WF4M32-XXX5
August 2011 © 2011 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 9 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
HIP = 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP (Package 402).
G2T = 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square. Designed to fi t JEDEC 68
lead 0.990" CQFJ footprint (Fig. 3) (Package 509)
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Voltage on Any Pin Relative to VSS V
T-2.0 to +7.0 V
Power Dissipation PT8W
Storage Temperature TSTG -65 to +125 °C
Short Circuit Output Current IOS 100 mA
Endurance — write/erase cycles (Mil Temp) 100,000 min. cycles
Data Retention (Mil Temp) 20 years
RECOMMENDED DC OPERATING CONDITIONS
Parameter Symbol Min Typ Max Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Ground VSS 000V
Input High Voltage VIH 2.0 – VCC + 0.5 V
Input Low Voltage VIL -0.5 – +0.8 V
Operating Temperature (Mil.) TA -55 – +125 °C
Operating Temperature (Ind.) TA -40 – +85 °C
DC CHARACTERISTICS – CMOS COMPATIBLE
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter Symbol Conditions
HIP G2T G4T
Min Max Min Max Min Max Unit
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 μA
Output Leakage Current ILOX32 VCC = 5.5, VIN = GND to VCC 10 10 10 μA
VCC Active Current for Read (1) ICC1 CS# = VIL, OE# = VIH, f = 5MHz 320 215 345 mA
VCC Active Current for Program or Erase (2) ICC2 CS# = VIL, OE# = VIH 420 295 445 mA
VCC Standby Current ICC3 VCC = 5.5, CS# = VIH,
f = 5MHz, RESET# = VIH
20 2.0 95 mA
Output Low Voltage VOL IOL = 12.0 mA, VCC = 4.5 0.45 0.45 0.45 V
Output High Voltage VOH IOH = -2.5 mA, VCC = 4.5 0.85 x
VCC
0.85 x
VCC
0.85 x
VCC
V
Low VCC Lock-Out Voltage VLKO 3.2 4.2 3.2 4.2 3.2 4.2 V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent
component (@ 5MHz). The frequency component typically is less than 2mA/MHz, with OE# at
VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions VIL = 0.3V, VIH = VCC - 0.3V
CAPACITANCE
TA = +25°C, VIN = OV, F = 1.0MHz
Parameter Symbol HIP (H2) CQFP (G2T) CQFP(G4T)
OE# capacitance COE 75 75 20
WE# capacitance CWE 75 75 20
CS# capacitance CCS 20 50 20
Data I/O capacitance CI/O 30 30 30
Address input capacitance CAD 75 75 20
This parameter is guaranteed by design but not tested.