© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 4
1Publication Order Number:
MJD5731/D
MJD5731
High Voltage PNP Silicon
Power Transistors
Designed for line operated audio output amplifier,
SWITCHMODEt power supply drivers and other switching
applications.
Features
•350 V (Min) − VCEO(sus)
•1.0 A Rated Collector Current
•PNP Complements to the MJD47 thru MJD50 Series
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
•These are Pb−Free Packages
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 350 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current − Continuous
− Peak
IC1.0
3.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD15
0.12
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD1.56
0.0125
W
W/°C
Unclamped Inductive Load Energy
(See Figure 10)
E 20 mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.33 °C/W
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA 80 °C/W
Lead Temperature for Soldering TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
1.0 AMPERE
350 VOLTS, 15 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
J5731 = Device Code
G = Pb−Free Package
12
3
4
AYWW
J
5731G
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MJD5731T4G DPAK
(Pb−Free)
2500/Tape & Reel
MJD5731
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
350
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 250 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ICEO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.1
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICES
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.01
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
30
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
175
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 10 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
hfe
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
0.03
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
2.0
0.02 0.03 0.05 0.1 0.2 0.5 1.0 2.0
30
10
3.0
Figure 2. Collector−Emitter Saturation Voltage
0.02
IC, COLLECTOR CURRENT (AMPS)
0
0.05 0.3
1.2
hFE, DC CURRENT GAIN
5.0
VCE = 10 V
1.0 2.0
1.4
1
TJ = 150°C
20
0.50.3
0.8
0.6
0.1
VCE(sat)) @ IC/IB = 5.0
0.2
0.2
0.4
25°C
-55°C
100
50
200
150°C
-55°C
MJD5731
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3
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
V, VOLTAGE (V)
1.4
1.2
0.4
0
0.6
0.2
Figure 3. Base−Emitter Voltage
0.05 0.2 2.00.1 0.50.3 1.00.02 0.03
VBE(sat) @ IC/IB = 5.0
TJ = - 55°C
25°C
150°C
0.02
IC, COLLECTOR CURRENT (AMPS)
1
0.8
V, VOLTAGE (VOLTS)
1.4
1.2
0.4
0
0.6
0.2
VBE(sat) @ IC/IB = 5 V
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 5 V
Figure 4. “On” Voltages
0.06 0.2 20.1 0.6
0.04 0.4 1
TJ = 25°C
10
5.0
Figure 5. Forward Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
0.5
0.01
30 100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
IC, COLLECTOR CURRENT (AMP)
dc 500 ms
0.05
10 20
1.0ms
200 300 500
1.0
0.2
50
0.1
0.02
TC = 25°C
100 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t), TRANSIENT THERMAL
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
RESISTANCE (NORMALIZED)
0.7
Figure 6. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.02
0.01
MJD5731
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4
t2
Figure 7. Switching Time Equivalent Circuit
TURN-ON PULSE
VBE(off)
Vin
AP
PROX.
-11 V
0 V
t3
TURN-OFF PULSE
t1 ≤ 7.0 ns
100 ≤ t2 < 500 ms
t3 < 15 ns
APPROX. +9.0 V
DUTY CYCLE ≈ 2.0%
VCC
Vin
RC
RB
SCOPE
+4.0 V
Cjd << Ceb
51
t1
t, TIME (s)μ
t, TIME (s)μ
0.02 0.2 2.00.1
0.05 0.5 1.0
5.0
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
2.0
1.0
0.5
0.2
0.1
0.05
Figure 8. Turn−On Resistive Switching Times Figure 9. Resistive Turn−Off Switching Times
IC, COLLECTOR CURRENT (AMPS)
0.01
1.0
0.5
0.1
0.05
0.02
0.02 0.2 2.00.1
0.05 0.5 1.0
tr
td
ts
tf
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
0.2
0.03
0.3
0.03 0.3
0.3
3.0
0.03 0.3
INPUT
50
50
VBB1 = 10 V
RBB2 =
100 W
TUT
VCE MONITOR
100 mH
VCC = 20 V
+
-
RBB1 =
150 W
IC MONITOR
RS =
0.1 W
VBB2 =
0
+
-
Test Circuit Voltage and Current Waveforms
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
VCE(sat)
10 V
VCER
0 V
0.63 A
-5 V
0 V
100 ms
tw ≈ 3 ms
(SEE NOTE 1)
Figure 10. Inductive Load Switching
MJE171
MJD5731
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5
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJD5731/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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