JFET - General Purpose
Transistor
P–Channel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage VDG 40 Vdc
Reverse Gate–Source Voltage VGSR 40 Vdc
Forward Gate Current IGF 10 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient RJA 556 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
MMBF5460LT1 = 6E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) V(BR)GSS 40 — — Vdc
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
IGSS —
——
—5.0
1.0 nAdc
µAdc
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc) VGS(off) 0.75 — 6.0 Vdc
Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) VGS 0.5 — 4.0 Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS –1.0 — –5.0 mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 — 4000 µmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| — — 75 µmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.0 7.0 pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.0 2.0 pF
1. FR–5 = 1.0 0.75 0.062 in.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1 521 Publication Order Number:
MMBF5460LT1/D
MMBF5460LT1
12
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
MMBF5460LT1
http://onsemi.com
522
Yfs FORWARD TRANSFER ADMITTANCE ( mhos)Yfs FORWARD TRANSFER ADMITTANCE ( mhos)
DRAIN CURRENT versus GATE
SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
ID, DRAIN CURRENT (mA)
Yfs FORWARD TRANSFER ADMITTANCE ( mhos)
4.0 4000
0 0.2
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 1. VGS(off) = 2.0 Volts
1.0
ID, DRAIN CURRENT (mA)
3.5
ID, DRAIN CURRENT (mA)
10 10000
0 1.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 2. VGS(off) = 4.0 Volts
ID, DRAIN CURRENT (mA)
ID, DRAIN CURRENT (mA)
16 10000
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 3. VGS(off) = 5.0 Volts
ID, DRAIN CURRENT (mA)
Figure 4. VGS(off) = 2.0 Volts
Figure 5. VGS(off) = 4.0 Volts
Figure 6. VGS(off) = 5.0 Volts
3.0
2.5
2.0
1.5
1.0
0.5
00.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS = 15 V
200
300
500
700
1000
2000
3000
0.2 0.3 0.5 0.7 2.0 3.0 4.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
00.5 1.5 2.0 2.5 3.0 3.5 4.0 500
700
1000
2000
3000
5000
7000
0.5 0.7 1.0 2.0 3.0 5.0 7.0
14
12
10
8.0
6.0
4.0
2.0
01.0 2.0 3.0 8.04.0 5.0 6.0 7.0 500
700
1000
2000
3000
5000
7000
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
TA = -55°C
25°C
125°C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
TA = -55°C
25°C
125°C
VDS = 15 V
TA = -55°C
25°C
125°C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
f = 1.0 kHz
MMBF5460LT1
http://onsemi.com
523
1000
0.1 0.2
ID, DRAIN CURRENT (mA)
Figure 7. Output Resistance
versus Drain Current
10 0.5 1.0 2.0 5.0 10
ross, OUTPUT RESISTANCE (k ohms)
C, CAPACITANCE (pF)
10
0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance versus
Drain–Source Voltage
0
NF, NOISE FIGURE (dB)
10
RS, SOURCE RESISTANCE (k Ohms)
Figure 9. Noise Figure versus
Source Resistance
0
Figure 10. Equivalent Low Frequency Circuit
20
30
50
70
100
200
300
500
700
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10 20 30 40
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0 10 100 1000 10,000
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data i s given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
vi
Crss
Ciss ross Coss | yfs | vi
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
yis = jω Ciss
yos = jω Cosp * + 1/ross
yfs = yfs |
yrs = -jω Crss
VDS = 15 V
f = 1.0 kHz
IDSS = 3.0 mA
6.0 mA
10 mA
f = 1.0 MHz
VGS = 0
Ciss
Coss
Crss
VDS = 15 V
VGS = 0
f = 100 Hz
