© 2009 IXYS CORPORATION, All Rights Reserved DS99358G(07/09)
VDSS = 500V
ID25 = 22A
RDS(on) ≤≤
≤≤
≤ 270mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C22A
IDM TC= 25°C, Pulse Width Limited by TJM 50 A
IATC= 25°C22A
EAS TC= 25°C 750 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 10 V/ns
PDTC= 25°C 350 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS 220) 11..65/2.5..14.6 N/lb.
Weight TO-247 6 g
PLUS 220 types 4 g
IXFV22N50P
IXFV22N50PS
IXFH22N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 2.5mA 3.0 5.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS= 0V 15 μA
TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 270 mΩ
PolarTM Power MOSFET
HiPerFETTM
G
SD (TAB)
PLUS220SMD (IXFV_S)
PLUS220 (IXFV)
GDS
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
TO-247 (IXFH)
D (TAB)
Features
zInternational Standard Packages
zAvalanche Rated
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFV22N50PS IXFV22N50P
IXFH22N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 12 20 S
Ciss 2880 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 310 pF
Crss 29 pF
td(on) 22 ns
tr 25 ns
td(off) 72 ns
tf 21 ns
Qg(on) 50 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 nC
Qgd 18 nC
RthJC 0.35 °C/W
RthCS (TO-247 & PLUS220) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 22 A
ISM Repetitive, Pulse Width Limited by TJM 88 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 200 ns
QRM 0.7 μC
IRM 7.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 22A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
L
L3
L2
L1
A1
E1
e
D1
E
b
D
c
A2
A
A3
L4
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
E
E1
D
L2 A
A1
L1
L
L3
e2X b c
A2
L4
A3
E1
PLUS220SMD (IXFV_S) Outline
D1
L
L3
L1
E1
e
E
b
D
c
A2
A1
A
L2
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
E1
EL2
D
L3
L
L1
3X b
2X e cA2
A1AE1
D1
PLUS220 (IXFV) Outline
© 2009 IXYS CORPORATION, All Rights Reserved
IXFV22N50PS IXFV22N50P
IXFH22N50P
Fig. 1. Output Characteristics
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
22
01234567
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
8V
7V
5
V
6
V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amper es
V
GS
= 10V
8V
7
V
6
V
5
V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
22
02468101214
V
DS
- V o lts
I
D
- Amperes
V
GS
= 10V
7V
5
V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 11A Value
vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 22A
I
D
= 11A
Fig. 5. R
DS(on)
Normalized to I
D
= 11A Value
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 5 10 15 20 25 30 35 40 45 50 55
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximu m Drain Current vs.
Case Temper atu r e
0
4
8
12
16
20
24
-50 -25 0 25 50 75 100 125 150
T
C
- Deg r ees Ce nti grade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFV22N50PS IXFV22N50P
IXFH22N50P
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- V olts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fi g . 8. T r an sco n ductance
0
5
10
15
20
25
30
35
40
0 4 8 12162024283236
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltag e Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- V olts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCo ulomb s
V
GS
- Volts
V
DS
= 250V
I
D
= 11A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig . 12. F o rwar d -Bi as Safe Operatin g Area
0.1
1.0
10.0
100.0
10 100 1000
V
DS
- V olts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC 100ms
© 2009 IXYS CORPORATION, All Rights Reserved
IXFV22N50PS IXFV22N50P
IXFH22N50P
IXYS REF: F_22N50P(63)07-22-09-B
Fi g . 13. Maximum Tran si ent Th er mal I mp ed an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
