DATA SH EET
Product specification
Supersedes data of April 1996 1996 Sep 17
DISCRETE SEMICONDUCTORS
BAW62
High-speed diode
M3D176
1996 Sep 17 2
Philips Semiconductors Product specification
High-speed diode BAW62
FEATURES
•Hermetically sealed leaded glass
SOD27 (DO-35) package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 75 V
•Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
•High-speed switching
•Fast logic applications.
DESCRIPTION
The BAW62 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −75 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current see Fig.2; note 1 −250 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −350 mW
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
1996 Sep 17 3
Philips Semiconductors Product specification
High-speed diode BAW62
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF= 5 mA 620 750 mV
IF= 100 mA −1000 mV
IF= 100 mA; Tj= 100 °C−930 mV
IRreverse current see Fig.5
VR=20V −25 nA
VR=50V −200 nA
VR=75V −5µA
V
R=20V; T
j= 150 °C−50 µA
VR=75V; T
j= 150 °C−100 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 −2pF
t
rr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
−4ns
V
fr forward recovery voltage when switched from IF= 50 mA;
tr= 20 ns; see Fig.8 −2.5 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
1996 Sep 17 4
Philips Semiconductors Product specification
High-speed diode BAW62
GRAPHICAL DATA
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG448
Tamb (oC)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm. (1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1) (2) (3)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
1996 Sep 17 5
Philips Semiconductors Product specification
High-speed diode BAW62
Fig.5 Reverse current as a function of junction
temperature.
(1) VR= 75 V; maximum values.
(2) VR= 75 V; typical values.
(3) VR= 20 V; typical values.
handbook, halfpage
0 100 Tj (oC) 200
103
102
10−1
10−2
10 (1) (2)
1
IR
(µA)
MGD006
(3)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
1996 Sep 17 6
Philips Semiconductors Product specification
High-speed diode BAW62
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) IR= 1 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
1996 Sep 17 7
Philips Semiconductors Product specification
High-speed diode BAW62
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOD27 (DO-35).
Dimensions in mm.
n
dbook, full pagewidth
MLA428 - 1
25.4 min
4.25
max
1.85
max 25.4 min
0.56
max
