ieee FAIRCHILD SEMICONDUCTOR FAIRCHILD Ts A Schiumberger Company ay pe Bj syecez4 ooazaay 2 IRF420-423/IRF820-823 1-37-77 MTP2N45/2N50 N-Channel Power MOSFETs, 3.0 A, 450 V/500 V Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, 8 such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. GY @ Low Rosjion) S @ Vas Rated at +20 V tsoov2er iso0010F @ Silicon Gate for Fast Switching Speeds Ipss: Vos(on) Specified at Elevated Temperature IRF420 IRF620 eR IRF421 IRF821 ugged IRF422 IRF822 @ Low Drive Requirements IRF423 IRF823 @ Ease of Paraileling MTP2N45 MTP2N50 Product Summary Ip at Ip at Part Number Voss Roson) To = 25C Te = 100C Case Style IRF420 500 V 3.0 2 254A 15 A TO-204AA IRF421 450 V 3.0 2 25A 15A IRF422 500 V 40 2 20A 1.0A IRF423 450 V 4.0 2 20A 1.0A IRF820 500 V 3.0 Q 25 A 15 A TO-220AB IRF821 450 V 3.0 2 25 A i5bA IRF822 500 V 40 2 2.0 A 10A IRF823 450 V 40 2 20A 10A MTP2N45 450 V 40 2 3.0 A 20A MTP2N50 500 V 402 3.0A 20A Notes For information concerning connection diagram and package outline, refer to Section 7. 2-127FAIRCHILD SEMICONDUCTOR ay DE Bs4esb74 ooezsis y IRF420-423/IRF820-823 MTP2N45/2N50 T-39-11 Maximum Ratings Rating Rating IRF420/422 IRF421/423 IRF820/822 IRF821/823 Symbol Characteristic MTP2N50 MTP2N45 Unit Voss Drain to Source Voltage! 500 450 Vv Voer Drain to Gate Voltage! 500 450 V Res = 20 k&2 Vas Gate to Source Voltage +20 +20 Vv Ts Tstg | Operating Junction and -55 to +150 -55 to +150 C Storage Temperatures Th Maximum Lead Temperature 275 275 C for Soldering Purposes, 1/8" From Case for 5 s Maximum Thermal Characteristics IRF420-423/ IRF820-823 MTP2N45/2N50 Rac Thermal Resistance, 3.12 1.67 C/W Junction to Case Rasa Thermal Resistance, 30/80 80 C/W Junction to Ambient Pp Total Power Dissipation 40 75 WwW at To = 25C Ip Puised Drain Current? 10 10 A Electrical Characteristics (To = 25C unless otherwise noted) Symbol Characteristic | Min | Max Unit | Test Conditions Off Characteristics Visrjoss | Drain Source Breakdown Voltage! Vv Ves =0 V, Ip = 250 vA IRF420/422/820/822/ 500 MTP2N50 , IRF421/423/821/823/ 450 MTP2N45 Ipss Zero Gate Voltage Drain Current 250 vA Vos = Rated Voss, Vag = 0 V 1000 uA Vos = 0.8 x Rated Vpgs, Ves =0 V, To = 126C less Gate-Body Leakage Current nA Ves = +20 V, Vos =0 V IRF420-423 +100 IRF820-823/MTP2N45/50 +500 2-128 = i? nA net 0 ON |=e ar mA tt Ah OAT AALIOIIASTARm FAIRCHILD SEMICONDUCTOR ay pe Bsyesu74 ooazae 6 IRF420-423/IRF820-823 MTP2N45/2N50 7-39-11 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions On Characteristics Vesith) Gate Threshold Voltage Vv : IRF420-423/IRF820-823 2.0 4.0 Ip = 250 wA, Vos = Vas MTP2N45/MTP2N50 2.0 4.5 Ip = 1.0 mA, Vos = Vas \ Rogton) | Static Drain-Source On-Resistance 2 Veg = 10 V, Ip=1.0 A . IRF420/421/820/821 3.0 IRF 422/423/822/823 4.0 MTP2N45/50 4.0 Vpsien} | Drain-Source On-Voltage i MTP2N45/50 10 Vv Veg =10 Vs Ip = 2.0 A ; Vv Vas = 10 V; Ip=1.0 A i To = 100C Ofe Forward Transconductance 4.0 S (UG) | Vps=10 V, Ip=1.0 A ; Dynamic