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DATA SH EET

Product data sheet

Supersedes data of 2003 Jul 15 2004 Mar 10

DISCRETE SEMICONDUCTORS

BC857M series

PNP general purpose transistors

M3D883

BOTTOM VIEW

2004 Mar 10 2

NXP Semiconductors Product data sheet

PNP general purpose transistors BC857M series

FEATURES

•Leadless ultra small plastic package

(1 mm × 0.6 mm × 0.5 mm)

•Board space 1.3 × 0.9 mm

•Power dissipation comparable to SOT23.

APPLICATIONS

•General purpos e small signal DC

•Low and medium freq ue ncy AC applications

•Mobile communications, digital (still) cameras, PDAs,

PCMCIA cards.

DESCRIPTION

PNP general purpose transistor in a SOT883 leadless ultra

small plastic package.

NPN complement: BC847M series.

MARKING

TYPE NUMBER MARKING CODE

BC857AM D1

BC857BM D2

BC857CM D3

PINNING

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM469

Bottom view 2

Fig.1 Simplified outline (SOT883) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −45 V

ICcollector current (DC) −100 mA

ICM peak collector current −200 mA

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC857AM −Leadless ultra small plastic package; 3 so lder lands; body

1.0 x 0.6 x 0.5 mm SOT883

BC857BM

BC857CM

2004 Mar 10 3

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC857M series

LIMITING VALUES

In accordance with the Absolute Maxi mum System (IEC 60134).

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.

2. Device mounted on a FR4 printed-circuit board, single-sided coppe r, mounting pad for collector 1 cm2.

THERMAL CHARACTE RISTICS

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.

2. Device mounted on a FR4 printed-circuit board, single-sided coppe r, mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter − −50 V

VCEO collector-emitter voltage open base − −45 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −200 mA

IBM peak base current − −100 mA

Ptot total power dissipation Tamb ≤ 25 °C

note 1 −250 mW

note 2 −430 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air

note 1 500 K/W

note 2 290 K/W

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NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC857M series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-of f cu rrent VCB = −30 V; IE = 0 − −15 nA

VCB = −30 V; IE = 0; Tj = 150 °C− −5μA

IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 − −100 nA

hFE DC current gain VCE = −5 V; IC = −2 mA

BC857AM 125 250

BC857BM 220 475

BC857CM 420 800

VBE base-emitter vo ltage IC = −2 mA; VCE = −5 V −600 −750 mV

IC = −10 mA; VCE = −5 V − −820 mV

VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −200 mV

IC = −100 mA; IB = −5 mA; note 1 − −400 mV

Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz −2.5 pF

fTtransition frequen c y VCE = −5 V; IC = −10 mA;

f = 100 MHz 100 −MHz

Fnoise figure IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz; B = 200 Hz −10 dB

2004 Mar 10 5

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC857M series

GRAPHICAL INFORMATION BC857A M

handbook, halfpage

500

100

200

300

400

MLE188

−10−2−10−1

(1)

−1IC (mA)

hFE

−10 −102−103

(2)

(3)

Fig.2 DC current gain; typical values.

VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE189

−10−2−10−1

(1)

−1IC (mA)

VBE

(mV)

−10 −102−103

(3)

(2)

Fig.3 Base-emitter voltage as a functio n of

collector current; typical values.

VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLE190

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(1)

(2)

(3)

Fig.4 Collector-emitter saturation v oltag e as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE191

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2004 Mar 10 6

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC857M series

GRAPHICAL INFORMATION BC857B M

handbook, halfpage

1000

200

400

600

800

MLE192

−10−2−10−1

(1)

−1IC (mA)

hFE

−10 −102−103

(2)

(3)

Fig.6 DC current gain; typical values.

VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE193

−10−2−10−1

(1)

−1IC (mA)

VBE

(mV)

−10 −102−103

(3)

(2)

Fig.7 Base-emitter voltage as a functio n of

collector current; typical values.

VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLE194

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(2)

(3)

(1)

Fig.8 Collector-emitter saturation v oltag e as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE195

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2004 Mar 10 7

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC857M series

GRAPHICAL INFORMATION BC857C M

handbook, halfpage

1000

200

400

600

800

MLE196

−10−2−10−1

(1)

−1IC (mA)

hFE

−10 −102−103

(2)

(3)

Fig.10 DC current gain; typical values.

VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE197

−1−10−1IC (mA)

VBE

(mV)

−10 −102−103

(2)

(1)

(3)

Fig.11 Base-emitter voltage as a func tion of

collector current; typical values.

VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLE198

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(2)

(3)

(1)

Fig.12 Collector-emitter saturation voltag e as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE199

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2004 Mar 10 8

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC857M series

PACKAGE OUTLINE

UNIT A1

max.

A(1) bb

1e1

eLL

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.20

0.12 0.55

0.47

0.03 0.62

0.55 0.35 0.65

DIMENSIONS (mm are the original dimensions)

Note

1. Including plating thickness

0.30

0.22

0.30

0.22

SOT883 SC-101 03-02-05

03-04-03

1.02

0.95

0 0.5 1 mm

scale

eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88

2004 Mar 10 9

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC857M series

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective s pe cification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

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above those given in the Characteristics sections of this

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

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NXP Semiconductors

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Printed in The Netherlands R75/02/pp10 Date of relea se: 2004 Mar 10 Document orde r number: 9397 750 12839