ZXMP6A17G
Document Number DS33375 Rev. 2 - 2 1 of 8
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Product Line o
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ZXMP6
A
17G
ADVANCE INFORMATION
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
-60V 125mΩ @ VGS= -10V -4.3A
190mΩ @ VGS= -4.5V -3.5A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• Motor control
• DC-DC Converters
• Power management functions
• Uninterrupted power supply
Features and Benefits
• Fast switching speed
• Low gate drive
• Low input capacitance
• “Green” component and RoHS compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMP6A17GTA See below 7 12 1,000
Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our w ebsite. For packaging details, go to our website.
Marking Information
Pin Out - Top View
Top View
SOT223
Equivalent Circuit
D
S
G
ZXMP = Product Type Marking Code, Line 1
6A17 = Product Type Marking Code, Line 2
6A17
ZXMP
ZXMP6A17G
Document Number DS33375 Rev. 2 - 2 2 of 8
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ZXMP6
A
17G
ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage VDSS -60 V
Gate-Source voltage VGS ±20 V
Continuous Drain current VGS = 10V (Note 3) ID
-4.3 A
TA = 70°C (Note 3) -3.5
(Note 2) -3.0
Pulsed Drain current VGS= 10V (Note 4) IDM -13.7 A
Continuous Source current (Body diode) (Note 3) IS -4.8 A
Pulsed Source current (Body diode) (Note 4) ISM -13.7 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2) PD
2.0
16 W
mW/°C
(Note 3) 3.9
31
Thermal Resistance, Junction to Ambient (Note 2) RθJA 62.5
°C/W
(Note 3) 32.0
Thermal Resistance, Junction to Lead (Note 5) R
θ
JL 9.8
Operating and storage temperature range TJ, TSTG -55 to 150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP6A17G
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ZXMP6
A
17G
ADVANCE INFORMATION
Thermal Characteristics
110100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe O p erating Area
-ID Drain Current (A)
-VDS Drain-Sou rce Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0 25mm x 25 mm
1oz FR4
Derating Curve
Temperature (°C)
Max Powe r Dissi pati on (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Th erm al Imp ed an ce
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pu lse Wid th (s ) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse P ower Dissipatio n
Pul s e Width (s )
Maximum Power (W)
ZXMP6A17G
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ADVANCE INFORMATION
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS = -60V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
-1.0 ⎯ ⎯ V ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 6) RDS (ON) ⎯ 0.096 0.125 Ω VGS = -10V, ID = -2.2A
0.120 0.190 VGS = -4.5V, ID= -1.8A
Forward Transconductance (Notes 6 & 7) gfs ⎯ 4.7 ⎯ S VDS = -15V, ID= -2.2A
Diode Forward Voltage (Note 6) VSD ⎯ -0.85 -0.95 V
IS = -2.0A, VGS = 0V, TJ= 25°C
Reverse recovery time (Note 7) tr
r
25.1 ⎯ ns IS = -1.7A, di/dt = 100A/μs,
TJ = 25°C
Reverse recovery charge (Note 7) Qr
r
⎯ 27.2 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss ⎯ 637 ⎯ pF VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance Coss ⎯ 70.0 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 53.0 ⎯ pF
Total Gate Charge (Note 8) Q
g
⎯ 9.0 ⎯ nC VGS = -4.5V VDS = -30V
ID = -2.2A
Total Gate Charge (Note 8) Q
g
⎯ 17.7 ⎯ nC VGS = -10V
Gate-Source Charge (Note 8) Q
g
s ⎯ 1.6 ⎯ nC
Gate-Drain Charge (Note 8) Q
d ⎯ 4.4 ⎯ nC
Turn-On Delay Time (Note 8) tD
(
on
)
⎯ 2.6 ⎯ ns VDD = -30V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 8) t
r
⎯ 3.4 ⎯ ns
Turn-Off Delay Time (Note 8) tD
(
off
)
⎯ 26.2 ⎯ ns
Turn-Off Fall Time (Note 8) tf ⎯ 11.3 ⎯ ns
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17G
Document Number DS33375 Rev. 2 - 2 5 of 8
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A
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ADVANCE INFORMATION
Typical Characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
1234
0.1
1
10
-50 0 50 100 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1 1 10
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
10V
2V
3.5V
-VGS
2.5V
4V
3V
O utp u t Ch aracteristics
T = 25°C
-VGS
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
5V
1.5V
3.5V
3V
2V
4.5V
10V
2.5V
O utp u t Ch aracteristics
T = 150°C
-ID Drain Current (A)
-VDS Drain -Source Voltage (V)
5V
Typical Transfer Characteristics
-VDS = 10V
T = 25°C
T = 150°C
-ID Drain Current (A)
-VGS Gate-Source Voltage (V)
No rm alised C urv es v Tem p erature
RDS(on)
VGS = -10V
ID = - 2.3A
VGS(th)
VGS = VDS
ID = -250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
VGS= 0V
4V
10V
3V
2V
3.5V
2.5V
O n -Resistance v D rain Cu rrent
T = 25°C
-VGS
RDS(on) Drain-Source On-Resistance (Ω)
-ID Drain Curre nt (A)
5V
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
-VSD Source-Drai n Voltage (V)
-ISD Reverse Drain Current (A)
ZXMP6A17G
Document Number DS33375 Rev. 2 - 2 6 of 8
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ZXMP6
A
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ADVANCE INFORMATION
Typical Characteristics – continued
0.1 1 10
0
200
400
600
800
1000
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitan ce (pF)
-VDS - Drain - Source Voltage (V) 0 2 4 6 8 1012141618
0
2
4
6
8
10
ID = -2.3A
VDS = -30V
Gate-So urce Voltage v Gate Charge
Capacitance v Drain-Source Voltage Q - Charge (nC)
-VGS Gate-Source Voltage (V)
Test Circuits
C
urrent
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basicgatechargewaveform
Switching time waveforms
D.U.T
50k
0.2␮F
12V Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
d(of )
V
DS
V
DD
R
D
R
G
Pulse width ⬍1␮S
Duty factor 0.1%
V
DS
I
D
I
G
ZXMP6A17G
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ZXMP6
A
17G
ADVANCE INFORMATION
Package Outline Dimensions
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264
A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC
A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
ZXMP6A17G
Document Number DS33375 Rev. 2 - 2 8 of 8
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ZXMP6
A
17G
ADVANCE INFORMATION
Suggested Pad Layout
1.5
0.059
mm
inches
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.0
0.079
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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