on) 2N6987. 2N6988 Multiple (Quad) PNP Silicon Smail-Signal Transistors . . designed for general-purpose switching circuits and OC to VHF amplitier applications. Similar to 2N29074 individual transistor specifications. Complementary devices available CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 (2N6989/90). MAXIMUM RATINGS Rating Symbol Value Unit oy Collector-Emitter Voltage VcEO 60 Vde CASE 632-06, STYLE 1 Collector-Base Vottay vi Vde z ee 80 % (TO-116) Emitter-Base Voltage VEBO ~5.0 Vde 2N6967 Collector Current le 600 mAdc Device Dissipation @ Ta = 25C PT Watts 2N6987 15 2neges 0.4 wee Derate above 25C 2N6987 eons 2N6988 , - - CASE 607-04 Operating Junction and Storage Ty. Tstg 65 10 200 C ~ aneges Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collecior-Emitter Breakdown Voitage(!) V(BR)CEO 60 - Vde (Ic = 10 mAdc) Collector-Base Breakdown Voltage V(BR)CBO 60 - Vde (Ic = 10 Ade) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 _ Vde {te = 10 wAde} Collector Cutott Current IcBO (Vcp = 50 Vde) _ 10 nAde . (Veg = 50 Vde, Ta = 150C} _ 10 pAdc Emitter-Cutoff Current ~ Tae - 50 nAde (Vp = 3.5 Vide) [ aoe (1) Pulsad, PW 250 10 350 ps. Dury Cycle 1.00 2.0% (continued)ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic Symbeo! | Unit ON CHARACTERISTICS DC Current Gain (VE = 10 Vde, Ic = 0.1 mAde) (VCE = 10 Vde, Ic = 1.0 mAde) (VCE = 10 Ve. Ic = 10 mAde}(") (VoE = 10 Vde, ig = 150 mAdg}(*) (VCE = 10 Vde. i = 500 mAdc)(1) (VE = 10 Vde, ic = 1.0 mAde, Ta = -55C) nFE 75 100 100 100 $0 Collector-Emitter Saturation Voltage) (Iq = 150 mAdc, Ip = 15 mAdc) {lg = 500 mAdc, Ip = 50 mAdc) VCE(sat) 0.4 1.6 Vde Base-Emitter Saturation Voltage(?) (Ic = 150 mAds, ip = 15 mAdc) (Ip = 500 mAde. Ig = 50 mAdc) VaE(sat) 13 26 Vde SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vog = 10 Vde, f = 0.1 to 1.0 MHz) Cobo 8.0 pF Input Capacitance (VeB = 2.0 Vde, f = 0.1 fo 1.0 MHz) Cibo 30 pF Current Transfer Ratio (VE = 10 Vde, Ip = 1.0 mAdc, f = 1.0 kHz) hte 100 Small-Signal Current Transfer Ratio, Magnitude (VCE = 20 Vde, Ig = 50 mAdc, f = 100 MHz) hte 2.0 8&0 Transistor-to- Transistor Resistance (IVT-TI = 500 Vde) IRT-TI 41910 ohms SWITCHING CHARACTERISTICS (See Figure 31) Turn-On Time 45 ns Turn-Off Time lott 300 ns ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Veg = 30 Vde Py = 1.5 W 2NG987, 0.4 W 2N6988 Characteristics Tested Symbol initial and End Point Limits Min Unit Collector Cutoff Current (Vcp = 50 Vde} 'IcBO 10 nAdc DC Current Gain(1) (VE = 10 Vie, Ig = 150 nAdc) nFE 100 300 Delta from Pre-Burn-In Measured Values Max Delta Cailector Cutoff Current AlcBo +100 or +5.0 whichever is greater % Of initiat Value nAdc Delta DC Current Gain(!) ANFE 416 % of Initial Value ()] Pulsed Pulse Width 250 to 380 ys Duty Cycia 1 0 10 2 0%.