19-4639; Rev 2; 5/09 Stand-Alone Fuel-Gauge IC with LED Display Drivers The DS2788 measures voltage, temperature, and current, and estimates available capacity for rechargeable lithium-ion (Li+) and Li+ polymer batteries. Cell characteristics and application parameters used in the calculations are stored in on-chip EEPROM. The available capacity registers report a conservative estimate of the amount of charge that can be removed given the current temperature, discharge rate, stored charge, and application parameters. Capacity estimation is reported in mAh remaining and percentage of full. LED display drivers and a debounced input make display of the capacity information easy. The LED pins can directly sink current, requiring only a resistor for setting the current in the LED display, thus reducing space and cost. Applications Power Tools Features Five 30mA Open-Drain Drivers for Driving LED Fuel-Gauge Display Debounced Fuel-Gauge Display Enable Internal Voltage Measurement Gain Register for Trimming External Voltage-Divider Pin for Driving FETs to Enable Voltage-Divider Only During Voltage Measurement, Conserving Power Precision Voltage, Temperature, and Current Measurement System Accurate, Temperature-Stable, Internal Time Base Absolute and Relative Capacity Estimated from Coulomb Count, Discharge Rate, Temperature, and Battery Cell Characteristics Accurate Warning of Low Battery Conditions Electric Bicycles Automatic Backup of Coulomb Count and Age Estimation to Nonvolatile (NV) EEPROM Electric Vehicles Uninterruptible Power Supply Gain and Tempco Calibration Allows the Use of Low-Cost Sense Resistors Digital Cameras 24-Byte Battery/Application Parameter EEPROM Pin Configuration 16-Byte User EEPROM Unique ID and Multidrop 1-Wire(R) Interface TOP VIEW 14-Pin TSSOP Package + LED2 1 14 LED3 LED1 2 13 LED4 DVSS 3 12 LED5 PART TEMP RANGE PIN-PACKAGE 11 PIO DS2788E+ -25C to +70C 14 TSSOP 10 VIN DS2788E+T&R -25C to +70C 14 TSSOP VDD 4 OVD 5 DS2788 VSS 6 9 SNS DQ 7 8 VMA Ordering Information +Denotes a lead(Pb)-free/RoHS-compliant package. T&R = Tape and reel. TSSOP Typical Operating Circuit appears at end of data sheet. 1-Wire is a registered trademark of Maxim Integrated Products, Inc. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com. 1 DS2788 General Description DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers ABSOLUTE MAXIMUM RATINGS Operating Temperature Range ...........................-40C to +85C Storage Temperature Range .............................-55C to +125C Soldering Temperature (10s) ................Refer to IPC/JEDEC-020 Specification. Voltage Range on Any Pin Relative to VSS..............-0.3V to +6.0V Voltage Range on VIN, VMA Relative to VSS ...-0.3V to VDD + 0.3V DVSS to VSS .....................................................................-0.3V to +0.3V LED1-5.................................................................60mA each pin Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CHARACTERISTICS (VDD = 2.5V to 4.5V, TA = -25C to +70C, unless otherwise noted. Typical values are at TA = +25C.) PARAMETER MAX UNITS (Note 1) +2.5 +4.5 V VIN, VMA Voltage Range (Note 1) 0 VDD V DQ, PIO, OVD, LED1-LED5 Voltage Range (Note 1) 0 +5.5 V MAX UNITS Supply Voltage SYMBOL VDD CONDITIONS MIN TYP DC ELECTRICAL CHARACTERISTICS (VDD = 2.5V to 4.5V, TA = -25C to +70C, unless otherwise noted. Typical values are at TA = +25C.) PARAMETER SYMBOL ACTIVE Current IACTIVE SLEEP Mode Current I SLEEP CONDITIONS MIN 2.5V VDD 4.2V TYP 70 95 105 1 A 3 A Input Logic-High: DQ, PIO VIH (Note 1) Input Logic-Low: DQ, PIO VIL (Note 1) 0.6 V Output Logic-Low: DQ, PIO, VMA VOL I OL = 4mA (Note 1) 0.4 V Output Logic-High: VMA VOH I OH = 1mA (Note 1) VMA Precharge Time tPRE Pulldown Current: DQ, PIO I PD VDQ, VPIO = 0.4V Output Logic-Low: LED1-LED5 VOL I OL = -30mA (Note 1) Input Logic-High: OVD VIH (Note 1) Input Logic-Low: OVD VIL (Note 1) VIN Input Resistance 1.5 V VDD 0.5 V 13.3 RIN 0.2 14.2 ms 5 A 1 V VDD 0.2 V VSS + 0.2 15 V M DQ SLEEP Timeout t SLEEP DQ < VIL 1.8 2.0 2.2 Undervoltage SLEEP Threshold VSLEEP (Note 1) 2.40 2.45 2.50 V 130 ms PIO Switch Debounce LED1 Display Blink Rate LED Display-On Time 2 100 50% duty cycle s 0.9 1.0 1.1 Hz 3.6 4.0 4.4 s _______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers DS2788 ELECTRICAL CHARACTERISTICS: TEMPERATURE, VOLTAGE, CURRENT (VCC = 2.5V to 4.5V, TA = -25C to +70C, unless otherwise noted. Typical values are at TA = +25C.) PARAMETER