Characteristics Ciss Input Capacitance 400 pF Vos = 25 V, Ves =0 V Coss Output Capacitance 100 pF f= 1.0 MHz Ciss Reverse Transfer Capacitance 40 pF Switching Characteristics (Tc = 25C, Figures 1, 2) futon) Turn-On Delay Time 40 ns Vpp = 250 V, Ip=1.0 A tr Rise Time 50 ns Res = 0 V, Reen= 60 82 tarot Turn-Off Delay Time 60 ns t Fall Time 60 ns Qg Total Gate Charge 16 nc Veg = 10 V, Ip =3.0 A Vpp = 200 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voliage 1.4 Vv ig =2.5 A; Veg =O V 1.3 Vv Ig =2.0 A; Veg =0 V ter Reverse Recovery Time 600 ns Ig = 2.5 A; dig/dt = 100 A/uS Notes 4. Ty = + 25C to + 150C 2, Pulse width fimited by Ty 3. Switching time measurements performed on LEM TR-58 test equipment. arama 2-129FALRCHILD SEMICONDUCTOR 84 DEB aueqe74 oo27437 af IRF420-423/IRF820-823 MTP2N45/2N50 7 39_// Typical Electrical Characteristics Figure 1 Switching Test Circuit Vin Yoo AL PULSE GENERATOR Vout | Gareasor Typical Performance Curves Figure 3 Output Characteristics Vag=10 9.0 Vv. v G0y5 PULSE TEST wo reaver tp DRAIN CURRENTA 6.0V : 5.5V Qo 4 8 12 16 20 VosDRAIN TO SQUACE VOLTAGE--V PCLOTICE Figure 5 Transfer Characteristics 4.0 | l Vos = 15 / 3.2 T)=25C ; T=125C Al B24 cz cz Pp oO z / Z 16 ec y i y - 0.8 7, 0 | 3 4 5 B 7 8 9 VosGATE TO SOURCE VOLTAGEV PoIiagr Figure 2 Switching Waveforms OUTPUT, Vout INVERTED INPUT, Vin YW FODEOOF Figure 4 Static Drain to Source Resistance vs Drain Current Nog= 10 V Rogjon~STATIC DRAIN TO SOURCE RESISTANCE2 0 1 2 3 4 5 Ip>DRAIN CURRENTA PCIa720F Figure 6 Temperature Variation of Gate to Source Threshold Voltage t 0.9 0.8 0.7 NORMALIZED GATE THRESHOLD VOLTAGE 9 -50 9 50 100 150 T;-JUNCTION TEMPERATUREC PooaeeF 2-130 ot agen7" Ba ROR ZA Cato a ermraaimuasas FAIRCHILD SEMICONDUCTOR ay pe Bj sucan7y 00279148 0 i IRF420-423/IRF820-823 MTP2N45/2N50 T-39-11 Typical Performance Curves (Cont.) Figure 7 Capacitance vs Drain to Source Voltage CCAPACITANCEpF 10" 2 10* : 10 VosDRAIN TO SOURCE VOLTAGEV Figure 9 Forward Biased Safe Operating Area for IRF420-423 and IRF&20-823 101 MAY BE 2 LIMITED BY \)--DRAIN CURRENTA 10-2 101 z . 10? 2 5 107 VogDRAIN TO SOURCE VOLTAGEV Figure 11 Forward Biased Safe Operating Area for MTP2N45/2N50 10 10 REGION MAY BE 6y IpDRAIN CURRENTA to = = 150C tat 102 103 VosORAIN TO SOURCE VOLTAGEV PCrorate Figure 8 Gate to Source Voltage vs Total Gate Charge 20 + / wy 16 J x foo = 200 5 [p=3.0A 9 T=25C w 12 oO cg = o a 8 y/ w | < | 7] La > 0 0 5 10 15 20 25 Q,TOTAL GATE GHARGEnC PC1O76IF Figure 10 Transient Thermal Resistance vs Time for IRF420-423 and IRF8&20-823 10" . RESISTANCE--C/W 3 3 os ye ' ty Zac TAANSIENT THERMAL Duty Factor, 0 5 +. Deurves apply to train a of hesting pulses Tuas, = Te + Pu Zone, 10-7 10-1 40 * 10 * 10? * $0 * 40 tTiMEms Figure 12 Transient Thermal Resistance vs Time for MTP2N45/2N50 10 Pa | } tat Zoe TRANSIENT THERMAL RESISTANCE--C/W 3 3 Duty Fector, O = + 7 D curves apply to tran of heatlng pulses Towa = Te + Pa % Zaye to-1 10-* + 10 + 10" 4 108 16 tTIMEms. PCOSOSIE 2-131