IPA60R385CP
CoolMOS®Power Transistor
Features
V฀)DL:HI฀;><JG:D;B:G>I฀/HG฀M฀.@
V฀2AIG6฀ADL฀<6I:฀8=6G<:
V฀"MIG:B:฀9K9I฀G6I:9
V฀%><=฀E:6@฀8JGG:CI฀86E67>A>IN
V฀.J6A>;>:9฀for industrial grade applications 688DG9>C<฀ID฀'"!" *#
V฀-7;G::฀A:69฀EA6I>C<฀/D%0฀8DBEA>6CI; Halogen free mold compound
CoolMOS is specially designed for:
V฀%6G9฀HL>I8=>C<฀0*-0฀IDEDAD<>:H
Maximum ratings, 6I฀T[฀Y ฀JCA:HH฀DI=:GL>H:฀HE:8>;>:9
Parameter Symbol Conditions Unit
DCI>CJDJH฀9G6>C฀8JGG:CI+# I=T<฀Y 9
T<฀Y
-JAH:9฀9G6>C฀8JGG:CI,# I=%af]dV T<฀Y
K6A6C8=:฀:C:G<N฀H>C<A:฀EJAH: E9L I=฀฀V==฀3 ++0 ^C
K6A6C8=:฀:C:G<N฀G:E:I>I>K:฀t9K
,#-# E9K I=฀฀V==฀3
K6A6C8=:฀8JGG:CI฀G:E:I>I>K:฀t9K
,#%-# I9K 9
*,0#"1฀9v(Ut฀GJ<<:9C:HH 9v(UtV=L฀3 O(_d
$6I:฀HDJG8:฀KDAI6<: V@L deReZT O
 ฀f฀%O
-DL:G฀9>HH>E6I>DC Pe`e T<฀Y P
,E:G6I>C<฀6C9฀HIDG6<:฀I:BE:G6IJG: T[฀TdeX u<
*DJCI>C<฀IDGFJ: *฀H8G:LH  +8B
v,)
,*
฀฀
)',
,
.)
v+)
Value
2')
.'0
+0
V=L฀฀1[%^Ri /.) O
R=L"`_#%^Ri@T [฀Y )',1. "
QX%eja *0 _<
Product Summary
Type Package Ordering Code Marking
BI9/)K,1.<I I@&MH++) LI))))12,*/ /K,1.I
I@&MH++)
Rev. 2.3
Page 1
2018-02-14
IPA60R385CP
Maximum ratings, 6I฀T[฀Y ฀JCA:HH฀DI=:GL>H:฀HE:8>;>:9
Parameter Symbol Conditions Unit
DCI>CJDJH฀9>D9:฀;DGL6G9฀8JGG:CI+# IL9
!>D9:฀EJAH:฀8JGG:CI,# IL%af]dV +0
/:K:GH:฀9>D9:฀9v(Ut.# Uv(Ut*. O(_d
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1=:GB6A฀G:H>HI6C8:฀?JC8I>DC฀฀86H: ReYC< & & - D(P
ReYC9 ]VRUVU & & 1)
0DA9:G>C<฀I:BE:G6IJG:฀
L6K:HDA9:G>C<฀DCAN฀6AADL:9฀6I฀A:69H Td`]U
฀BB฀฀>C฀
;GDB฀86H:฀;DG฀฀H & & +/) u<
Electrical characteristics, 6I฀T[฀Y ฀JCA:HH฀DI=:GL>H:฀HE:8>;>:9
Static characteristics
!G6>CHDJG8:฀7G:6@9DLC฀KDAI6<: V";K#=LL V@L฀3฀I=฀[ /)) & & O
$6I:฀I=G:H=DA9฀KDAI6<: V@L"eY# V=L6V@L฀I=฀B +'. , ,'.
