BC337 SERIES
SILICON
NPN TRANSISTORS DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC337 series
devices are silicon NPN transistors designed for general
purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 800 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
Thermal Resistance ΘJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICES V
CE=45V 100 nA
ICBO V
CB=30V 100 nA
IEBO V
EB=4.0V 100 nA
BVCES I
C=100μA 50 V
BVCEO I
C=10mA 45 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=500mA, IB=50mA 0.7 V
VBE(ON) V
CE=1.0V, IC=300mA 1.2 V
hFE V
CE=1.0V, IC=100mA (BC337) 100 630
hFE V
CE=1.0V, IC=100mA (BC337-16) 100 250
hFE V
CE=1.0V, IC=100mA (BC337-25) 160 400
hFE V
CE=1.0V, IC=100mA (BC337-40) 250 630
hFE V
CE=1.0V, IC=300mA 60
fT V
CE=5.0V, IC=10mA, f=100MHz 210 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 15 pF
R2 (6-August 2014)
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