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© 1996, 1999
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D11706EJ2V0DS00 (2nd edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The mar k ★
★★
★ shows major revised points.
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
•Can be driven by a 2.5-V power source
•Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK2858 SC-70(SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±0.1 A
Drain Current (pulse) Note ID(pulse) ±0.4 A
Total Power Dissipation PT150 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
2.1 ± 0.1
1.25 ± 0.1
0.65
0.3
0.65
2.0 ± 0.2
0.9 ± 0.1
0 to 1.1
0.15+0.1
–0.05
2
13
+0.1
–0
0.3
+0.1
–0
0.3
Marking
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Marking: G24
Gate
Drain Electrode
Connection
1.Source
2.Gate
3.Drain
★
Data Sheet D11706EJ2V0DS00
2
2SK2858
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERIST ICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current I DSS VDS = 30 V, VGS = 0 V1
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 3 V, ID = 10
µ
A 1.0 1.4 1.8 V
Forward Transfer Adm i ttance | yfs |V
DS = 3 V, ID = 10 m A20mS
R
DS(on)1 VGS = 2.5 V, ID = 1 m A815
Ω
R
DS(on)2 VGS = 4 V, ID = 10 mA 4 8 Ω
Drain to Sourc e On-state Resist anc e
RDS(on)3 VGS = 10 V, ID = 10 mA 3 5 Ω
Input Capaci tance Ciss VDS = 3 V9pF
Output Capaci tance Coss VGS = 0 V12pF
Reverse Transf er Capac i tance Crss f = 1 MHz 2.1 pF
Turn-on Delay Time td(on) VDD = 3 V40ns
Rise Time trID = 10 mA 55 ns
Turn-off Del ay T ime td(off) VGS(on) = 4 V68ns
Fall Time tfRG = 10 Ω, RL = 300 Ω64 ns
Data Sheet D11706EJ2V0DS00 3
2SK2858
TYPICAL CHARACTERISTICS (TA = 25 °C)
30 150
60 90
20
0
60
80
40
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
T
A
- Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - mA
2810
46
200
100
0
400
300
2.5 V
3 V
3.5 V
V
GS
= 4 V
1.0
2.0
3.0
1
0.1
0.01
0.001
0.0001
0.00001
0.000001 4.0 5.0
V
GS
- Gate to Sorce Voltage - V
T
A
= 125˚C
75˚C
25˚C
−25˚C
V
DS
= 3 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
1
1
10
100
1000
0.01 0.10.0010.0001
V
DS
= 3 V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - mS
T
A
= −25
˚C
25˚C
75˚C
125˚C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.0001 0.001 0.1
0.01
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
10
15
10
20
5
V
GS
= 2.5 V
T
A
= 125
˚C
25
˚C
75
˚C
−25
˚C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.010.001
0.0001 0.1 1
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
0
5
10
15
V
GS
= 4 V
T
A
= 125
˚C
75
˚C
25
˚C
−25
˚C
★
★
Data Sheet D11706EJ2V0DS00
4
2SK2858
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10.1
0.010.0010.0001 I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
0
2
8
4
6
10
V
GS
= 10 V
T
A
= 125˚C
75˚C
25˚C
−25˚C
0
10
20
30
48
12 16 20
R
DS (on)
- Drain to Source On-state Resistance - Ω
V
GS
- Gate to Source Voltage - V
I
D
= 1 mA
10 mA
100 mA
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1100.01 0.1 100
10
100
1
0.1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
DS
- Drain to Source Voltage - V
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
0.1 1 10
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
1000 SWITCHING CHARACTERISTICS
V
DD
= 3 V
V
GS(on)
= 4V
R
G
= 10 Ω
100
10
t
d(off)
t
d(on)
t
f
t
r
0.0001
0.001
0.01
1
0.1
0.60.4 0.8 1.0 1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
★
★
Data Sheet D11706EJ2V0DS00 5
2SK2858
[MEMO]
Data Sheet D11706EJ2V0DS00
6
2SK2858
[MEMO]
Data Sheet D11706EJ2V0DS00 7
2SK2858
[MEMO]
2SK2858
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confirm that this is the latest version.
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
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M7 98. 8
