LQA10T150C, LQA10N150C
Qspeed™ Family
150 V, 10 A Common-Cathode Diode
www.power.com January 2015
Product Summary
IF(AVG) per diode 5 A
VRRM 150 V
QRR (Typ at 125 °C) 21.4 nC
IRRM (Typ at 125 °C) 1.41 A
Softness tb/ta (Typ at 125 °C) 0.59
TO-220AB TO-252 DPAK
LQA10T150C LQA10N150C
RoHS Compliant
Package uses Lead-free plating and “Green” mold
compound Halogen free per IEC 61249-2-21.
General Description
This device has the lowest QRR of any 150 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• AC/DC and DC/DC output rectification
• Output and freewheeling diodes
• Motor drive circuits
• DC-AC inverters
Features
• Low QRR, Low IRRM, Low tRR
• High dIF/dt capable
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size and count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
Parameter Conditions Rating Units
VRRM Peak repetitive reverse voltage TJ = 25 °C 150 V
IF(AVG) Average forward current Per Diode, TJ = 150 °C, TC = 130 °C 5 A
Per Device, TJ = 150 °C, TC = 130 °C 10 A
IFSM Non-repetitive peak surge current Per Diode, 60 Hz, ½ cycle 60 A
IFSM Non-repetitive peak surge current Per Diode, ½ cycle of t = 28 µs
Sinusoid, TC = 25 °C 350 A
TJ Operating junction temperature range –55 to 150 °C
TSTG Storage temperature –55 to 150 °C
Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 °C
PD Power dissipation TC = 25 °C 27.7 W
Thermal Resistance
Symbol Resistance from: Conditions Rating Units
RθJA Junction to ambient TO-220AB (only) 62 °C/W
RθJC Junction to case Per Diode 4.5 °C/W
Per Device 2.3 °C/W
Pin Assignment
A1 K
A2
A1 K
A2
www.power.com Rev. 1.0 01/15
LQA10T150C, LQA10N150C
2
Electrical Specifications at TJ = 25 °C (unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
DC Characteristics per diode
IR Reverse current per diode VR = 150 V, TJ = 25 °C - - 250 µA
VR = 150 V, TJ = 125 °C - 0.1 - mA
VF Forward voltage per diode IF = 5 A, TJ = 25 °C - 0.95 1.1 V
IF = 5 A, TJ = 150 °C - 0.8 - V
CJ Junction capacitance per
diode VR = 10 V, 1 MHz - 22 - pF
Dynamic Characteristics per diode
tRR Reverse recovery time,
per diode dIF/dt = 100 A/µs
VR = 100 V,
IF = 5 A
TJ = 25 °C - 15.1 - ns
TJ = 125 °C - 23.6 - ns
QRR Reverse recovery charge,
per diode dIF/dt = 100 A/µs
VR = 100 V,
IF = 5 A
TJ = 25 °C - 8.6 21.3 nC
TJ = 125 °C - 21.4 - nC
IRRM Maximum reverse
recovery current, per
diode
dIF/dt = 100 A/µs
VR = 100 V,
IF = 5 A
TJ = 25 °C - 0.92 2.06 A
TJ = 125 °C - 1.41 - A
S Softness per diode = a
b
t
t dIF/dt = 100 A/µs
VR = 100 V,
IF = 5 A
TJ = 25 °C - 0.69 -
TJ = 125 °C - 0.59 -
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
Pulse generator
Rg Q1
VR
+
15V
D1
DUT
L1
IF
dIF/dt
IRRM
tRR
tb
ta
0
0.1xIRRM
Rev. 1.0 01/15 www.power.com
LQA10T150C, LQA10N150C
3
Electrical Specifications at TJ = 25 °
°°
°C (unless otherwise specified)
0
1
2
3
4
5
6
7
8
9
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
(A)
V
F
(V)
Tj=125C
Tj=25C
Figure 3. Typical IF vs VF
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
F
(A)
V
F
(V)
Tj=125C
Tj=25C
Figure 4. Typical IF vs VF
0
20
40
60
