IPA60R385CP CoolMOS(R) Power Transistor Product Summary Features V =L1[%^Ri V)DL:HI;><JG: D; B:G>I/ HGM.@ /.) R =L"_#%^Ri@T [Y V2AIG6ADL<6I:8=6G<: O )',1. " Q X%eja *0 _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN *# V.J6A>;>:9for industrial grade applications 688DG9>C<ID'"!" V-7 ;G::A:69EA6I>C</D%08DBEA>6CI; Halogen free mold compound I@&MH++) CoolMOS is specially designed for: V%6G9HL>I8=>C<0*-0IDEDAD<>:H Type Package Ordering Code Marking BI9/)K,1.<I I@&MH++) LI))))12,*/ /K,1.I Maximum ratings, 6IT [Y JCA:HHDI=:GL>H:HE:8>;>:9 Parameter DCI>CJDJH9G6>C8JGG:CI +# Symbol Conditions I= Value T <Y 2') T < .'0 Y -JAH:99G6>C8JGG:CI,# I =%af]dV T <Y +0 K6A6C8=::C:G<N H>C<A:EJAH: E 9L I = V == 3 ++0 K6A6C8=::C:G<N G:E:I>I>K:t 9K,#-# E 9K I = V == 3 )', K6A6C8=:8JGG:CI G:E:I>I>K:t 9K,#%-# I 9K *,0#"19v (Ut GJ<<:9C:HH 9v (Ut V =L $6I:HDJG8:KDAI6<: V @L -DL:G9>HH>E6I>DC P ee ,E:G6I>C<6C9HIDG6<:I:BE:G6IJG: T [ T deX *DJCI>C<IDGFJ: Rev. 2.3 Unit 9 ^C , 9 .) O(_d deReZT v+) O f %O v,) T <Y ,* P u< 3 * H8G:LH Page 1 +8B 2018-02-14 IPA60R385CP Maximum ratings, 6IT [Y JCA:HHDI=:GL>H:HE:8>;>:9 Parameter DCI>CJDJH9>D9:;DGL6G98JGG:CI +# Value Symbol Conditions IL Unit 2 9 T <Y !>D9:EJAH:8JGG:CI,# I L%af]dV +0 /:K:GH:9>D9:9v (Ut .# Uv (Ut *. O(_d Parameter Symbol Conditions Values Unit min. typ. max. & & - Thermal characteristics 1=:GB6AG:H>HI6C8: ?JC8I>DC 86H: R eYC< 1=:GB6AG:H>HI6C8: ?JC8I>DC R^SZV_e R eYC9 ]VRUVU & & 1) 0DA9:G>C<I:BE:G6IJG: L6K:HDA9:G>C<DCAN6AADL:96IA:69H T d]U BB >C ;GDB86H:;DG H & & +/) u< O Electrical characteristics, 6IT [Y D(P JCA:HHDI=:GL>H:HE:8>;>:9 Static characteristics !G6>C HDJG8:7G:6@9DLCKDAI6<: V ";K#=LL V @L 3 I = [ /)) & & $6I:I=G:H=DA9KDAI6<: V @L"eY# V =L6V @L I = B +'. , ,'. 5:GD<6I:KDAI6<:9G6>C8JGG:CI I =LL V =L 3 V @L 3 T [Y & & * V =L 3 V @L 3 T [ Y & *) & w9 $6I: HDJG8:A:6@6<:8JGG:CI I @LL V @L 3 V =L 3 & & *)) _9 !G6>C HDJG8:DC HI6I:G:H>HI6C8: R =L"_# V @L 3 I = T [Y & )',. )',1. " V @L 3 I = T [ Y & )'2- & $6I:G:H>HI6C8: Rev. 2.3 R@ f *%O DE:C9G6>C Page 2 " 2018-02-14 IPA60R385CP Parameter Values Symbol Conditions Unit min. typ. max. & 02) & & ,1 & & ,/ & Dynamic characteristics &CEJI86E68>I6C8: C Zdd ,JIEJI86E68>I6C8: C dd ";;:8I>K:DJIEJI86E68>I6C8: :C:G<N C "Vc# cV]ReVU/# V @L 3 V =L f *%O 3 a? V @L 3 V =L 3 ID 3 ";;:8I>K:DJIEJI86E68>I6C8: I>B: cV]ReVU0# C "ec# & 2/ & 1JGC DC9:A6NI>B: t U"_# & *) & />H:I>B: tc & . & 1JGC D;;9:A6NI>B: t U"WW# & -) & #6AAI>B: tW & . & $6I:IDHDJG8:8=6G<: Q Xd & - & $6I:ID9G6>C8=6G<: Q XU & / & $6I:8=6G<:IDI6A QX & *0 ++ $6I:EA6I:6JKDAI6<: V a]ReVRf & .') & O & )'2 *'+ O & +/) & _d & ,'* & w< & +- & 9 V == 3 V @L 3 I = R @ " _d $6I: =6G<: =6G68I:G>HI>8H V == 3 I = V @L ID 3 _< Reverse Diode !>D9:;DGL6G9KDAI6<: V L= /:K:GH:G:8DK:GNI>B: t cc /:K:GH:G:8DK:GN8=6G<: Q cc -:6@G:K:GH:G:8DK:GN8JGG:CI I cc^ V @L 3 I ? T [Y V K 3 I ?6I L Ui ?(Ut [H *# ' 01! 6C9'"0! +# )>B>I:9DCAN7NB6M>BJBI:BE:G6IJG: ,# -JAH:L>9I=t aA>B>I:97NT [%^Ri -# /:E:I>I>K:6K6A6C8=:86JH:H699>I>DC6AEDL:GADHH:HI=6I86C7:86A8JA6I:96HP 9O6E 9K$f. .