Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5896 Rev E 2-2010
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (VGS = 12V, 29A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN TYP MAX
500
58
0.09
25
250
±100
2 4
UNIT
Volts
Amps
Ohms
μA
nA
Volts
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
• Higher FBSOA
• Higher Power Dissipation
• Popular T-MAX™ or TO-264 Package
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL502B2_L (G)
500
58
232
±30
±40
730
5.84
-55 to 150
300
58
50
3000
T-MaxTM
TO-264
G
D
S
Microsemi Website - http://www.microsemi.com
APL502B2(G)
APL502L(G)
500V, 58A, 0.090Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
DYNAMIC CHARACTERISTICS APL502B2_L(G)
050-5896 Rev E 2-2010
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
MIN TYP MAX
7485 9000
1290 1810
617 930
13 26
27 54
56 84
16 20
UNIT
pF
ns
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 250V
ID = 29A @ 25°C
RG = 0.6W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A
2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
ZθJC, THERMAL IMPEDANCE (°C/W)
SINGLE PULSE
Characteristic
Junction to Case
Package Weight
Symbol
RqJC
WT
MIN TYP MAX
.17
0.22
5.9
UNIT
°C/W
oz
g
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V
VGS=20V
NORMALIZED TO
VGS = 10V @ 29A
050-5896 Rev E 2-2010
Typical Performance Curves
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
0 2 4 6 8 10 0 20 40 60 80 100 120
25 50 75 100 125 150 -50 0 50 100 150
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
80
60
40
20
0
60
50
40
30
20
10
0
APL502B2_L(G)
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0 50 100 150 200 250 0 5 10 15 20 25 30
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
7 V
6 V
6.5 V
VGS=10V, 15 V
5.5 V
7 V
6 V
6.5 V
5.5 V
7.5 V
VGS=10, 15V
7.5 V
8 V 8 V
R
DS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) (NORMALIZED)
V
GS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
J, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
ID = 29A
VGS = 12V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
2.5
2.0
1.5
1.0
0.5
0.0
APL502B2_L(G)
050-5896 Rev E 2-2010
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline TO-264 (L) Package Outline
I
D, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
400
100
10
1
0.1
400
100
10
1
0.1
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, FORWARD SAFE OPERATING AREA FIGURE 11, MAXIMUM FORWARD SAFE OPERATING AREA
.01 .1 1 10 50
C, CAPACITANCE (pF)
30,000
10,000
5,000
1,000
500
100
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 12, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Scaling for Different Case & Junction
Temperatures:
ID = ID (TC = 25°C)*(TC - TJ)/125
TJ = 125°C
TC = 75°C
DC line
10mS
1mS
100mS
13mS
Rds(on)
IDM
1 10 100 800 1 10 100 800
DC line
100mS
10mS
100mS
13mS
Rds(on)
IDM
Ciss
Coss
Crss
100mS
1mS
TJ = 150°C
TC = 25°C
e1 SAC 96.5% Sn, 3.0% Ag, 0.5% Cu Plated
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
