Silicon Bipolar MMIC Active Mixer/IF Amplifier MAMD12008 Features @ 8 dB Conversion Gain from 50 MHz to 5 GHz @ |F Output from DC to 1000 MHz @ Single Positive Supply: 4 to 8V @ 14 mA Termination Insensitive LO Power: -10 to 0 dBm High Isolation RF/IF, Low LO Leakage Low Cost Plastic 8 Lead SOIC Package Description M/A-COMs MAMD12008 is a double balanced active mixer in a low cost surface mount plastic SOIC package. The MAMD12008 is ideally suited for use where very low power consumption is required. Typical applications include frequency down conversion, modulation, demodulation and phase detection in systems such as GPS receivers, fiber optic modules, cordless phones and battery powered radio receivers. The MAMD12008 is based on the Gilbert cell topology. It can operate over a narrow or wide frequency range with RF inputs up to 5 GHz and IF output up to 1 GHz. RF and LO operation can be extended below 50 MHz by adding optional capacitors to ground. The mixer is particularly suitable for applications where insensitivity S0-8 pine AH Lt 1497-1574 2284-2440 Orientation (3.80-4.00) (5.80-6.20) mark pini-H HA .1890-. 1968 .050(1.27) asc-| LL 0532-0688 ; : 4.80-5.0077| - 0099-.0196 x 45 Chamter = "| -(4.35-1.75) (9.25-0.50) po 0-8 0075-0098 + (019-025) rt : 0040-0098 lb 050, / (0.10-0 25) 40-1. ||+013-.020 TYP. (0.33-0.51) {All dimensions per JEDEC No. MS-012-AA, Issue C) Dimensions in ( ) are in mm. 1 IF Output 2 AC Ground; OV 3 AC Ground; 0V 4 RF Input _ Pin Description | 8 RF Ground, Optional | _ 7 Veo I 6 LO Ground, Optional _ 5 LO Input RF to IF CONVERSION GAIN vs. RF FREQUENCY to termination impedance is required. In addition, the al? | fords MAMD12008 provides good spurious. signal = IF = 70MH | | | + . woe . z = Z | i suppression with very low LO power and minimal bias 2 | | | | power consumption. | ry | IF =1 GHz | | The MAMD12008 is fabricated with a monolithic chip 9 | | | | [ \ \ | using a mature, 12 GHz f,silicon bipolar technology. The a 0 + 7 process features full IC passivation for increased 3 mG | I | A \ , | . ape 1 1 performance and reliability. a 5| LOW SIDE LO | TAs 26c | | | Hida Electrical Specifications, T, = 25C " RE FREQUENCY (GHz) Symbol Parameters, Test Conditions: Vcc = 5V, ZO = 509, LO = -5dBm, RF = -20dBm | Units Min. | Typ. | Max. Ge Conversion Gain RF = 2 GHz, LO = 1.75 GHz dB 6 8.5 10 Fsas RF RF Bandwidth (Go 3 dB down) \F = 250 MHz GHz 3.5 Faup IF IF Bandwidth (Gc 3 dB down) ~ LO=2GHz GHz 0.6 IPs ap IF Output at 1 dB Gain Compression RF = 2 GHz, LO = 1.75 GHz dBm -6 IP3 IF Output Third Order Intercept Point RF = 2 GHz. LO = 1.75 GHz dBm +3 NF SSB Noise Figure RF = 2 GHz, LO = 1.75 GHz dB 17 RF Port f = 0.05 to 3.75 GHz 1.54 VSWR LO Port f = 0.05 to 3.75 GHz 2.011 {F Port t<1 GHz 4.5:1 RFAF RF Feedthrough at IF Port RF = 2 GHz, LO = 1.75 GHz dBc -22 LOAF LO Leakage at IF Port LO = 1.75 GHz dBm -23 LO/RF LO Leakage at RF Port LO = 1.75 GHz dBm -25 Icc Supply Current mA 12 14 16 Specifications Subject to Change Without Notice M/A-COM Inc. a 1011 Pawtucket Boulevard, Lowell, MA 01853 USA . Telephone: 800-366-2266 1-200Silicon Bipolar MMIC Active Mixer/IF Amplifier Absolute Maximum Ratings Parameter Absolute Maximum Device Voltage 10V Power Dissipation?.3 300 mW RF Input Power +14 dBm LO Input Power +14 dBm Junction Temperature 150C Storage Temperature -65C to 150C Thermal Resistance : , = 225C/W Notes: 1. Operation outside these timits may result in permanent damage. 2. Tease - Case temperature = 25C (Bottom of the case) 3. Derate at 4.44 mW/C for Tease > 82.5C Typical Performance, T, = 25C,Vcc = 5V, RF: -20 dBm at 2 GHz, LO: -5 dBm at 1.75 GHz (unless otherwise noted) CONVERSION CONVERSION GAIN (dB), Icc (mA) 3 4 5 icc and IF P1dB vs. Vcc P1idB 6 7 8 9 10 SUPPLY VOLTAGE - Vcc (V) RF TO IF CONVERSION GAIN vs. IF FREQUENCY Qo mo CONVERSION GAIN (dB) kh oP A 0.01 LO > RF LO< RF --* LO =2 GHz 0.1 IF FREQUENCY (GHz) CONVERSION GAIN, IP3 and P1dB vs. LO POWER np aad mD o CONVERSION GAIN (dB), IP3(dBm) -15 -12 -9 -6 3 0 3 6 9 12 LO POWER (dBm) Specifications Subject to Change Without Notice P1dB (dBm) Chiac IF outputo| js Ground 0 V3 64 RF inpuro CONVERSION GAIN (dB), Icc(mA a nh Chlock MAMD12008 TYPICAL BIASING CONFIGURATION AND FUNCTIONAL BLOCK DIAGRAM | 2 3 | K is jo 4 1 8 \ Chiock Optional 7 -o-\O Vee = +5V 1 6 So ok Cblock Optional [ 5 LO Input CONVERSION GAIN, IF P1dB and Icc CURRENT vs. CASE TEMPERATURE = Q oO NM FF D @ loc 0 25 55 85 TEMPERATURE (C} RF, LO and IF PORT VSWR vs. FREQUENCY 4 PTT AF LO---- [F om 3 2 ee To ene os lanl 1 0.01 0.4 1 10 RF FREQUENCY (GHz) HARMONIC INTERMODULATION SUPPRESSION (dB BELOW DESIRED OUTPUT) RF - 1 GHz, LO - 0.752 GHz, IF - 0.248 GHz x? - 32] 35] 60 75 | >75 Ww Q 1] 27] o 42| 46{ >75] >75 5 Q 2 15 28 4 65 71] >75 2aja| i7| 40] 66] 75] 375 oO _ - - 4. eee =z 4] 30] 42] 56 65 73} >75 & _ 4. t 5 | 45 36 52 72) >75| >75 0 1 2 3 4 5 HARMONIC RF ORDER M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 1-201 a Telephone: 800-366-2266