SYMBOL Temperature Resolution TLSB Temperature Error T ERR Voltage Resolution VLSB Voltage Full-Scale VFS CONDITIONS MIN TYP MAX 0.125 C 3 4.88 0 UNITS C mV 4.5 V 50 mV 51.2 mV 1 % Full Scale Voltage Error VERR Current Resolution ILSB Current Full-Scale IFS Current Gain Error I GERR (Note 2) Current Offset Error I OERR 0C TA +70C, 2.5V VDD 4.2V (Notes 3, 4) -7.82 +12.5 V Accumulated Current Offset qOERR 0C TA +70C, 2.5V VDD 4.2V, VSNS = VSS (Notes 3, 4, 5) -188 0 Vhr/ day Timebase Error t ERR 1.56 V VDD = 3.8V, TA = +25C 1 0C TA +70C, 2.5V VDD 4.2V 2 % 3 ELECTRICAL CHARACTERISTICS: 1-Wire INTERFACE, STANDARD (VCC = 2.5V to 4.5V, TA = -25C to +70C.) PARAMETER Time Slot SYMBOL t SLOT Recovery Time CONDITIONS MIN 60 TYP MAX UNITS 120 s tREC 1 Write-0 Low Time tLOW0 60 120 s s Write-1 Low Time tLOW1 1 15 s Read Data Valid tRDV Reset-Time High tRSTH 480 15 s Reset-Time Low tRSTL 480 960 Presence-Detect High t PDH 15 60 s Presence-Detect Low t PDL 60 240 s s s _______________________________________________________________________________________ 3 DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers ELECTRICAL CHARACTERISTICS: 1-Wire INTERFACE, OVERDRIVE (VCC = 2.5V to 4.5V, TA = -25C to +70C.) PARAMETER Time Slot Recovery Time SYMBOL CONDITIONS MIN tSLOT 6 TYP MAX UNITS 16 s tREC 1 Write-0 Low Time tLOW0 6 16 s s Write-1 Low Time tLOW1 1 2 s Read Data Valid tRDV Reset-Time High tRSTH 48 2 s Reset-Time Low tRSTL 48 Presence-Detect High tPDH 2 6 s Presence-Detect Low tPDL 8 24 s MAX UNITS s 80 s EEPROM RELIABILITY SPECIFICATION (VCC = 2.5V to 4.5V, TA = -25C to +70C, unless otherwise noted. Typical values are at TA = +25C.) PARAMETER SYMBOL EEPROM Copy Time t EEC EEPROM Copy Endurance NEEC Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: 4 CONDITIONS MIN TYP 10 TA = +50C (Note 6) 50,000 All voltages are referenced to VSS. Factory-calibrated accuracy. Higher accuracy can be achieved by in-system calibration by the user. Parameters guaranteed by design. At a constant regulated VDD voltage, the Current Offset Bias register can be used to obtain higher accuracy. Accumulation Bias register set to 00h. EEPROM data retention is 10 years at +50C. _______________________________________________________________________________________ ms Cycles Stand-Alone Fuel-Gauge IC with LED Display Drivers PIN NAME 1 LED2 Display Driver. Connect to an LED connected to VDD for display of relative pack capacity. FUNCTION 2 LED1 Display Driver. Connect to an LED connected to VDD for display of relative pack capacity. 3 DVSS 4 VDD Power-Supply Input. Connect to the positive terminal of the battery cell through a decoupling network. 5 OVD 1-Wire Bus Speed Control. Input logic level selects the speed of the 1-Wire bus. Logic 1 selects overdrive (OVD) and Logic 0 selects standard (STD) timing. On a multidrop bus, all devices must operate at the same speed. 6 VSS Device Ground. Connect directly to the negative terminal of the battery cell. Connect the sense resistor between VSS and SNS. 7 DQ Data Input/Output. 1-Wire data line, open-drain output driver. Connect this pin to the DATA terminal of the battery pack. This pin has a weak internal pulldown (IPD) for sensing pack disconnection from host or charger. 8 VMA Voltage Measurement Active. Output is driven high before the start of a voltage conversion and driven low at the end of the conversion cycle. 9 SNS Sense Resistor Connection. Connect to the negative terminal of the battery pack. Connect the sense resistor between VSS and SNS. 10 VIN Voltage Sense Input. The voltage of the battery cell is monitored through this input pin. 11 PIO Programmable I/O Pin. Can be configured as input or output to monitor or control user-defined external circuitry. Output driver is open drain. This pin has a weak internal pulldown (IPD). When configured as an input, upon recognition of a rising edge, the fuel-gauge display is enabled. 12 LED5 Display Driver. Connect to an LED connected to VDD for display of relative pack capacity. Leave floating in LED4 configuration. 13 LED4 Display Driver. Connect to an LED connected to VDD for display of relative pack capacity. 