Absolute Maximum Ratings, according to IEC publication No. 134
RMS On-state Current (full sine wave)
IT(RMS)
PARAMETER CONDITIONS Value UnitSYMBOL
ITSM
I2t
IGM
PG(AV)
Tj
Tstg
All Conduction Angle, Tc = 80 °C
1000
dI/dt
ITSM
Tsld
260
May - 10
FT4016.P
Peak Gate Current
Non-repetitive On-State Current
Fusing Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Non-repetitive On-State Current
Soldering Temperature 10s max °C
Full Cycle, 60 Hz (t = 16.7 ms)
Full Cycle, 50 Hz (t = 20 ms)
tp = 10 ms, Half Cycle
20 µs max. Tj = 125 °C
Tj = 125 °C
IG = 2x IGT, tr ≤100ns
f = 120 Hz, Tj = 125 °C
8
40
420
400
1
50
(-40 +125)
(-40 +150)
A
A
A
W
A2s
A
A/µs
°C
°C
This series of TRIACs uses a high performance PNPN
technology.
These parts are intended for general purpose AC
switching applications with highly inductive loads. The
FT....P series provides an isolated tab (rated at
2500 Vrms).
INSULATED TO3P
Repetitive Peak Off State Voltage
PARAMETER VOLTAGE Unit
SYMBOL
600
VDRM/VRRM 800
M N
V
13
2T1 (1)
G (3)
_
T2 (2)
INSULATED HIGH COMMUTATION TRIAC
Of f-State Voltage
600 V ÷ 800 V
On-State Current
40 Amp
Gate Trigger Current
≤ 50 mA (16)
* Standard current TRIAC
* Low thermal resistance with clip
bounding
* Low thermal resistance isolation
ceramic for FT....P
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T 40 16 M P 00
FORMING
TU
PACKAGING
PART NUMBER INFORMATION
May - 10
FT4016.P
Electrical Characteristics
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PARAMETER CONDITIONS SENSITIVITY UnitSYMBOL
VD = 12 VDC, RL = 33Ω,
Quadrant
mA
MAX
IGT (1)
Q1÷Q3
Gate Trigger Current
VD = 12 VDC, RL = 33Ω,
Q1÷Q3
VGT Gate Trigger Voltage
VGD Gate Non Trigger Voltage
Off-State Leakage Current
IDRM/IRRM
IH (2)
VD = VDRM,
Tj = 125 °C
Tj = 25 °C
VR = VRRM,
IT =100 mA,Gate open,
VD = VDRM, RL = 3.3 KΩ,
Latching Current IG = 1.2 IGT, Tj = 25 °C
dV/dt (2)
Critical Rate of Voltage Rise
Rth(j-c)
Thermal Resistance
Tj = 125 °C
VD = 0.67 x VDRM, Gate open
for AC 360° conduction angle
Junction-Case
Holding Current
VTM (2) On-state Voltage
ITM = 60 Amp, tp = 380 µs, Tj = 25 °C
IL
°C/W
MAX
MAX
MAX
µA
mA
V
Q2
MIN
V/µs
Q1, Q3
Q1÷Q3
mA
MAX
MAX
MAX
MIN
MAX
mA
mA
V
V
Tj = 125 °C
Tj = 25 °C
Tj = 25 °C
16
50
1.3
0.2
80
80
500
160
1.55
5
20
0.9
Tj = 25 °C
INSULATED HIGH COMMUTATION TRIAC
rd (2)
Dynamic resistance
Vt (o) (2)
Threshold Voltage
Tj = 125 °C
Tj = 125 °C
MAX
MAX
mΩ
V
0.85
10
IT(RMS)(A)
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 3: On-state characteristics (maximum
values)
400 ITM (A)
0.5 1.0 1.5 2.0 2.5 3.0
VTM (V)
3.5 4.0 4.5
tp(ms)
Fig. 1: Maximum power dissipation versus
RMS on-state current (full cycle).
P (W)
IT(RMS)(A)
0
10
20
30
40
50
0
020 3010 0 10025 12550 75
0.01 0.10 1.00 10.00
100
May - 10
FT4016.P
INSULATED HIGH COMMUTATION TRIAC
10
20
30
40
10
1
3000
40
1000
5
15
25
35
45
Tj = 25 °C
Tj max
15 255 35
Tc(°C)
100
5.0
Repetitive
Tc = 70 °C
Number of cycles
Fig. 4: Surge peak on-state current
versus number of cycles
I TSM(A)
Non repetitive
Tj initial = 25 °C
t=20ms
One cycle
110 100 1000
0
50
200
300
150
100
250
350
400
450
Fig. 5: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I2t.
ITSM(A). I2t (A2s)
20 40 60 80
100 120 140
0
0.5
2.0
1.0
1.5
2.5
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25ºC]
Tj(ºC)
-40 -20 0
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
Tj initial = 25 °C
I2t
ITSM
IGT
IH&IL
a =180°
May - 10
FT4016.P
INSULATED HIGH COMMUTATION TRIAC
Mounting Torque 1 N.m
(*) Limiting values and life support applications, see Web page.
PACKAGE MECHANICAL DATA: INSULATED TO3P
A B C D E F G H J K L M N
MAX
TYP
MIN
4.6 1.55 15.6 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40
4.60
4.4 1.45
14.35
0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20
DIMENSIONS (mm)
J
C
A
B
H
N
K
FG
E
J
D
L
M
