POWERMITETM
3.0 WATT Zener Diodes
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1PMT5913Be3 thru 1PMT5956Be3
1PMT5913B thru
1PMT5956B
DESCRIPTION APPEARANCE
This surface mountable 3.0 W Zener diode series in the JEDEC DO-216
package is similar in electrical features to the JEDEC registered 1N5913B
thru 1N5956B axial-leaded package for 3.3 to 200 V. It is an ideal selection
for applications requiring low profile and high-density mounting that are also
RoHS Compliant. When properly heat sunk, these zener diodes provide
power-handling capabilities only found in larger packages. In addition to its
size advantages, Powermite® package features include a full metallic
bottom that eliminates the possibility of solder flux entrapment during
assembly, and a unique locking tab acts as an integral heat sink. Its
innovative design makes this device ideal for use with automatic insertion
equipment.
DO-216
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Very low profile surface mount package (1.1 mm)
• Integral Heat Sink Locking T abs
• Compatible with automatic insertion equipment
• Full metallic bottom eliminates flux e ntrapme nt
• RoHS Compliant
• Zener voltage 3.3 to 200 Volts
• Low reverse leakage
• Tight tolerance available
• Regulates voltage over a broad op erating current
and temperature range
• Wide selection from 3.3 to 200 V
• Flexible axial-lead mounting terminals
• Nonsensitive to ESD
• Moisture classification is Level 1 per IPC/JEDEC
J-STD-020B with no dry pack required
• ESD Rating of >16kV per human body model
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction and storage temperatures: -55°C to +150°C
• DC power dissipation: 3.0 watt with case bottom (TAB
1) ≤ 60°C (also see derating in Figure 1).
• Forward voltage @200 mA: 1.2 volts (maximum)
• Thermal Resistance: 30 ºC/W junction to Case bottom
(Tab 1), or 230ºC/W junction to ambient when mounted
on FR4 PC board (1 oz Cu) with recommen ded
footprint (see last page).
• Steady-State Power: 3.0 watts at TC < 60oC, or 0.54
watts at TA = 25ºC when mounted on FR4 PC board
and recommended footprint as described for thermal
resistance (see Figure 1 and last page)
• Solder Temperatures: 260 ºC for 10 s (max)
• Terminals: Annealed matte-Tin pl ating over copper
and readily solderable per MIL-STD-750 method 2026
(consult factory for Tin-Lead plating)
• Polarity: Cathode designated by TAB 1 (backside)
• Case: Molded epoxy package meets UL94V-0
• Marking: Last three numerical digits of part number
(see device marking code in Electrical Characteristics
table below with dot “•” suffix for RoHS Compliant)
• Weight: 0.016 gram (approximate)
• Tape & Reel option: Standard per EIA-481-B
7 inch reel 3,000 pieces
13 inch reel 12,000 pieces
ELECTRICAL CHARACTERI STICS @ T L = 30oC
Zener
Voltage
VZ
(1)
Test
Current
IZT
Dynamic
Impedance
ZZT
(2)
Knee
Current
IZK
Knee
Impedance
ZZK
Maximum
Reverse
Current
IR
Reverse
Voltage
VR
Maximum
Zener
Current
IZM
(3)
Microsemi
Number
Device
Marking
(4)
VOLTS mA OHMS mA OHMS μAdc VOLTS mA
1PMT5913B
1PMT5914B
1PMT5915B
1PMT5916B
913•
914•
915•
916•
3.3
3.6
3.9
4.3
113.6
104.2
96.1
87.2
10
9.0
7.5
6.0
1.0
1.0
1.0
1.0
500
500
500
500
100
75
25
5
1.0
1.0
1.0
1.0
749.1
686.4
633.6
547.2
1PMT5917B
1PMT5918B
1PMT5919B
1PMT5920B
917•
918•
919•
920•
4.7
5.1
5.6
6.2
79.8
73.5
66.9
60.5
5.0
4.0
2.0
2.0
1.0
1.0
1.0
1.0
500
350
250
200
5
5
5
5
1.5
2.0
3.0
4.0
