PD - 96292 IRFP250MPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET(R) Power MOSFET D VDSS = 200V RDS(on) = 0.075 G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 30 21 120 214 1.4 20 315 30 21 8.6 -55 to +175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.24 --- 0.7 --- 40 C/W 1 03/01/10 IRFP250MPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 200 --- --- 2.0 17 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.26 --- --- --- --- --- --- --- --- --- --- 14 43 41 33 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 2159 315 83 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.075 VGS = 10V, ID = 18A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 18A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 123 ID = 18A 21 nC VDS = 160V 57 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V --- ID = 18A ns --- RG = 3.9 --- RD = 5.5, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 30 showing the A G integral reverse --- --- 120 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 18A, VGS = 0V --- 186 279 ns TJ = 25C, IF = 18A --- 1.3 2.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by ISD 18A, di/dt 374A/s, VDD V(BR)DSS, Starting TJ = 25C, L = 1.9mH Pulse width 300s; duty cycle 2%. max. junction temperature. (See Fig. 11) TJ 175C RG = 25, IAS = 18A. (See Figure 12) 2 www.irf.com IRFP250MPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 1 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 4.5V 1 0.1 0.1 100 I D , Drain-to-Source Current (A) 1000 100 TJ = 175 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 1. Typical Output Characteristics 5.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 0.1 4.0 20s PULSE WIDTH TJ = 175 C 3.5 ID = 30A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP250MPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 4000 Coss = Cds + Cgd 3000 Ciss 2000 Coss 1000 Crss 16 VGS , Gate-to-Source Voltage (V) 5000 0 10 100 V DS= 160V V DS= 100V V DS= 40V 12 8 4 0 1 ID = 18A 1000 0 20 40 60 80 100 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 100 TJ = 175 C 10 TJ = 25 C 1 0.1 0.2 100us 10 1ms V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 1.6 1 TC = 25 C TJ = 175 C Single Pulse 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP250MPbF VGS 30 30 ID , Drain Current (A) ID , Drain Current (A) + V DD - 10V 20 20 Pulse Width 1 s Duty Factor 0.1 % 15 15 Fig 10a. Switching Time Test Circuit 10 10 0 D.U.T. RG 25 25 5 RD V DS 35 35 VDS 90% 5 0 25 25 50 75 100 125 150 50 T 75 125 C) , Case100 Temperature (150 TC C , Case Temperature ( C) 175 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS DRIVER D.U.T RG + - VDD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFP250MPbF 800 ID 7.3A 13A BOTTOM 18A TOP 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFP250MPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP250MPbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) ( 4 $ $ ( $ $ ( ; ' % / $ / 6(( 9,(:% [E [E % $ F E H $ [ /($'7,3 3 % $ $ 6 ' 9,(:% 7+(50$/3$' 3/$7,1* %$6(0(7$/ ( % $ 9,(:$$ F EEE 6(&7,21&&''(( TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 ,5)3( + '$7(&2'( <($5 :((. /,1(+ Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2010 8 www.irf.com