Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 7 1Publication Order Number:
PZT2907AT1/D
PZT2907AT1
Preferred Device
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
•NPN Complement is PZT2222AT1
•The SOT-223 package can be soldered using wave or reflow
•SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die.
•Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
TA = 25°CPD1.5
12 W
mW/°C
Thermal Resistance Junction−to−Ambient
(Note 1) RJA 83.3 °C/W
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
TL260
10 °C
Sec
Operating and Storage Temperature Range TJ, Tstg −65 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 with 1 oz and 713 mm2 of copper area.
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Preferred devices are recommended choices for future use
and best overall value.
SOT−223
CASE 318E
Style 1
MARKING
DIAGRAM
AWW
COLLECTOR
2, 4
1
BASE
3
EMITTER
P2F
P2F = Specific Device Code
A = Assembly Location
WW = Work Week
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
PZT2907AT1 SOT−223 1000 / Tape & Reel
PZT2907AT1G SOT−223
(Pb−Free) 1000 / Tape & Reel
PZT2907AT3 SOT−223 4000 / Tape & Reel
PZT2907AT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −10 Adc, IE = 0) V(BR)CBO −60 − − Vdc
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) V(BR)CEO −60 − − Vdc
Emitter−Base Breakdown Voltage
(IE = −10 Adc, IC = 0) V(BR)EBO −5.0 − − Vdc
Collector−Base Cutoff Current
(VCB = −50 Vdc, IE = 0) ICBO − − −10 nAdc
Collector−Emitter Cutoff Current
(VCE = −30 Vdc, VBE = 0.5 Vdc) ICEX − − −50 nAdc
Base−Emitter Cutoff Current
(VCE = −30 Vdc, VBE = −0.5 Vdc) IBEX − − −50 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
hFE 75
100
100
100
50
−
−
−
−
−
−
−
−
300
−
−
Collector-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = − 500 mAdc, IB = −50 mAdc)
VCE(sat) −
−−
−−0.4
−1.6
Vdc
Base-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat) −
−−
−−1.3
−2.6
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) fT200 − − MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cc− − 8.0 pF
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Ce− − 30 pF
SWITCHING TIMES
Turn-On Time
(V 30 Vd I 150 Ad
ton − − 45 ns
Delay Time (VCC = −30 Vdc, IC = −150 mAdc,
I
B1
= −15 mAdc
)
td− − 10
Rise Time
I
B1 = −
15
mAdc)
tr− − 40
Turn-Off Time
(V 60Vd I 150 Ad
toff − − 100 ns
Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc,
I
B1
= I
B2
= −15 mAdc
)
ts− − 80
Fall Time
I
B1 =
I
B2 = −
15
mAdc)
tf− − 30
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
PZT2907AT1
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3
Figure 1. Delay and Rise
Time Test Circuit Figure 2. Storage and Fall
Time Test Circuit
INPUT
Zo = 50 Ω
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
0
1.0 k
50
−16 V
200 ns
−30 V
200
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns 0
1.0 k
50
−30 V
200 ns
−6.0 V
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V
1.0 k
1N916
INPUT
Zo = 50 Ω
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10 −1000−100−10−1.0−0.1
IC, COLLECTOR CURRENT (mA)
hFE, CURRENT GAIN
TJ = 125°C
TJ = −55°C
TJ = 25°C
Figure 3. DC Current Gain
1000
100
10 −1000−100−10−1.0
VCE = −20 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain Bandwidth Product
fT
, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
−1.0
−0.8
−0.6
−0.4
−0.2
0
VOLTAGE (VOLTS)
−500−200−100
−50−20−10−0.1 −0.2 −0.5 −1.0 −2.0 −5.0
IC, COLLECTOR CURRENT (mA)
Figure 5. “ON” Voltage
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE(sat) @ IC/IB = 10
30
20
10
7.0
5.0
3.0
2.0
−0.1 −0.2 −0.3 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30
REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
CAPACITANCE (pF)
Ceb
Ccb
PZT2907AT1
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4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
H
S
F
A
B
D
G
L
4
123
0.08 (0003)
C
MK
J
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.249 0.263 6.30 6.70
INCHES
B0.130 0.145 3.30 3.70
C0.060 0.068 1.50 1.75
D0.024 0.035 0.60 0.89
F0.115 0.126 2.90 3.20
G0.087 0.094 2.20 2.40
H0.0008 0.0040 0.020 0.100
J0.009 0.014 0.24 0.35
K0.060 0.078 1.50 2.00
L0.033 0.041 0.85 1.05
M0 10 0 10
S0.264 0.287 6.70 7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1.5
0.059
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091 2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5773−3850
PZT2907AT1/D
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