1
Motorola Bipolar Power Transistor Device Data
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
•Total Harmonic Distortion Characterized
•High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
•Excellent Gain Linearity
•High SOA: 3 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 250 Vdc
Collector–Base Voltage VCBO 400 Vdc
Emitter–Base Voltage VEBO 5Vdc
Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc
Collector Current — Continuous
Collector Current — Peak (1) IC16
30 Adc
Base Current — Continuous IB5 Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°CPD250
1.43 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –
āā
65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.7 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining V oltage
(IC = 100 mAdc, IB = 0) VCEO(sus) 250 — — Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0) ICEO — — 100 µAdc
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤10%. (continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA Order this document
by MJ21195/D
Motorola, Inc. 1998
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
REV 1
2 Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0) IEBO — — 100 µAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX — — 100 µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b 5
2.5 —
——
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, VCE = 5 Vdc)
hFE 25
8—
—
75
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc) VBE(on) — — 2.2 Vdc
Collector–Emitter Saturation V oltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat) —
——
—1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V) hFE
matched
THD
—
—
0.8
0.08
—
—
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) fT4 — — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob — — 500 pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2%
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product Figure 2. Typical Current Gain
Bandwidth Product
f , CURRENT BANDWIDTH PRODUCT (MHz)
T
PNP MJ21195
f , CURRENT BANDWIDTH PRODUCT (MHz)
T
NPN MJ21196
IC, COLLECTOR CURRENT (AMPS)
0.1 1.0 10
6.5
6.0
5.0
4.0
3.0
2.0
1.0
0
7.5
7.0
6.0
4.0
3.0
5.0
1.0
2.0
0.1 1.0 10
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
VCE = 5 V
10 V
TJ = 25
°
C
ftest = 1 MHz
6.5
4.5
3.5
5.5
1.5
2.5
5.5
4.5
3.5
2.5
1.5
0.5
3
Motorola Bipolar Power Transistor Device Data
IB = 2 A
Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V
hFE , DC CURRENT GAIN
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
IC, COLLECTOR CURRENT (A)
PNP MJ21195 NPN MJ21196
hFE , DC CURRENT GAIN
TYPICAL CHARACTERISTICS
PNP MJ21195
PNP MJ21195
NPN MJ21196
NPN MJ21196
1000
100
10 100101.00.1
TJ = 100
°
C25
°
C
–25
°
C
VCE = 20 V
1000
100
10 100101.00.1
TJ = 100
°
C25
°
C
–25
°
C
VCE = 20 V
1000
100
10 100101.00.1
1000
100
10 100101.00.1
30
25
20
15
10
5.0
05.0010152025
30
25
20
15
10
05.0010152025
5.0
1.5 A
1 A
0.5 A
IB = 2 A
TJ = 25
°
C
TJ = 100
°
C25
°
C
–25
°
C
VCE = 5 V
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 5 V
1.5 A
1 A
0.5 A
TJ = 25
°
C
4 Motorola Bipolar Power Transistor Device Data
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SATURATION VOLT AGE (VOLTS)
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SATURATION VOLT AGE (VOLTS)
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VBE(on), BASE–EMITTER VOLTAGE (VOLTS)
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VBE(on), BASE–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJ21195 NPN MJ21196
TYPICAL CHARACTERISTICS
PNP MJ21195 NPN MJ21196
3.0
2.5
2.0
1.5
1.0
0.5
0100101.00.1
1.6
1.2
1.0
0.8
0.6
0.4
0100101.00.1
0.2
10
1.0
0.1 100101.00.1
10
1.0
0.1 100101.00.1
100
10
1.0
0.1 100101.0 1000
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
1.4 TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
°
C
10 ms
50 ms
250 ms
1 sec
5
Motorola Bipolar Power Transistor Device Data
Figure 14. MJ21195 Typical Capacitance
VR, REVERSE VOLT AGE (VOLTS)
C, CAPACITANCE (pF)
Figure 15. MJ21196 Typical Capacitance
VR, REVERSE VOLT AGE (VOLTS)
C, CAPACITANCE (pF)
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER 50
Ω
0.5
Ω
0.5
Ω
8.0
Ω
–50 V
DUT
DUT
+50 V
Figure 16. Typical Total Harmonic Distortion
Figure 17. Total Harmonic Distortion Test Circuit
FREQUENCY (Hz)
THD, T OTAL HARMONIC
DISTOR TION (%)
10000
1000
100 100101.00.1
10000
1000
100 100101.00.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6 10000010000100010010
TJ = 25
°
C
ftest = 1 MHz
Cib
Cob
TJ = 25
°
C
ftest = 1 MHz
Cib
Cob
6 Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B––– 1.050 ––– 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N––– 0.830 ––– 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T–
SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MJ21195/D
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