oH S CO M PL IA NT TISP4070L3AJ THRU TISP4395L3AJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxL3AJ Overvoltage Protector Series SMA (DO-214AC) Package 25% Smaller Placement Area than SMB SMAJ Package (Top View) Ion-Implanted Breakdown Region Precise and Stable Voltage VDRM V(BO) V V `4070 58 70 `4080 65 80 Device `4090 70 90 `4125 100 125 `4145 120 145 `4165 135 165 `4180 145 180 `4220 160 220 `4240 180 240 `4260 200 260 `4290 230 290 `4320 240 320 `4350 275 350 `4360 290 360 `4395 320 395 R (B) 1 MDXXCCE Device Symbol T SD4XAA R T erminals T and R correspond to the alternative line designators of A and B ............................................ UL Recognized Components Rated for International Surge Wave Shapes ITSP Wave Shape Standard 2/10 s GR-1089-CORE 125 A 8/20 s IEC 61000-4-5 100 10/160 s FCC Part 68 65 10/700 s ITU-T K.20/21/45 50 10/560 s FCC Part 68 40 10/1000 s GR-1089-CORE 30 How To Order Device TISP 4xxxL3AJ Package SMA (DO-214AC) 2 T (A) Carrier Embossed Tape Reel Pack Order As TISP4xxxL3AJR-S Insert xxx value corresponding to protection voltages of 070, 080, 090, etc. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ (JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100 A 10/1000 TISP4xxxH3BJ series in SMB are available. Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage, (see Note 1) Symbol `4070 `4080 `4090 `4125 `4145 `4165 `4180 `4220 `4240 `4260 `4290 VDRM Value 58 65 70 100 120 135 145 160 180 200 230 `4320 240 `4350 `4360 `4395 275 290 320 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/310 s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms (50 Hz) full sine wave 1 s (50 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. ITSP 125 100 65 50 50 40 30 ITSM 18 7 1.6 Unit V A A Junction temperature TJ -40 to +150 C Storage temperature range Tstg -65 to +150 C NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/C. 2. Initially, the TISP4xxxL3 must be in thermal equilibrium with TJ = 25 C. 3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions. 4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C. JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Recommended Operating Conditions Component RS Min Typ Max Unit series resistor for FCC Part 68, 10/560 type A surge survival 12 series resistor for FCC Part 68, 9/720 type B surge survival 0 series resistor for GR-1089-CORE first-level and second-level surge survival 23 series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival 0 series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector 7 Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current V(BO) Breakover voltage I(BO) IH dv/dt Test Conditions VD = VDRM dv/dt = 250 V/ms, R SOURCE = 300 Breakover current dv/dt = 250 V/ms, Holding current I T = 5 A, di/dt = +/-30 mA/ms Critical rate of rise of off-state voltage TA = 25 C Min Max 5 TA = 85 C 10 `4070 70 `4080 80 `4090 90 `4125 125 `4145 145 `4165 165 `4180 180 `4220 220 `4240 240 `4260 260 `4290 290 `4320 320 `4350 350 `4360 360 `4395 395 R SOURCE = 300 Linear voltage ramp, Maximum ramp value < 0.85V DRM Typ 0.15 Unit A V 0.8 A 0.60 A kV/s 5 `4070, VD = 52 V `4080, VD = 59 V `4090, VD = 63 V `4125, VD = 90 V `4145, VD = 108 V `4165, VD = 122 V `4180, VD = 131 V ID Off-state current `4220, VD = 144 V 2 A 10 A `4240, VD = 162 V `4260, VD = 180 V `4290, VD = 207 V `4320, VD = 216 V `4350, VD = 248 V `4360, VD = 261 V `4395, VD = 288 V ID Off-state current VD = 50 V JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) (Continued) Parameter Test Conditions f = 1 MHz, Vd = 1 V rms, VD = 1 V Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = 50 V Min 4070 thru `4090 `4125 thru `4220 `4240 thru `4395 `4070 thru `4090 `4125 thru `4220 `4240 thru `4395 Typ Max Unit 53 40 33 25 18 14 64 48 40 30 22 17 pF Typ Max Unit Thermal Characteristics Parameter RJA Junction to free air thermal resistance Test Conditions Min EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 75) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C 115 C/W 52 NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH V DRM -v IDRM ID VD ID IDRM VD VDRM +v IH I(BO) VT V(BO) IT ITSM I Quadrant III ITSP Switching Characteristic -i Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PMXXAAB TISP4xxxL3AJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC4LAG 10 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4LAF Normalized Breakover Voltage |ID| - Off-State Current - A VD = 50 V 1 0*1 0*01 1.10 1.05 1.00 0.95 0.90 0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C -25 150 2.0 TC4MAM 7 5 4 3 0.7 0.5 0.7 100 125 150 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4LAD 1.5 10 1 75 TA = 25 C tW = 100 s 20 15 2 1.5 50 Figure 3. Normalized Holding Current IT - On-State Current - A 50 40 30 25 TJ - Junction Temperature - C Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE 0 '4070 THRU '4090 '4240 THRU '4395 1 Figure 4. 0.9 0.8 0.7 0.6 0.5 '4125 THRU '4220 1.5 2 3 4 5 VT - On-State Voltage - V 1.0 0.4 7 10 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150 Figure 5. JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Typical Characteristics DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4LABC 1 TCLAEB 30 0.9 Capacitance Normalized to VD = 0 0.7 C - Differential Off-State Capacitance - pF TJ = 25 C Vd = 1 Vrms 0.8 0.6 0.5 '4070 THRU '4090 0.4 '4125 THRU '4220 0.3 '4240 THRU '4395 0.2 0.5 1 2 3 5 10 20 30 VD - Off-state Voltage - V 50 25 C = Coff(-2 V) - Coff(-50 V) 20 15 10 50 100150 |Coff(+VD) - C off(-VD) | -- Capacitance Asymmetry -- pF Figure 6. 60 70 80 90100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V Figure 7. TYPICAL CAPACITANCE ASYMMETRY vs TC4LBB OFF-STATE VOLTAGE 1 Vd = 10 mV rms,1 MHz Vd = 1 Vrm s, 1 MHz 0 1 2 3 4 5 7 10 20 VD -- Off-state Voltage - V Figure JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 6. 30 40 50 TISP4xxxL3AJ Overvoltage Protector Series Rating and Thermal Information VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4LAI 20 15 10 9 8 7 6 0.99 0.98 5 4 '4070 THRU '4090 0.97 0.96 '4125 THRU '4220 3 0.95 2 0.94 1.5 0.01 0.1 1 t - Current Duration - s Figure 9. 10 TI4LADB 1.00 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C Derating Factor ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 100 '4240 THRU '4395 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - C Figure 10. JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series MECHANICAL DATA Recommended Printed Wiring Land Pattern Dimensions SMA Land Pattern 2.34 (. 092) 1.90 (.075) 2.16 (.085) MILLIMETERS DIMENSIONS ARE: (INCHES) MDXX BIC Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Device Symbolization Code TISP4070L3 4070L TISP4080L3 4080L TISP4090L3 4090L TISP4125L3 4125L TISP4145L3 4145L TISP4165L3 4165L TISP4180L3 4180L TISP4220L3 4220L TISP4240L3 4240L TISP4260L3 4260L TISP4290L3 4290L TISP4320L3 4320L TISP4350L3 4350L TISP4360L3 4360L TISP4395L3 4395L Carrier Information For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. Carrier Standard Quantity Embossed Tape Reel Pack 5,000 "TISP" is a trademark of Bourns, Ltd., a Bourns Company and Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.