April 2010 Doc ID 5506 Rev 6 1/9
9
STPS30L30C
Low drop power Schottky rectifier
Features
■Very small conduction losses
■Negligible switching losses
■Extremely fast switching
■Low forward voltage drop
■Low thermal resistance
■Avalanche capability specified
Description
This dual center tap Schottky rectifier is suited for
switch mode power supplies and high frequency
DC to DC converters.
Packaged in TO-220AB, D2PAK and I2PAK, this
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
Figure 1. Electrical characteristics (a)
Table 1. Device summary
IF(AV) 2 x 15 A
VRRM 30 V
Tj (max) 150 °C
VF(typ) 0.37 V
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 12 VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
A1
K
A2
TO-220AB
STPS30L30CT
A1
A2
K
K
A1
A2
K
I2PAK
STPS30L30CR
A1
A2
K
D2PAK
STPS30L30CG
I
F
2 x I
O
I
O
I
R
I
AR
V
F(Io)
VTo V
F(2xIo)
V
F
V
I
I
V
V
R
V
RRM
"Reverse"
"Forward"
V
AR
X
X
www.st.com
Characteristics STPS30L30C
2/9 Doc ID 5506 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.24 x IF(AV) + 0.009 x IF2(RMS)
Table 2. Absolute ratings (limiting values per diode)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 30 V
IF(RMS) Forward rms current 30 A
IF(AV) Average forward current δ = 0.5 Tc = 140 °C, Per diode
Per device
15
30 A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, 220 A
IRRM Peak repetitive reverse current tp = 2 µs square, F= 1 kHz square 1 A
IRSM Non repetitive peak reverse current tp = 100 µs square 3 A
PARM(1) Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 5300 W
VARM (2) Maximum repetitive peak avalanche
voltage
tp < 1 µs Tj < 150 °C
IAR < 35 A 45 V
VASM (2) Maximum single pulse peak
avalanche voltage
tp < 1 µs Tj < 150 °C
IAR < 35 A 45 V
Tstg Storage temperature range -65 to + 175 °C
TjMaximum operating junction temperature (3) 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
--------------- 1
Rth j a–()
--------------------------
<
Table 3. Thermal resistance(1)
Symbol Parameter Value Unit
Rth(j-c) Junction to case Per diode
To t a l
1.5
0.8 °C/W
Rth(c) Coupling 0.1
1. When the diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
IR(1) Reverse leakage current Tj = 25 °C VR = VRRM 1.5 mA
Tj = 125 °C 170 350 mA
VF(1) Forward voltage drop
Tj = 25 °C IF = 15 A 0.46
V
Tj = 125 °C 0.33 0.37
Tj = 25 °C IF = 30A 0.57
Tj = 125 °C 0.43 0.5
1. Pulse test: tp = 380 µs, δ < 2%
STPS30L30C Characteristics
Doc ID 5506 Rev 6 3/9
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
Figure 3. Average forward current per diode
versus ambient temperature
(δ = 0.5)
0 2 4 6 8 101214161820
0
1
2
3
4
5
6
7
8
9
10
IF(av) (A)
PF(av)(W)
T
δ=tp/T tp
δ= 1
δ= 0.5
δ= 0.2
δ= 0.1
δ= 0.05
0 25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
IF
(
av
)(
A
)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
T
δ=tp/T tp Tamb(°C)
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
0.001
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(T)
P (25°C)
ARM j
ARM
Figure 6. Non repetitive surge peak forward
current versus overload duration,
(maximum values per diode)
Figure 7. Relative variation of thermal
impedance junction to case
versus pulse duration
1E-3 1E-2 1E-1 1E+0
0
25
50
75
100
125
150
175
200
225
250
IM(A)
Tc=25°C
Tc=110°C
Tc=75°C
t(s)
IM
t
δ=0.5
1E-4 1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ=tp/T tp
Single pulse
δ= 0.5
δ= 0.2
δ= 0.1
Characteristics STPS30L30C
4/9 Doc ID 5506 Rev 6
Figure 12. Reverse safe operating area (tp < 1 µs and Tj < 150 °C)
Figure 8. Reverse leakage current versus
reverse voltage applied (typical
values per diode)
Figure 9. Junction capacitance versus
reverse voltage applied
(typical values per diode)
0 5 10 15 20 25 30
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
VR(V)
IR(mA)
Tj=125°C
Tj=25°C
Tj=150°C
12 51020 50
0.1
1.0
5.0
VR(V)
C(nF)
F=1MHz
Tj=25°C
Figure 10. Forward voltage drop versus
forward current (maximum values
per diode)
Figure 11. Thermal resistance junction to
ambient versus copper surface
under tab
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
200
VFM(V)
IFM(A)
Tj=15 0 °C
(typical values)
Tj=12 5 °C
Tj=25 °C
0 4 8 12 16 20 24 28 32 36 40
0
10
20
30
40
50
60
70
80
S(Cu) (cm²)
Rth(j-a) (°C/W)
Epoxy printed circuit board, D2PA K
copper thickness = 35 µm
20
25
30
35
40
45
50
55
30 35 40 45 50 55 60
Forbidden area
Operating area
Varm (V)
Iarm (A)
STPS30L30C Package information
Doc ID 5506 Rev 6 5/9
2 Package information
●Epoxy meets UL94, V0
●Cooling method: by conduction (C)
●Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 5. TO-220AB dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
Package information STPS30L30C
6/9 Doc ID 5506 Rev 6
Mounting (soldering) the I2PAK metal slug (heatsink) with alloy, like a surface mount device,
IS NOT PERMITTED. A standard through-hole mounting is mandatory.
Table 6. I2PAK dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.035
b1 1.14 1.70 0.044 0.067
c 0.49 0.70 0.019 0.028
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.195 0.203
E 10 10.40 0.394 0.409
L 13 14 0.512 0.551
L1 3.50 3.93 0.138 0.155
L2 1.27 1.40 0.050 0.055
E
L2
L1
b1
D
A1
c
c2
A
b
e
e1
L
STPS30L30C Package information
Doc ID 5506 Rev 6 7/9
Figure 13. D2PAK footprint (dimensions in mm)
Table 7. D2PAK dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
G
L
L3
L2
B
B2
E
* FLAT ZONE NO LESS THAN 2mm
A
C2
D
R
A2
M
V2
C
A1
*
16.90
10.30
8.90 3.70
5.08
1.30
Ordering information STPS30L30C
8/9 Doc ID 5506 Rev 6
3 Ordering information
4 Revision history
Table 8. Ordering information
Order code Marking Package Weight Base qty Delivery mode
STPS30L30CT STPS30L30CT TO-220AB 2.0 g 50 Tube
STPS30L30CG STPS30L30CR D2PAK 1.8 g 50 Tube
STPS30L30CG-TR STPS30L30CG D2PAK 1.8 g 1000 Tape and reel
STPS30L30CG-TR STPS30L30CG I2PAK 1.49 g 50 Tube
Table 9. Document revision history
Date Revision Changes
Jul-2003 5C Previous issue
29-Apr-2010 6 Added Figure 1 and Figure 12. Added parameters VARM and VASM
to Ta bl e 2.
STPS30L30C
Doc ID 5506 Rev 6 9/9
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