1 Publication Order Number :
2SB1216_2SD1816/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 2
2SB1216, 2SD1816
Bipolar Transistor
()100V, ()4A, Low VCE(sat),
(PNP)NPN Single
Features
Low Collector to Emitter Saturation Voltage
Small and Slim Package Facilitating Compactness of Sets
High fT
Good Linearity of hFE
Fast Switching Time
Typical Applications
Suitable for Relay Drivers
High Speed Inverters
Converters
Other General High Current Switching Applications
SPECIFICATIONS ( ) : 2SB1216
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter Symbol Value Unit
Collector to Base Voltage VCBO () 120 V
Collector to Emitter Voltage VCEO () 100 V
Emitter to Base Voltage VEBO () 6 V
Collector Current IC () 4 A
Collector Current (Pulse) ICP () 8 A
Collector Dissipation PC 1W
Tc=25°C 20 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg 55 to +150 °C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ELECTRICAL CONNECTION
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 7 of this data sheet.
2,
4
3
1
2SD1816
2,
4
3
1
2S
B
1
2
1
6
1:Base
2 : Collector
3:Emitter
4 : Collector
B1216 D1816
LOT No.
RANK
LOT No.
RANK
IPAK / TP
123
4
DPAK / TP-FA
4
12
3
2SB1216, 2SD1816
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter Symbol Conditions Value Unit
min typ max
Collector Cutoff Current ICBO V
CB=()100V, IE=0A ()1 μA
Emitter Cutoff Current IEBO V
EB=()4V, IC=0A ()1 μA
DC Current Gain hFE1 VCE=()5V, IC=()0.5A 140* 400*
hFE2 VCE=()5V,IC=()3A 40
Gain-Bandwidth Product fT V
CE=()10V, IC=()0.5A (130) 180 MHz
Output Capacitance Cob VCB=()10V, f=1MHz (65) 40 pF
Collector to Emitter Saturation
Voltage VCE(sat) IC=()2A, IB=()0.2A (200) 150 (500) 400 mV
Base to Emitter Saturation Voltage VBE(sat) IC=()2A, IB=()0.2A () 0.9 () 1.2 V
Collector to Base Breakdown
Voltage V(BR)CBO I
C=()10μA, IE=0A ()120 V
Collector to Emitter Breakdown
Voltage V(BR)CEO I
C=()1mA, RBE= ()100 V
Emitter to Base Breakdown Voltage V
(
BR
)
EBO I
E=()10μA, IC=0A () 6 V
Turn-On Time ton
See specified Test
Circuit
100 ns
Storage Time tst
g
(800) 900 ns
Fall Time tf 50 ns
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows:
Rank S T
hFE 140 to 280 200 to 400
Fig.1 Switching Time Test Circuit
2SB1216, 2SD1816
www.onsemi.com
3
2SB1216, 2SD1816
www.onsemi.com
4
2SB1216, 2SD1816
www.onsemi.com
5
PACKAGE DIMENSIONS
unit : mm
1 : Base
2 : Collector
3 : Emitter
4 : Collector
IPAK / TP
CASE 369AJ
ISSUE O
2SB1216, 2SD1816
www.onsemi.com
6
PACKAGE DIMENSIONS
unit : mm
1 : Base
2 : Collector
3 : Emitter
4 : Collector
7.0
1.5
2.3
2.02.5
2.3
7.0
DPAK / TP-FA
CASE 369AH
ISSUE O
Recommended
Soldering Footprint
2SB1216, 2SD1816
www.onsemi.com
7
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject toall
applicable copyright laws and is not for resale in any manner.
ORDERING INFORMATION
Device Marking Package Shipping (Qty / Packing)
2SB1216S-E B1216
IPAK / TP
(Pb-Free)
500/ bag
2SB1216T-E B1216
2SD1816S-E D1816
2SD1816T-E D1816
2SB1216S-H B1216
IPAK / TP
(Pb-Free / Halogen Free)
2SB1216T-H B1216
2SD1816S-H D1816
2SD1816T-H D1816
2SB1216S-TL-E B1216
DPAK / TP-FA
(Pb-Free)
700/ Tape & Reel
2SB1216T-TL-E B1216
2SD1816S-TL-E D1816
2SD1816T-TL-E D1816
2SB1216S-TL-H B1216
DPAK / TP-FA
(Pb-Free / Halogen Free)
2SB1216T-TL-H B1216
2SD1816S-TL-H D1816
2SD1816T-TL-H D1816
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF