DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.1 0.1 0.3 +0.1 -0 2.5-V power source. The 2SK2858 has excellent switching characteristics, and is suitable for 1.25 0.1 1 0.3 +0.1 -0 * Can be driven by a 2.5-V power source 0.65 FEATURES 2 0.65 2.0 0.2 use as a high-speed switching device in digital circuits. 3 0.3 * Low gate cut-off voltage SC-70(SSP) 0.15 +0.1 -0.05 PACKAGE 2SK2858 0 to 1.1 PART NUMBER 0.9 0.1 ORDERING INFORMATION Marking ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID(DC) 0.1 A ID(pulse) 0.4 A Total Power Dissipation PT 150 mW Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Drain Current (pulse) Note Note PW 10 s, Duty Cycle 1 % Remark EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Electrode Connection 1.Source Internal 2.Gate Diode 3.Drain Source Marking: G24 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11706EJ2V0DS00 (2nd edition) Date Published August 1999 NS CP(K) Printed in Japan The mark shows major revised points. (c) 1996, 1999 2SK2858 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = 30 V, VGS = 0 V 1 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A 1.8 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = 3 V, ID = 10 A 1.0 | yfs | VDS = 3 V, ID = 10 m A 20 RDS(on)1 VGS = 2.5 V, ID = 1 m A 8 15 RDS(on)2 VGS = 4 V, ID = 10 mA 4 8 RDS(on)3 VGS = 10 V, ID = 10 mA 3 5 1.4 mS Input Capacitance Ciss VDS = 3 V 9 pF Output Capacitance Coss VGS = 0 V 12 pF Reverse Transfer Capacitance Crss f = 1 MHz 2.1 pF Turn-on Delay Time td(on) VDD = 3 V 40 ns tr ID = 10 mA 55 ns td(off) VGS(on) = 4 V 68 ns RG = 10 , RL = 300 64 ns Rise Time Turn-off Delay Time Fall Time 2 tf Data Sheet D11706EJ2V0DS00 2SK2858 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 80 ID - Drain Current - mA dT - Derating Factor - % 100 60 40 20 VGS = 4 V 300 3.5 V 200 3V 100 2.5 V 30 60 120 90 TA - Ambient Temperature - C 0 0 150 2 TA = 125C 75C 25C -25C 0.00001 RDS(on) - Drain to Source On-state Resistance - 0.000001 1.0 4.0 2.0 3.0 VGS - Gate to Sorce Voltage - V 5.0 VGS = 2.5 V 15 5 10 0.0001 0.001 0.01 ID - Drain Current - A 0.1 100 TA = -25C 25C 75C 125C 10 0.001 0.01 0.1 1 ID - Drain Current - A 20 TA = 125C 75C 25C -25C VDS = 3 V 1 0.0001 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 | yfs | - Forward Transfer Admittance - mS 0.01 RDS(on) - Drain to Source On-state Resistance - ID - Drain Current - A 0.1 0.0001 10 1000 VDS = 3 V 0.001 8 FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT TRANSFER CHARACTERISTICS 1 6 4 VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 VGS = 4 V 10 5 0 0.0001 Data Sheet D11706EJ2V0DS00 TA = 125C 75C 25C -25C 0.001 0.01 0.1 ID - Drain Current - A 1 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 VGS = 10 V 8 6 TA = 125C 75C 25C -25C 4 2 0 0.0001 0.1 0.001 0.01 ID - Drain Current - A 1 RDS (on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - 2SK2858 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 ID = 1 mA 20 10 0 10 Ciss Coss 1 Crss 0.1 1 10 100 tf td(on) td(off) VDD = 3 V VGS(on) = 4V RG = 10 10 0.1 IF - Source to Drain Current - A 0.1 0.01 0.001 0.6 0.8 1 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 1.2 1.0 VF(S-D) - Source to Drain Voltage - V 4 20 tr 100 VDS - Drain to Source Voltage - V 0.0001 0.4 16 SWITCHING CHARACTERISTICS f = 1 MHz VGS = 0 V 0.1 0.01 12 8 1000 td(on), tr, td(off), tf - Swwitchig Time - ns Ciss, Coss, Crss - Capacitance - pF 4 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 10 mA 100 mA Data Sheet D11706EJ2V0DS00 10 2SK2858 [MEMO] Data Sheet D11706EJ2V0DS00 5 2SK2858 [MEMO] 6 Data Sheet D11706EJ2V0DS00 2SK2858 [MEMO] Data Sheet D11706EJ2V0DS00 7 2SK2858 * The information in this document is subject to change without notice. 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