UNISONIC TECHNOLOGIES CO., LTD
2SC2712 NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R206-029.E
AUDIO FREQUENCY
AMPLIFIER NPN TRANSISTOR
FEATURES
* High Voltage and High Current:
V
CEO=50V, IC=150mA (Max.)
* Excellent hFE Linearity:
h
FE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
* High hFE
* Low Noise
Lead-free: 2SC2712L
Halogen-free:2SC2712G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
2SC2712-x-AE3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R SOT-23 E B C Tape Reel
2SC2712-x-AL3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R SOT-323 E B C Tape Reel
MARKING
2SC2712-Y 2SC2712-G 2SC2712-L
LY L: Lead Free
G: Halogen Free
LG L: Lead Free
G: Halogen Free
LL L: Lead Free
G: Halogen Free
2SC2712 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
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ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 30 mA
Collector Power Dissipation PC 150 mW
Junction Temperature TJ +125 °С
Storage Temperature TSTG -55 ~ +125 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-off Current ICBO V
CB=60V, IE=0 0.1 μA
Emitter Cut-off Current IEBO V
EB=5V, IC=0 0.1 μA
DC Current Gain hFE V
CE=6V, IC=2mA 70 700
Collector-Emitter Saturation Voltage VCE(SAT) I
C=100mA, IB=10mA 0.1 0.25 V
Transistor Frequency fT V
CE=10V, IC=1mA 80 MHz
Collector Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 2.0 3.5 pF
Noise Figure NF VCE=6V, IC=0.1mA
f=1kHz, Rg=10KΩ 1.0 10 dB
CLASSIFICATION OF hFE
RANK Y G L
RANGE 120~240 200~400 350~700
2SC2712 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
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TYPICAL CHARACTERISTICS
Collector Current, IC(mA)
DC Current Gain, hFE
fT-I
C
0.1 0.3 3 10 100 300
10
30
50
100
500
1000
Collector Current, IC(mA)
130
300
Transistion Frequency, fT(MHz)
3000 Common Emitter
VCE=10V
Ta=25°С
IB-V
BE
0 0.2 0.6 1.0 1.2
0.3
3
5
10
300
500
0.4 0.8
100
Transistion Frequency, fT(MHz)
3000
Base-Emitter Voltage, VBE (V)
0.5
1
30
50
1000
Common Emitter
VCE=10V
25°С
-25°С
Ta=100°С
h Parameter, IC
0.1 0.3 3 30
0.1
1
3
10
300
2000
Collector Current, IC(mA)
110
100
0.3
0.5
5
30
50
500
1000
h Parameter
Common Emitter
VCE=12V, f=270Hz, Ta=25°С
BL GR
Y
OY
O
BL
GR
hoe×µS
hie×KΩ
BL GR
Y
O
OYBL GR hre×10-4
h Parameter, VCE
0.5 1 30
0.1
1
3
10
300
2000
Collector-Emitter Voltage, VCE (V)
100
0.3
0.5
5
30
50
500
1000
h Parameter
310 100 300
BL
BL
hre
Common Emitter
IC=2mA, Ta=25°С, f=270Hz BL
GR
Y
O
GR
Y
O
hoe×µS
GR
O
Y
hie×KΩ
hre×10-4 O
Y
BL
GR
2SC2712 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R206-029.E
TYPICAL CHARACTERISTICS(Cont.)
PC -Ta
0 25 50 75 100 125
0
50
100
150
200
250
Ambient Temperature, Ta (°С)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
