© 2015 IXYS CORPORATION, All Rights Reserved DS100649A(6/15)
X2-Class
Power MOSFET
N-Channel Enhancement Mode
IXTY8N65X2
IXTA8N65X2
IXTP8N65X2
VDSS = 650V
ID25 = 8A
RDS(on)
500m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 650 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 125C 150 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 500 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C8A
IDM TC= 25C, Pulse Width Limited by TJM 16 A
IATC= 25C4A
EAS TC= 25C 250 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25C 150 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10.65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220 (IXTP)
D (Tab)
TO-263 (IXTA)
G
TO-252 (IXTY)
G
S
D (Tab)
D (Tab)
S
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY8N65X2 IXTA8N65X2
IXTP8N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 8 A
ISM Repetitive, pulse Width Limited by TJM 32 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 200 ns
QRM 1.65 μC
IRM 16.3 A
IF = 4A, -di/dt = 100A/μs
VR = 100V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 4.8 8.0 S
RGi Gate Input Resistance 6
Ciss 800 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 495 pF
Crss 2.2 pF
Co(er) 43 pF
Co(tr) 129 pF
td(on) 24 ns
tr 28 ns
td(off) 53 ns
tf 24 ns
Qg(on) 12.0 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 3.1 nC
Qgd 4.4 nC
RthJC 0.83 C/W
RthCS TO-220 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
© 2015 IXYS CORPORATION, All Rights Reserved
Fig. 5. R
DS(on)
Normalized to I
D
= 4A Value vs.
Dra in Curr ent
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
024681012141618
I
D
- Amperes
R
DS(on)
- Normalized
VGS
= 10V
TJ = 12 5ºC
TJ = 25ºC
Fig. 6. Maximum Drain Current v s .
Case Temperature
0
1
2
3
4
5
6
7
8
9
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centi gr ade
I
D
- Amperes
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
1
2
3
4
5
6
7
8
0 0.5 1 1.5 2 2.5 3 3.5 4
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
1
2
3
4
5
6
7
8
012345678910
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
7V
4V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 4A Value vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
T
J
- D egr ees Centi grade
R
DS(on)
- Normalized
VGS
= 10V
I D = 8A
I D = 4A
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
2
4
6
8
10
12
14
16
18
0 4 8 12 16 20 24 28 32
V
DS
- Volts
I
D
- A m peres
VGS
= 10V
8V
7V
6V
5V
IXTY8N65X2 IXTA8N65X2
IXTP8N65X2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY8N65X2 IXTA8N65X2
IXTP8N65X2
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
01234567891011
I
D
- A m peres
g
f s - Siemens
T
J
= - 40º C
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10 . Gate Cha rge
0
2
4
6
8
10
024681012
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 4A
I
G
= 10m A
Fig. 7 . Input Admittan c e
0
1
2
3
4
5
6
7
8
9
10
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC - 40ºC
Fig. 11. Capacitanc e
0.1
1
10
100
1000
10000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Output Capacitance Stored Energy
0
1
2
3
4
5
6
7
8
9
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
© 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_8N65X2(X2-R2T5) 6-05-15-A
IXTY8N65X2 IXTA8N65X2
IXTP8N65X2
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
Fig. 14 . Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 13 . Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Singl e Pulse
25µs
1ms
100µs
R
DS(
on
)
Limit
10ms
DC