14 LED3 Display Driver. Connect to an LED connected to VDD for display of relative pack capacity. Display Ground. Ground connection for the LED display drivers. Connect to VSS. VDD EN BIAS/VREF TIME BASE VPOR LED DRIVERS PIO DQ OVD 1-Wire INTERFACE STATUS AND CONTROL TEMP AND VOLTAGE ADC LED5 LED4 LED3 LED2 LED1 DVSS VMA VIN EEPROM DS2788 ACCUMULATED CURRENT CURRENT ADC 15-BIT + SIGN SNS RATE AND TEMPERATURE COMPENSATION VSS Figure 1. Block Diagram _______________________________________________________________________________________ 5 DS2788 Pin Description DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Detailed Description The DS2788 operates directly from 2.5V to 4.5V and supports single-cell Li+ battery packs. As shown in Figure 2, the DS2788 accommodates multicell applications by adding a trim resistor for calibration of an external voltage-divider for VIN. NV storage is provided for cell compensation and application parameters. Host-side development of fuel-gauging algorithms is eliminated. On-chip algorithms and convenient status reporting of operating conditions reduce the serial polling required of the host processor. Additionally, 16 bytes of EEPROM memory are made available for the exclusive use of the host system and/or pack manufacturer. The additional EEPROM memory can be used to facilitate battery lot and date tracking and NV storage of system or battery usage statistics. A 1-Wire interface provides serial communication at the standard 16kbps or overdrive 140kbps speeds, allowing access to data registers, control registers, and user memory. A unique, factory-programmed, 64-bit regis- tration number (8-bit family code + 48-bit serial number + 8-bit CRC) assures that no two parts are alike and enables absolute traceability. The 1-Wire interface on the DS2788 supports multidrop capability so that multiple slave devices can be addressed with a single pin. Power Modes The DS2788 has two power modes: ACTIVE and SLEEP. On initial power-up, the DS2788 defaults to ACTIVE mode. While in ACTIVE mode, the DS2788 is fully functional with measurements and capacity estimation continuously updated. In SLEEP mode, the DS2788 conserves power by disabling measurement and capacity estimation functions, but preserves register contents. SLEEP mode is entered under two different conditions and an enable bit for each condition makes entry into SLEEP optional. SLEEP mode can be enabled using the power mode (PMOD) bit or the undervoltage enable (UVEN) bit. The PMOD type SLEEP is entered if the PMOD bit is set and DQ is low for tSLEEP (2s nominal). The condition of DQ low for tSLEEP can be used to detect a pack discon- PK+ IN ENABLE 0.1F MAX6765TTLD2+ RST OUT 330 330 330 330 GND TIMEOUT 10k 330 10-CELL Li+ BATTERY BSS84 B3F-1000 LEDs LED1 LED2 LED3 LED4 DS2788 LED5 150 DATA 10k PIO VDD DQ SNS 900k VMA VIN OVD DVSS VSS 2N7002 10F 0.1F 100k 5.6V RSNS 20m PK- Figure 2. Multicell Application Example 6 _______________________________________________________________________________________ PROTECTION CIRCUIT Stand-Alone Fuel-Gauge IC with LED Display Drivers Note: PMOD and UVEN SLEEP features must be disabled when a battery is charged on an external charger that does not connect to the DQ pin. PMOD SLEEP can be used if the charger pulls DQ high. UVEN SLEEP can be used if the charger toggles DQ. The DS2788 remains in SLEEP and therefore does not measure or accumulate current when a battery is charged on a charger that fails to properly drive DQ. Initiating Communication in Sleep When beginning communication with a DS2788 in PMOD SLEEP, DQ must be pulled up first and then a 1-Wire reset pulse must be issued by the master. In UVEN SLEEP, the procedure depends on the state of DQ when UVEN SLEEP was entered. If DQ was low, DQ must be pulled up and then a 1-Wire reset pulse must be issued by the master as with PMOD SLEEP. If DQ was high when UVEN SLEEP was entered, then the DS2788 is prepared to receive a 1-Wire reset from the master. In the first two cases with DQ low during SLEEP, the DS2788 does not respond to the first rising edge of DQ with a presence pulse. Voltage Measurement Battery voltage is measured at the V IN input with respect to VSS over a range of 0 to 4.5V, with a resolution of 4.88mV. The result is updated every 440ms and placed in the Voltage (VOLT) register in two's complement form. Voltages above the maximum register value are reported at the maximum value; voltages below the minimum register value are reported at the minimum value. Figure 3 shows the format of the Voltage register. VIN is usually connected to the positive terminal of a single-cell Li+ battery by a 1k resistor. The input impedance is sufficiently large (15M) to be connected to a high-impedance voltage-divider in order to support multiple-cell