80
100
0 20 40 60 80 100 120 140 160 180
Cj (pF)
VR (V)
Figure 5. Typical Cj vs VR
0
2
4
6
8
10
12
14
16
18
20
25 50 75 100 125 150
I
F(AV)
(A)
Case Temperature, T
C
(
o
C)
Figure 6. DC Current Derating Curve
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10
QRR (nC)
IF(A)
dI
F
/dt=100A/us
Figure 7. Typical QRR vs IF at Tj=125 °C
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10
tRR (ns)
IF(A)
dIF/dt=100A/us
Figure 8. Typical tRR vs IF at Tj=125 °C
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LQA10T150C, LQA10N150C
4
0.001
0.01
0.1
1
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
t1(sec)
LQA10x150C
D=0.002
D=0.005
D= 0.01
D= 0.02
D= 0.05
D= 0.1
D = 0.3
D= 0.5
Single Pulse
Figure 11. Normalized Maximum Transient Thermal Impedance
0
5
10
15
20
25
30
25 50 75 100 125 150
P (W)
Case Temperature, T
C
(
o
C)
Figure 9. Power Derating Curve
0
2
4
6
8
10
12
14
16
18
20
25 50 75 100 125 150
I
F
(PEAK) (A)
T
C
(°C)
duty cycle=10%
duty cycle=50%
duty cycle=30%
DC
Figure 10. IF (Peak) vs TC, f = 70 kHz
Rev. 1.0 01/15 www.power.com
LQA10T150C, LQA10N150C
5
Dimensional Outline Drawings
TO-220AB
Mechanical Mounting Method
Maximum Torque / Pressure specification
Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in)
Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm
2
) or 175 lbf/in
2
TO-252 DPAK
Millimeters
Dim MIN MAX
A 4.32 4.70
A1 1.11 1.38
A2 2.59 2.79
b 0.77 1.00
b2 1.23 1.36
C 0.34 0.47
D 14.71 15.75
D1 9.05 9.25
E 9.96 10.36
e 2.44 2.64
e1 4.98 5.18
L 12.70 14.22
L1 – 3.90
ØP 3.71 3.96
Q 2.54 2.90
Millimeters
Dim MIN MAX
A 2.20 2.38
A1 0 0.10
A2 0.90 1.10
b 0.72 0.85
b2 0.72 0.90
b3 5.13 5.46
c2 0.47 0.60
D 6.00 6.20
E 6.50 6.70
e 2.186 2.386
H 9.80 10.40
L 1.40 1.70
L1 2.90 REF
L2 0.51 BSC
L3 0.90 1.25
L4 0.60 1.00
L5 0.15 0.75
L6 1.80 REF
Θ 0° 8°
Θ1 5° 9°
c
AA1
A2
øP
E
Q
D
D1
ee1
L
L1
b
b2
c
AA1
A2
øP
E
Q
D
D1
ee1
L
L1
b
b2
www.power.com Rev. 1.0 01/15
LQA10T150C, LQA10N150C
6
Soldering time and temperature: This product has been designed for use with high-
temperature, lead-free solder. The component leads can be subjected to a maximum
temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more
details.
Ordering Information
Part Number Package Packing
LQA10T150C TO-220AB 50 units/tube
LQA10N150C TO-252 DPAK 2500 units/reel
The information contained in this document is subject to change without notice.
Rev. 1.0 01/15 www.power.com
LQA10T150C, LQA10N150C
7
Revision
Note
s
Date
1.0 Initial Release 12/14
1.0 Corrected IF(AVG) per diode to 5 A on page 1. 01/15
www.power.com Rev. 1.0 01/15
LQA10T150C, LQA10N150C
8
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www.power.com
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FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits’ external to the
products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent
applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at
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http://www.power.com/ip.htm.
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