5:GD฀<6I:฀KDAI6<:฀9G6>C฀8JGG:CI I=LL
V=L฀3฀V@L฀3฀
T[฀Y & & * w9
V=L฀3฀V@L฀3฀
T[฀Y & *) &
$6I:HDJG8:฀A:6@6<:฀8JGG:CI I@LL V@L฀3฀V=L฀3 & & *)) _9
!G6>CHDJG8:฀DCHI6I:฀G:H>HI6C8: R=L"`_#
V@L฀3฀I=฀฀
T[฀Y & )',. )',1. "
V@L฀3฀I=฀฀
T[฀Y & )'2- &
$6I:฀G:H>HI6C8: R@f฀*%O฀DE:C฀9G6>C  "
Value
T<฀Y
2
Values
1=:GB6A฀G:H>HI6C8:฀?JC8I>DC฀฀
R^SZV_e
Rev. 2.3
Page 2
2018-02-14
IPA60R385CP
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
&CEJI฀86E68>I6C8: CZdd & 02) & a?
,JIEJI฀86E68>I6C8: C`dd & ,1 &
";;:8I>K:฀DJIEJI฀86E68>I6C8:฀:C:G<N฀
cV]ReVU/# C`"Vc# & ,/ &
";;:8I>K:฀DJIEJI฀86E68>I6C8:฀I>B:฀
cV]ReVU0# C`"ec# & 2/ &
1JGCDC฀9:A6N฀I>B: tU"`_# & *) & _d
/>H:฀I>B: tc& . &
1JGCD;;฀9:A6N฀I>B: tU"`WW# & -) &
#6AA฀I>B: tW& . &
$6I:฀ =6G<:฀ =6G68I:G>HI>8H
$6I:฀ID฀HDJG8:฀8=6G<: QXd & - & _<
$6I:฀ID฀9G6>C฀8=6G<: QXU & / &
$6I:฀8=6G<:฀IDI6A QX& *0 ++
$6I:฀EA6I:6J฀KDAI6<: Va]ReVRf & .') & O
Reverse Diode
!>D9:฀;DGL6G9฀KDAI6<: VL=
V@L฀3฀I?฀฀
T[฀Y & )'2 *'+ O
/:K:GH:฀G:8DK:GN฀I>B: tcc & +/) & _d
/:K:GH:฀G:8DK:GN฀8=6G<: Qcc & ,'* & w<
-:6@฀G:K:GH:฀G:8DK:GN฀8JGG:CI Icc^ & +- & 9
*#฀'01!฀6C9฀'"0!
+#฀)>B>I:9฀DCAN฀7N฀B6M>BJB฀I:BE:G6IJG:
,#฀-JAH:฀L>9I=฀ta฀A>B>I:9฀7N฀T[%^Ri
-#฀/:E:I>I>K:฀6K6A6C8=:฀86JH:H฀699>I>DC6A฀EDL:G฀ADHH:H฀I=6I฀86C฀7:฀86A8JA6I:9฀6H฀P9O6E9K$f.
.#฀&L="B=฀9>9I"[H฀3=<]Z_\3฀3aVR\5O";K#=LL฀1[5M[^Ri฀>9:CI>86A฀ADL฀H>9:฀6C9฀=><=฀H>9:฀HL>I8=
/# C`"Vc#฀>H฀6฀;>M:9฀86E68>I6C8:฀I=6I฀<>K:H฀I=:฀H6B:฀HIDG:9฀:C:G<N฀6H฀C`dd฀L=>A:฀V=L฀>H฀G>H>C<฀;GDB฀฀ID฀฀V=LL'
0# C`"ec#฀>H฀6฀;>M:9฀86E68>I6C8:฀I=6I฀<>K:H฀I=:฀H6B:฀8=6G<>C<฀I>B:฀6H฀C`dd฀L=>A:฀V=L฀>H฀G>H>C<฀;GDB฀฀ID฀฀V=LL'
VK฀3฀I?6IL฀
Ui?(Ut฀[H
Values
V@L฀3฀V=L฀3฀
f฀*%O
V==฀3฀
V@L฀3฀I=฀฀
R@฀"
V==฀3฀I=฀฀
V@L฀ID฀฀3
V@L฀3฀V=L฀3฀
ID฀฀3
Rev. 2.3
Page 3
2018-02-14
IPA60R385CP
1 Power dissipation 2 Safe operating area
Pe`e6W"T<#I=6W"V=L฀T<฀Y ฀D6)
E6G6B:I:G฀ta
3 Max. transient thermal impedance 4 Typ. output characteristics
ZeYC<6W"tI#I=6W"V=L฀T[฀Y
E6G6B:I:G฀D=t a(TE6G6B:I:G฀V@L
0
5
10
15
20
25
30
35
0 40 80 120 160
TC[°C]
Ptot [W]
฀[H
฀[H
฀[H
฀BH
฀BH
=<
103
102
101
100
102
101
100
10-1
VDS [V]
ID[A]
H>C<A:฀EJAH:
)')*
)')+
)').