applications. The pack voltage should be divided by the number of series cells to present a single-cell average voltage to the VIN input. In Figure 2, the value of R can be up to 1M without incurring significant error due to input loading. The VMA pin is driven high tPRE before the voltage conversion begins. This allows an external switching element to enable the voltage-divider, and allows settling to occur before the start of the conversion. READ ONLY VOLT MSB--ADDRESS 0Ch S 29 28 27 26 MSb "S": SIGN BIT(S), "X": RESERVED 25 LSB--ADDRESS 0Dh 24 23 22 LSb MSb 21 20 X X X X X LSb UNITS: 4.88mV Figure 3. Voltage Register Format _______________________________________________________________________________________ 7 DS2788 nection or system shutdown, in which no charge or discharge current flows. A PMOD SLEEP condition transitions back to ACTIVE mode when DQ is pulled high. The second option for entering SLEEP is an undervoltage condition. When the UVEN bit is set, the DS2788 transitions to SLEEP if the voltage on VIN is less than VSLEEP (2.45V nominal) and DQ is stable at a low or high logic level for tSLEEP. An undervoltage condition occurs when a pack is fully discharged, where loading on the battery should be minimized. UVEN SLEEP relieves the battery of the IACTIVE load until communication on DQ resumes. DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Temperature Measurement The DS2788 uses an integrated temperature sensor to measure battery temperature with a resolution of 0.125C. Temperature measurements are updated every 440ms and placed in the Temperature (TEMP) register in two's complement form. Figure 4 shows the format of the Temperature register. Current Measurement In the ACTIVE mode of operation, the DS2788 continually measures the current flow into and out of the battery by measuring the voltage drop across a low-value current-sense resistor, RSNS. The voltage-sense range between SNS and VSS is 51.2mV. The input linearly converts peak signal amplitudes up to 102.4mV as long as the continuous signal level (average over the conversion cycle period) does not exceed 51.2mV. The ADC samples the input differentially at 18.6kHz and updates the Current (CURRENT) register at the completion of each conversion cycle. The Current register is updated every 3.515s with the current conversion result in two's complement form. Charge currents above the maximum register value are reported at the maximum value (7FFFh = +51.2mV). Discharge currents below the minimum register value are reported at the minimum value (8000h = -51.2mV). READ ONLY TEMP MSB--ADDRESS 0Ah S 29 28 27 26 LSB--ADDRESS 0Bh 25 24 MSb 23 22 LSb MSb 21 20 X X X X X LSb "S": SIGN BIT(S), "X": RESERVED UNITS: 0.125C Figure 4. Temperature Register Format READ ONLY CURRENT MSB--ADDRESS 0Eh S 214 213 212 211 LSB--ADDRESS 0Fh 210 29 MSb 28 27 LSb MSb 26 25 24 23 22 20 LSb "S": SIGN BIT(S) UNITS: 1.5625V/RSNS CURRENT RESOLUTION (1 LSB) VSS - VSNS 1.5625V RSNS 20m 15m 10m 5m 78.13A 104.2A 156.3A 312.5A Figure 5. Current Register Format 8 21 _______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers Current Offset Bias The Average Current (IAVG) register reports an average current level over the preceding 28 seconds. The register value is updated every 28s in two's complement form, and is the average of the eight preceding Current register updates. Figure 6 shows the format of the Average Current register. Charge currents above the maximum register value are reported at the maximum value (7FFFh = +51.2mV). Discharge currents below the minimum register value are reported at the minimum value (8000h = -51.2mV). The Current Offset Bias (COB) register allows a programmable offset value to be added to raw current measurements. The result of the raw current measurement plus COB is displayed as the current measurement result in the Current register, and is used for current accumulation. COB can be used to correct for a static offset error, or can be used to intentionally skew the current results and therefore the current accumulation. COB allows read and write access. Whenever the COB is written, the new value is applied to all subsequent current measurements. COB can be programmed in 1.56V steps to any value between +198.1V and 199.7V. The COB value is stored as a two's complement value in nonvolatile memory. Current Offset Correction Every 1024th conversion the ADC measures its input offset to facilitate offset correction. Offset correction