BSM 200 GA 120 DN2 IGBT Power Module * Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE BSM 200 GA 120 DN2 BSM 200 GA 120 DN2 S IC Package Ordering Code 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70 1200V 300A SSW SENSE 1 C67070-A2006-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 300 TC = 80 C 200 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 600 TC = 80 C 400 Power dissipation per IGBT W Ptot TC = 25 C 1550 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.08 Diode thermal resistance, chip case RthJCD 0.15 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 8 mA 4.5 5.5 6.5 VGE = 15 V, IC = 200 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 200 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 3 4 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 12 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 200 AC Characteristics Transconductance VCE = 20 V, IC = 200 A Input capacitance 108 nF - 13 - - 2 - - 1 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Rise time - 110 220 - 80 160 - 550 800 - 80 120 tr VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Fall time tf VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Free-Wheel Diode Diode forward voltage V VF IF = 200 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 200 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s, Tj = 125 C Reverse recovery charge - 0.5 C Qrr IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s Tj = 25 C - 12 - Tj = 125 C - 36 - 3 Oct-27-1997 BSM 200 GA 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1600 t = 21.0s p W Ptot A IC 1200 100 s 10 2 1000 800 1 ms 600 10 1 400 10 ms 200 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 320 K/W A IC ZthJC 240 200 10 -1 10 -2 160 D = 0.50 10 -3 0.20 120 0.10 0.05 single pulse 80 0.02 10 -4 0.01 40 0 0 20 40 60 80 100 120 C 160 TC 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-27-1997 BSM 200 GA 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 400 A IC 300 400 A 17V 15V 13V 11V 9V 7V IC 300 250 250 200 200 150 150 100 100 50 50 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 400 A IC 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE 5 Oct-27-1997 BSM 200 GA 120 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 Ciss 800 V 10 1 12 10 Coss 8 10 0 Crss 6 4 2 0 0 200 400 600 800 1000 nC 10 -1 0 1400 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 20 nH ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 2.5 12 ICpulsIC ICsc/IC di/dt = 1000A/s 3000A/s 5000A/s 8 di/dt = 1000A/s 3000A/s 5000A/s 1.5 6 1.0 4 allowed number of short circuit: <1000 time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-27-1997 BSM 200 GA 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 4.7 par.: VCE = 600 V, VGE = 15 V, IC = 200 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tdon tr 10 2 10 2 tf tf 10 1 0 100 200 300 A 10 1 0 500 10 20 30 40 IC 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 4.7 par.: VCE = 600V, VGE = 15 V, IC = 200 A 100 100 Eon Eon mWs E mWs 80 E 80 70 70 60 60 50 50 Eoff 40 40 30 30 20 20 10 10 0 0 100 200 300 A 500 IC 7 0 0 Eoff 10 20 30 40 60 RG Oct-27-1997 BSM 200 GA 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 400 K/W A IF ZthJC 300 10 -1 250 Tj=125C Tj=25C 10 -2 200 D = 0.50 0.20 150 0.10 0.05 10 -3 100 0.02 0.01 50 single pulse 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-27-1997 BSM 200 GA 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-27-1997 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DN2 Anhang C-Serie Appendix C-series Gehause spezifische Werte Housing specific values Modulinduktivitat stray inductance module typ. LsCE 20 nH Gehausemae C-Serie Package outline C-series Appendix C-series Appendix_C-Serie_BSM200GA120DN2.xls 2001-09-20 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. 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