526.4
481.8
432.3
397.7
Microsemi
Scottsdale Division Page 1
Copyright © 2005
6-19-2005 REV H 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
POWERMITETM
3.0 WATT Zener Diodes
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1PMT5913Be3 thru 1PMT5956Be3
1PMT5913B thru
1PMT5956B
913B thru
1PMT5956B
Zener
Voltage
Zener
Voltage
VZ
V
(1) (1)
Test
Current
Test
Current
IZT
Dynamic
Impedance
Dynamic
Impedance
ZZT Z
(2) (2)
Knee
Current
Knee
Current
IZK I
Knee
Impedance
Knee
Impedance
ZZK Z
Maximum
Reverse
Current
Maximum
Reverse
Current
IR I
Reverse
Voltage
Reverse
Voltage
VR
Maximum
Zener
Current
Maximum
Zener
Current
IZM
I
(3) (3)
Z IZT ZT ZK ZK R VRZM
Microsemi
Number
Device
Marking
Volts mA Ohms mA Ohms µA Volts mA
1PMT5921B
1PMT5922B
1PMT5923B
1PMT5924B
921•
922•
923•
924•
6.8
7.5
8.2
9.1
55.1
50
45.7
41.2
2.5
3.0
3.5
4.0
1.0
0.5
0.5
0.5
200
400
400
500
5
5
5
5
5.2
6.0
6.5
7.0
363.0
330.0
300.3
270.6
1PMT5925B
1PMT5926B
1PMT5927B
1PMT5928B
925•
926•
927•
928•
10
11
12
13
37.5
34.1
31.2
28.8
4.5
5.5
6.5
7.0
0.25
0.25
0.25
0.25
500
550
550
550
5
1
1
1
8.0
8.4
9.1
9.9
247.5
224.4
206.2
189.8
1PMT5929B
1PMT5930B
1PMT5931B
1PMT5932B
929•
930•
931•
932•
15
16
18
20
25
23.4
20.8
18.7
9.0
10
12
14
0.25
0.25
0.25
0.25
600
600
650
650
1
1
1
1
11.4
12.2
13.7
15.2
165.0
153.5
137.0
123.8
1PMT5933B
1PMT5934B
1PMT5935B
1PMT5936B
933•
934•
935•
936•
22
24
27
30
17
15.6
13.9
12.5
17.5
19
23
28
0.25
0.25
0.25
0.25
650
700
700
750
1
1
1
1
16.7
18.2
20.6
22.8
112.2
102.3
90.8
82.5
1PMT5941B
1PMT5942B
1PMT5943B
1PMT5944B
941•
942•
943•
944•
47
51
56
62
8.0
7.3
6.7
6.0
67
70
86
100
0.25
0.25
0.25
0.25
1000
1100
1300
1500
1
1
1
1
35.8
38.8
42.6
47.1
51.2
47.9
42.9
38.6
1PMT5945B
1PMT5946B
1PMT5947B
1PMT5948B
945•
946•
947•
948•
68
75
82
91
5.5
5.0
4.6
4.1
120
140
160
200
0.25
0.25
0.25
0.25
1700
2000
2500
3000
1
1
1
1
51.2
56
62.2
69.2
36.3
33.0
29.7
26.4
1PMT5949B
1PMT5950B
1PMT5951B
1PMT5952B
949•
950•
951•
952•
100
110
120
130
3.7
3.4
3.1
2.9
250
300
380
450
0.25
0.25
0.25
0.25
3100
4000
4500
5000
1
1
1
1
76
83.6
91.2
98.8
24.8
21.5
19.8
18.1
1PMT5953B
1PMT5954B
1PMT5955B
1PMT5956B
953•
954•
955•
956•
150
160
180
200
2.5
2.3
2.1
1.9
600
700
900
1200
0.25
0.25
0.25
0.25
6000
6500
7000
8000
1
1
1
1
114
121.6
136.8
152
16.5
14.9
13.2
11.6
NOTE 1: Product shown has a standard tolerance of ±5% on the nominal zener voltage and is als o available in 2% and 1%
tolerance with suffix C and D respectively. VZ is measured at IZT with TC (TAB 1) 30°C and 20 seconds after application
of dc current.
NOTE 2: Zener impedance is derived by superimposing on IZT a 60 Hz rms ac current eq ual to 10% of IZT.
NOTE 3: Based upon 3 W maximum po wer dissipati on. Allowance has been made for the higher voltage associated with operation
at higher currents and temperature. For determination of voltage change with current deviations from IZT see Micro Note
202.
GRAPHS AND CIRCUIT
Pd Rated Power Dissipation (mW)
CIRCUIT DIAGRAM
T
C Case (TAB 1) Temperature (ºC)
FIGURE 1
Microsemi
Scottsdale Division Page 2
Copyright © 2005
6-19-2005 REV H 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
POWERMITETM
3.0 WATT Zener Diodes
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1PMT5913Be3 thru 1PMT5956Be3
1PMT5913B thru
1PMT5956B
DIMENSIONS
MOUNTING PAD
Microsemi
Scottsdale Division Page 3
Copyright © 2005
6-19-2005 REV H 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