occurs approximately once per hour. The resulting correction factor is applied to the subsequent 1023 measurements. During the offset correction conversion, the ADC does not measure the sense resistor signal. A maximum error of 1/1024 in the Accumulated Current (ACR) register is possible; however, to reduce the error, the current measurement made just prior to the offset conversion is displayed in the Current register and is substituted for the dropped current measurement in the current accumulation process. This results in an accumulated current error due to offset correction of less than 1/1024. Current Measurement Calibration The DS2788's current measurement gain can be adjusted through the RSGAIN register, which is factorycalibrated to meet the data sheet specified accuracy. RSGAIN is user accessible and can be reprogrammed after module or pack manufacture to improve the current measurement accuracy. Adjusting RSGAIN can correct for variation in an external sense resistor's nominal value, and allows the use of low-cost, nonprecision READ ONLY IAVG MSB--ADDRESS 08h S 214 213 212 211 LSB--ADDRESS 09h 210 29 MSb 28 27 LSb MSb 26 25 24 23 22 21 20 LSb "S": SIGN BIT(S) UNITS: 1.5625V/RSNS Figure 6. Average Current Register Format RW AND EE COB ADDRESS 7Bh S 26 MSb "S": SIGN BIT(S) 25 24 23 22 21 20 LSb UNITS: 1.56V/RSNS Figure 7. Current Offset Bias Register Format _______________________________________________________________________________________ 9 DS2788 Average Current Measurement DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers current-sense resistors. RSGAIN is an 11-bit value stored in 2 bytes of the parameter EEPROM memory block. The RSGAIN value adjusts the gain from 0 to 1.999 in steps of 0.001 (precisely 2-10). The user must program RSGAIN cautiously to ensure accurate current measurement. When shipped from the factory, the gain calibration value is stored in two separate locations in the parameter EEPROM block: RSGAIN, which is reprogrammable, and FRSGAIN, which is read only. RSGAIN determines the gain used in the current measurement. The read-only FRSGAIN (address B0h and B1h) is provided to preserve the factory value only and is not used in the current measurement. Sense Resistor Temperature Compensation The DS2788 is capable of temperature compensating the current-sense resistor to correct for variation in a sense resistor's value over temperature. The DS2788 is factory programmed with the sense resistor temperature coefficient, RSTC, set to zero, which turns off the temperature compensation function. RSTC is user accessible and can be reprogrammed after module or pack manufacture to improve the current accuracy when using a high temperature coefficient current-sense resistor. RSTC is an 8-bit value stored in the parameter EEPROM memory block. The RSTC value sets the temperature coefficient from 0 to +7782ppm/C in steps of 30.5ppm/C. The user must program RSTC cautiously to ensure accurate current measurement. Temperature compensation adjustments are made when the Temperature register crosses 0.5C boundaries. The temperature compensation is most effective with the resistor placed as close as possible to the VSS terminal to optimize thermal coupling of the resistor to the on-chip temperature sensor. If the current shunt is constructed with a copper PCB trace, run the trace under the DS2788 package if possible. Current Accumulation Current measurements are internally summed, or accumulated, at the completion of each conversion period with the results displayed in the ACR. The accuracy of the ACR is dependent on both the current measurement and the conversion time base. The ACR has a range of 0 to 409.6mVh with an LSb (least significant bit) of 6.25Vh. Additional read-only registers (ACRL) hold fractional results of each accumulation to avoid truncation errors. Accumulation of charge current above the maximum register value is reported at the maximum register value (7FFFh); conversely, accumulation of discharge current below the minimum register value is reported at the minimum value (8000h). Read and write access is allowed to the ACR. The ACR must be written MSB (most significant byte) first, then LSB (least significant byte). The write must be completed within 3.515s (one ACR register update period). A write to the ACR forces the ADC to perform an offset correction conversion and update the internal offset correction factor. Current measurement and accumulation begins