginal) + A x f Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of energy per reverse cycle in joules (figure 7). Let f be the operating frequency in Hz then Tsink New = Tginx Original ER; x f where Tsink New is the required maximum heat sink temperature and Tsinx original is the heat sink temperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 ys. This gate drive must be applied when using the full di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0.1 F 10 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. Snubber Network Values A series connected C-R filter may be required across the anode to cathode terminals of the thyristor for the purpose of reducing off-state voltage overshoot. The optimum values for C and R depend partly on the circuits connected to the thyristor. For most applications the snubber design values should not exceed a maximum of 0.1 #F or a minimum of 10 ohms. Please consult Westcode for values outside these limits. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charg and peak reverse recovery current. When measuring the charge care must be taken to ensure that: a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.WESTCODE SEMICONDUCTORS 100 For at Force: >530 <630 Multiply Frequency by 1.0 0.8 (double side cooled 0.5 0.4 sla side cooled) 10 Ths = 85C 500 A/ys square wave 0.1 frequency, KHz 0.01 ) 0.01 0.1 1 10 pulse width, m.secs Figure 1 Frequency v. pulse width 100 at Force: >530 <530 Multiply 1.0 0.8 (double side cooled 0.5 0.4 Frequency by le side cooled) 10 Ths = 55C 500 A/us square wave 0.1 frequency, KHz 0. 0.01 0.1 1 pulse width, m.secs Figure 3 Frequency v. pulse width ) 10 35E D MM 9709955 0002385 0 MBUESB7-35-2h 100 For Rating at Mounting Force: >530 kgf <530 kgf Multiply 1.0 0.8 (double side cooled) 0.5 0.4 Frequency by (single side cooled) Pitty I Ett Ths = 85C 100 A/us square wave 0. N <= x > & 3 a 2 = 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 2. Frequency v. pulse width 100 For Rating at Force: >530 <530 Multiply 1.0 0.8 Frequency by (double side cooled) 5 . 0.4 (single side cooled) Ths = 55C 100 A/us square wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 4 Frequency v. pulse widthWESTCODE SEMICONDUCTORS 35E D MM 9709955 O000e38t e ME WESBT2S-20 100 100 10 @ 0.1 8 0.1 a 3 3 * Tj = 125C : Tj = 125C 8 500 A/us g 100 A/us < square wave > Square wave oO 5 0.01 3 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width 0.08 snubber connected 0.1 nF 10 Q 0.06 | Peak reverse voltage Vam=0.67 Varm max. (938 volts) 0.04 0.03 0.02 0.01 energy per pulse, joules 5 20 30 40 50 100 200 commutating di/dt, A/zs Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vam = 938 voltsWESTCODE SEMICONDUCTORS 100 at Mounting Force: >530 <530 Multiply 1.0 0.8 (double side cooled) 0.5 0.4 Frequency by single side cooled} 10 Ths = 85C sine wave 0.1 frequency, KHz 0.01 0.01 0.1 1 10 | pulse width, m.secs Figure 8 Frequency v. pulse width 100 at Mounting Force: >530 Multiply 1.0 0.8 Frequency by (double side cooled) 0.5 0.4 <530 (single side cooled) 10 Ths = 55C ne 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 10 Frequency v. pulse width recovered charge, Q,,, microcoulombs 39E D MM 9709955 0002387 4 ME UESBI-26:20 100 10 0.1 x > & & Tj = 125C a sine wave a 2 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 9 Energy/pulse v. pulse width 200 100 30 20 30 40 50 commutating di/dt, A/ys Figure 11 Maximum recovered charge at 125C junction temperature 100 200Fn eat lala WESTCODE SEMICONDUCTORS _ oO _ 0.01 transient thermal impedance, C/W 0.001 0.001 0.01 time, seconds Figure 12 Junction to heatsink transient thermal impedance 0.1 1 10 14 pk. max (Ig tr = Tp) 12 Vg 10 gate of all devices lie for details of these this area see figure 15 > max. (average) gate voltage, Vc, volts 0.1 03 05 1 3 5 10 gate current, Ic, amperes Figure 14 Gate characteristics at 25C junction temperature 10000 1000 peak on-state current, amperes 100 1.2 16 #20 24 28 3.2 on-state voltage, volts Figure 16 Limit on-state characteristics 36 40 44 Pg max. (pulse) GOW 8 10 k.amperes {gata may temparanty fosa control angie) {trav ox 1 100.5 5 10 50 100 m.secs cycles at 50 Hz duration of surge Figure 13 Max. non-repetitive surge current total peak haif-sine surge current, 39E D mm@ 9709955 0002348 &b ME WESB 7-25-20 108 108 q at initial junction temperature 125C Note: This rating must not be interpreted as an intermittent rating in this area no device will gate voltage, Vg, volts 0 0 100 200 300 gate current, Ig, milliamperes Figure 15 Gate triggering characteristics. Trigger points of all thyristors fie within the areas shown Gate drive load line must lie outside appropriate I,/V, rectangle 8 D3.6x19 4.8 (49) . : . . (44.075) dimensions in mm (inches) 2-Hoes Mounting force: 530-1000 kgf Weight: 90 grams Note: Box Clamp mounting Box Clamp No. 101A226B Mounting force: 365 kgf min. maximum [2t (amps2 secs) Renj-hs) 0.125C/W COMPRESSED .42(1.65) HEIGHT 254 0.3(.01) | (.99) | + 03(.01) @ 254 tins wr SEEM nec (9/58) No.60598-1 TO - 200AB In the interest of product improvement, Westcode reserves the ght to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 fig HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd. Printed by The Pheon Press, Bristol 2M85