)'*
)'+
)'.
101
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp[s]
ZthJC [K/W]
฀3
฀3
฀3
฀3
฀3
฀3
฀3
฀3
0
5
10
15
20
25
0 5 10 15 20
VDS [V]
ID[A]
A>B>I:9฀7N฀DCHI6I:
cVdZdeR_TV
Rev. 2.3
Page 4
2018-02-14
IPA60R385CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I=6W"V=L฀T[฀Y R=L"`_#6W"I=฀T[฀Y
E6G6B:I:G฀V@L E6G6B:I:G฀V@L
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R=L"`_#6W"T[฀I=฀฀V@L฀3 I=6W"V@L฀PV=Ll7+lI=lR=L"`_#^Ri
E6G6B:I:G฀T[
eja
฀
0
0.2
0.4
0.6
0.8
1
1.2
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [ ]
฀Y
฀Y
0
4
8
12
16
20
24
28
32
36
40
0 2 4 6 8 10
VGS [V]
ID[A]
฀3
฀3
฀3
฀3
฀3
฀3
฀3
฀3
0
2
4
6
8
10
12
14
16
0 5 10 15 20
VDS [V]
ID[A]
฀3 ฀3 ฀3
฀3
฀3
฀3
0.4
0.8
1.2
1.6
2
2.4
0 5 10 15
ID[A]
RDS(on) [ ]
Rev. 2.3
Page 5
2018-02-14
IPA60R385CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
V@L6W"QXReV฀I=฀฀EJAH:9 I?6W"VL=#
E6G6B:I:G฀V== E6G6B:I:G฀T[
11 Avalanche energy 12 Drain-source breakdown voltage
E9L6W"T[฀I=฀฀V==฀3 V;K"=LL#6W"T[฀I=฀B
฀Y
฀Y
฀Y ฀
฀Y ฀
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF[A]
฀3
฀3
0
2
4
6
8
10
0 5 10 15 20
Qgate [nC]
VGS [V]
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj[°C]
V( BR)DSS [V]
0
50
100
150
200
250
20 60 100 140 180
Tj[°C]
EAS [mJ]
Rev. 2.3
Page 6
2018-02-14
IPA60R385CP
13 Typ. capacitances 14 Typ. Coss stored energy
C6W"V=L฀V@L฀3฀f฀*%O E`dd=W(V =L)
0
1
2
3
4
5
6
0 100 200 300 400 500 600
VDS [V]
Eoss [µJ]
<Zdd
<`dd
<cdd
104
103
102
101
100
) *)) +)) ,)) -)) .))
VDS [V]
C[pF]
Rev. 2.3
Page 7
2018-02-14
IPA60R385CP
Definition of diode switching characteristics
Rev. 2.3
Page 8
2018-02-14
IPA60R385CP
Outline PGTO220 FullPAK
Rev. 2.3
Page 9
2018-02-14
DIMENSIONS MIN. MAX.
A2
H
b
D
c
b2
E
e
L
Q
øP
L1
D1
A
A1
2.86
2.42
2.54
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
3.00
12.78
8.97
29.75
0.90
0.63
1.51
16.15
3.50
3.30
3.45
13.75
10.65
9.83
MILLIMETERS
4.50
2.34
4.90
2.85
b1 0.95 1.38
b4 0.65 1.51
b3 0.65 1.38 1
SCALE
Z8B00003319
REVISION
ISSUE DATE
EUROPEAN PROJECTION
07
27.01.2017
05mm
DOCUMENT NO.
5:1
2 3 4
1 2 3
10
600VCoolMOSªCPPowerTransistor
IPA60R385CP
Rev.2.3,2018-02-22
RevisionHistory
IPA60R385CP
Revision:2018-02-22,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2018-02-22 Outline PG-TO220 FullPAK Update
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.