with the second conversion following a write to the ACR. Writing the ACR clears the fractional values in ACRL. ACR's format is shown in Figure 8, and ACRL's format is shown in Figure 9. To preserve the ACR value in case of power loss, the ACR value is backed up to EEPROM. The ACR value is recovered from EEPROM on power-up. See the memory map in Table 3 for specific address location and backup frequency. R/W AND EE ACR MSB--ADDRESS 10h 215 214 213 212 211 210 LSB--ADDRESS 11h 29 MSb 28 27 LSb MSb 26 25 24 23 22 21 20 LSb UNITS: 6.25Vh/RSNS Figure 8. Accumulated Current Register (ACR) Format 10 ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers MSB--ADDRESS 12h 211 DS2788 READ ONLY ACRL 210 29 28 27 LSB--ADDRESS 13h 26 25 MSb 24 23 LSb MSb 22 21 20 X X X X LSb "X": reserved UNITS: 1.526nVhr/RSNS ACR LSb RSNS VSS - VSNS 6.25Vh 20m 15m 10m 5m 312.5Ah 416.7Ah 625Ah 1.250mAh ACR RANGE RSNS VSS - VSNS 409.6mVh 20m 15m 10m 5m 20.48Ah 27.30Ah 40.96Ah 81.92Ah Figure 9. Fractional/Low Accumulated Current Register (ACRL) Format EE AB ADDRESS 61h S 26 25 24 MSb "S": SIGN BIT(S) 23 22 21 20 LSb UNITS: 1.5625V/RSNS Figure 10. Accumulation Bias Register Formats Current Blanking Accumulation Bias The current blanking feature modifies the current measurement result prior to being accumulated in the ACR. Current blanking occurs conditionally when a current measurement (raw current + COB) falls in one of two defined ranges. The first range prevents charge currents less than 100V from being accumulated. The second range prevents discharge currents less than 25V in magnitude from being accumulated. Chargecurrent blanking is always performed, however, discharge-current blanking must be enabled by setting the NBEN bit in the Control register. See the register description for additional information. The Accumulation Bias (AB) register allows an arbitrary bias to be introduced into the current-accumulation process. The AB can be used to account for currents that do not flow through the sense resistor, estimate currents too small to measure, estimate battery self-discharge, or correct for static offset of the individual DS2788 device. The AB register allows a user-programmed positive or negative constant bias to be included in the current accumulation process. The user-programmed two's complement value, with bit weighting the same as the Current register, is added to the ACR once per current conversion cycle. The AB value is loaded on power-up from EEPROM memory. Figure 10 shows the format of the AB register. ______________________________________________________________________________________ 11 DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Capacity Estimation Algorithm Remaining capacity estimation uses real-time measured values and stored parameters describing the cell characteristics and application operating limits. Figure 11 describes the algorithm inputs and outputs. Modeling Cell Stack Characteristics To achieve reasonable accuracy in estimating remaining capacity, the cell stack performance characteristics over temperature, load current, and charge termination VOLTAGE (R) TEMPERATURE (R) point must be considered. Since the behavior of Li+ cells is nonlinear, these characteristics must be included in the capacity estimation to achieve an acceptable level of accuracy in the capacity estimation. The FuelPackTM method used in the DS2788 is described in general in Application Note 131: Lithium-Ion Cell Fuel Gauging with Maxim Battery Monitor ICs. To facilitate efficient implementation in hardware, a modified version of the method outlined in AN131 is used to store cell characteristics in the DS2788. Full and empty points are retrieved in a lookup process that retraces piece-wise linear model consisting of three curves FULL FULL(T) (R) ACTIVE EMPTY AE(T) (R) STANDBY EMPTY SE(T) (R) CAPACITY LOOKUP CURRENT (R) ACCUMULATED CURRENT (ACR) (RW) AVAILABLE CAPACITY CALCULATION ACR HOUSEKEEPING AGE ESTIMATOR AVERAGE CURRENT (R) CELL PARAMETERS 16 BYTES (EEPROM) LEARN FUNCTION REMAINING ACTIVE ABSOLUTE CAPACITY (RAAC) mAh (R) REMAINING STANDBY ABSOLUTE CAPACITY (RSAC) mAh (R) REMAINING ACTIVE RELATIVE CAPACITY (RARC) % (R) REMAINING STANDBY RELATIVE CAPACITY (RSRC) % (R) AGING CAPACITY (AC) (2 BYTES EE) AGE SCALAR (AS) (1-BYTE EE) SENSE RESISTOR PRIME (RSNSP) (1 -BYTE EE) CHARGE VOLTAGE (VCHG) (1-BYTE EE) MINIMUM CHARGE CURRENT (IMIN) (1-BYTE EE) ACTIVE EMPTY VOLTAGE (VAE) (1-BYTE EE) ACTIVE EMPTY CURRENT (IAE) (1-BYTE EE) Figure 11. Top Level Algorithm Diagram FuelPack is a trademark of Maxim Integrated Products, Inc. 12 ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers SEGMENT 1 Full: The full curve defines how the full point of a given cell stack depends on temperature for a given charge termination. The charge termination method used in the application is used to determine the table values. The DS2788 reconstructs the full line from cell characteristic table values to determine the full capacity of the battery at each temperature. Reconstruction occurs in onedegree temperature increments. Full values are stored as ppm change per C. For example, if a cell had a nominal capacity of 1214mAh at +50C, a full value of 1199mAh at +25C, and 1182mAh at 0C (TBP23), the slope for segment 3 would be: ((1199mAh - 1182mAh) / (1214mAh / 1M)) / (25C - 0C) = 560ppm/C 1 LSB of the slope registers equals 61ppm so the full segment 3 slope register (location 0x6Dh) would be programmed with a value of 0x09h. Each Slope register has a dynamic range 0ppm to 15555ppm. SEGMENT 3 SEGMENT 2 SEGMENT 4 SEGMENT 5 100% FULL DERIVATIVE (ppm/C) CELL CHARACTERIZATION ACTIVE EMPTY TBP12 STANDBY EMPTY TBP23 +25C +50C Figure 12. Cell Model Example Diagram ______________________________________________________________________________________ 13 DS2788 named full, active empty, and standby empty. Each model curve is constructed with five line segments, numbered 1 through 5. Above +50C, the segment 5 model curves extend infinitely with zero slope, approximating the nearly flat change in capacity of Li+ cells at temperatures above +50C. Segment 4 of each model curves originates at +50C on its upper end and extends downward in temperature to +25C. Segment 3 joins with segment 2, which in turn joins with segment 1. Segment 1 of each model curve extends from the junction with segment 2 to infinitely colder temperatures. Segment slopes are stored as Vh ppm change per C. The two junctions or breakpoints that join the segments (labeled TBP12 and TBP23 in Figure 12) are programmable in 1C increments from -128C to +25C. They are stored in two's complement format, TBP23 at 7Ch, and TBP12 at 7Dh. The slope or derivative for segments 1, 2, 3, and 4 are also programmable. DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Active Empty: The active empty curve defines the temperature variation in the empty point of the discharge profile based on a high-level load current (one that is sustained during a high-power operating mode) and the minimum voltage required for system operation. This load current is programmed as the active empty current (IAE), and should be a 3.5s average value to correspond to values read from the Current register and the specified minimum voltage, or active empty voltage (VAE) should be a 250ms average to correspond to values read from the Voltage register. The DS2788 reconstructs the active empty line from cell characteristic table values to determine the active empty capacity of the battery at each temperature. Reconstruction occurs in one-degree temperature increments. Active empty segment slopes are stored the same as described for the full segments. Standby Empty: The standby empty curve defines the temperature variation in the empty point in the discharge defined by the application standby current and the minimum voltage required for standby operation. Standby empty represents the point that the battery can no longer support a subset of the full application operation, such as memory data retention or organizer functions on a wireless handset. Standby empty segment slopes are stored the same as described for the full segments. The standby load current and voltage are used for determining the cell characteristics but are not programmed into the DS2788. The DS2788 reconstructs the standby empty line from cell characteristic table values to determine the standby empty capacity of the battery at each temperature. Reconstruction occurs in one-degree temperature increments. Cell Stack Model Construction The model is constructed with all points normalized to the fully charged state at +50C. The cell parameter EEPROM block stores the initial values, the +50C full value in mVh units, and the +50C active empty value as a fraction of the +50C value. Standby empty at +50C is by definition zero and therefore no storage is required. The slopes (derivatives) of the 4 segments for each model curve are also stored in the cell