# &L="B= 9> 9I" [H 3=<]Z_\ 3 3aVR\5O";K#=LL 1[5M[^Ri >9:CI>86AADLH>9:6C9=><=H>9:HL>I8= /# C "Vc#>H6;>M:986E68>I6C8:I=6I<>K:HI=:H6B:HIDG:9:C:G<N6HC ddL=>A:V =L>HG>H>C<;GDB ID V =LL' 0# C "ec#>H6;>M:986E68>I6C8:I=6I<>K:HI=:H6B:8=6G<>C<I>B:6HC ddL=>A:V =L>HG>H>C<;GDB ID V =LL' Rev. 2.3 Page 3 2018-02-14 IPA60R385CP 1 Power dissipation 2 Safe operating area P ee6W"T <# I =6W"V =LT <Y D 6) E6G6B:I:Gt a 102 35 A>B>I:97NDC HI6I: cVdZdeR_TV 30 [H 25 [H 1 20 I D [A] P tot [W] 10 [H BH 15 BH 100 10 =< 5 0 10 0 40 80 120 -1 160 100 101 102 103 V DS [V] T C [C] 3 Max. transient thermal impedance 4 Typ. output characteristics Z eYC<6W"t I# I =6W"V =LT [Y E6G6B:I:GD=t a(T E6G6B:I:GV @L 101 25 3 3 3 )'. 20 3 Z thJC [K/W] 100 )'+ 3 15 I D [A] )'* )'). )')+ 10-1 3 10 )')* 3 H>C<A:EJAH: 5 3 0 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] Rev. 2.3 0 5 10 15 20 V DS [V] Page 4 2018-02-14 IPA60R385CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6W"V =LT [ Y R =L"_#6W"I =T [ Y E6G6B:I:GV @L E6G6B:I:GV @L 2.4 16 3 3 14 3 3 2 3 12 3 8 R DS(on) [ ] I D [A] 10 3 6 1.6 3 3 3 3 1.2 3 3 3 4 0.8 2 0.4 0 0 5 10 15 0 20 5 10 15 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =L"_#6W"T [I = V @L 3 I =6W"V @LPV =Ll7+lI =lR =L"_#^Ri E6G6B:I:GT [ 40 1.2 36 Y 1 32 28 24 I D [A] R DS(on) [ ] 0.8 0.6 Y 16 0.4 20 eja 12 8 0.2 4 0 0 -60 -20 20 60 100 140 180 2 4 6 8 10 V GS [V] T j [C] Rev. 2.3 0 Page 5 2018-02-14 IPA60R385CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6W"Q XReVI = EJAH:9 I ?6W"V L=# E6G6B:I:GV == E6G6B:I:GT [ 102 10 8 3 3 Y Y Y 101 I F [A] V GS [V] 6 4 100 Y 2 0 10-1 0 5 10 15 20 0 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E 9L6W"T [I = V == 3 V ;K"=LL#6W"T [I = B 250 700 200 660 E AS [mJ] V( BR)DSS [V] 150 100 620 580 50 0 540 20 60 100 140 180 T j [C] Rev. 2.3 -60 -20 20 60 100 140 180 T j [C] Page 6 2018-02-14 IPA60R385CP 13 Typ. capacitances 14 Typ. Coss stored energy C 6W"V =LV @L 3f *%O E dd= W(V =L) 104 6 5 <Zdd 103 E oss [J] C [pF] 4 102 <dd 3 2 10 1 1 <cdd 100 0 ) *)) +)) ,)) -)) .)) V DS [V] Rev. 2.3 0 100 200 300 400 500 600 V DS [V] Page 7 2018-02-14 IPA60R385CP Definition of diode switching characteristics Rev. 2.3 Page 8 2018-02-14 IPA60R385CP Outline PGTO220 FullPAK 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 oP Q Rev. 2.3 Page 9 MILLIMETERS MIN. MAX. 4.90 4.50 2.85 2.34 2.86 2.42 0.90 0.65 0.95 1.38 1.51 0.95 0.65 1.38 0.65 1.51 0.63 0.40 16.15 15.67 9.83 8.97 10.65 10.00 2.54 28.70 29.75 13.75 12.78 3.45 2.83 3.30 3.00 3.50 3.15 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 0 1 2 5:1 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 2018-02-14 600VCoolMOSCPPowerTransistor IPA60R385CP RevisionHistory IPA60R385CP Revision:2018-02-22,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2018-02-22 Outline PG-TO220 FullPAK Update TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.3,2018-02-22