parameter EEPROM block along with the break point temperatures of each segment. Table 1 shows an example of data stored in this manner. CELL MODEL PARAMETERS 15 BYTES (EEPROM) FULL(T) LOOKUP FUNCTION AE(T) SE(T) TEMPERATURE Figure 13. Lookup Function Diagram Table 1. Example Cell Characterization Table (Normalized to +50C) Manufacturer's Rated Cell Capacity: 1220mAh Charge Voltage: 4.2V Charge Current: 500mA Active Empty (V, I): 3.0V, 500mA Termination Current: 50mA Standby Empty (V, I): 3.0V, 4mA Sense Resistor: 0.020 SEGMENT BREAKPOINTS TBP12 = -12C TBP23 = 0C +50C NOMINAL (mAh) SEGMENT 1 (ppm/C) SEGMENT 2 (ppm/C) SEGMENT 3 (ppm/C) SEGMENT 4 (ppm/C) 1214 488 549 1587 2686 Active Empty 854 1526 2686 3113 Standby Empty 244 183 916 244 CALCULATED VALUE Full 14 ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers In addition to cell model characteristics, several application parameters are needed to detect the full and empty points, as well as calculate results in mAh units. Sense Resistor Prime (RSNSP) RSNSP stores the value of the sense resistor for use in computing the absolute capacity results. The value is stored as a 1-byte conductance value with units of mhos. RSNSP supports resistor values of 1 to 3.922m. RSNSP is located in the parameter EEPROM block. Charge Voltage (VCHG) VCHG stores the charge voltage threshold used to detect a fully charged state. The value is stored as a 1-byte voltage with units of 19.52mV and can range from 0 to 4.978V. VCHG should be set marginally less than the cell voltage at the end of the charge cycle to ensure reliable charge termination detection. VCHG is located in the parameter EEPROM block. Minimum Charge Current (IMIN) IMIN stores the charge current threshold used to detect a fully charged state. The value is stored as a 1-byte value with units of 50V and can range from 0 to 12.75mV. Assuming RSNS = 20m, IMIN can be programmed from 0 to 637.5mA in 2.5mA steps. IMIN should be set marginally greater than the charge current at the end of the charge cycle to ensure reliable charge termination detection. IMIN is located in the parameter EEPROM block. Active Empty Voltage (VAE) VAE stores the voltage threshold used to detect the active empty point. The value is stored in 1 byte with units of 19.52mV and can range from 0 to 4.978V. VAE is located in the parameter EEPROM block. Active Empty Current (IAE) IAE stores the discharge current threshold used to detect the active empty point. The unsigned value represents the magnitude of the discharge current and is stored in 1 byte with units of 200V and can range from 0 to 51.2mV. Assuming RSNS = 20m, IAE can be programmed from 0mA to 2550mA in 10mA steps. IAE is located in the parameter EEPROM block. Aging Capacity (AC) AC stores the rated battery capacity used in estimating the decrease in battery capacity that occurs in normal use. The value is stored in 2 bytes in the same units as the ACR (6.25Vh). Setting AC to the manufacturer's rated capacity sets the aging rate to approximately 2.4% per 100 cycles of equivalent full capacity discharges. Partial discharge cycles are added to form equivalent full capacity discharges. The default estimation results in 88% capacity after 500 equivalent cycles. The estimated aging rate can be adjusted by setting AC to a different value than the cell manufacturer's rating. Setting AC to a lower value, accelerates the estimated aging. Setting AC to a higher value retards the estimated aging. AC is located in the parameter EEPROM block. Age Scalar (AS) AS adjusts the capacity estimation results downward to compensate for cell aging. AS is a 1-byte value that represents values between 49.2% and 100%. The LSB is weighted at 0.78% (precisely 2-7). A value of 100% (128 decimal or 80h) represents an unaged battery. A value of 95% is recommended as the starting AS value at the time of pack manufacture to allow learning a larger capacity on batteries that have an initial capacity greater than the nominal capacity programmed in the cell characteristic table. AS is modified by the cyclecount-based age estimation introduced above and by the capacity learn function. The host system has read and write access to AS, however caution should be exercised when writing AS to ensure that the cumulative aging estimate is not overwritten with an incorrect value. Typically, it is not necessary for the host to write AS because the DS2788 automatically saves AS to EEPROM on a periodic basis. (See the Memory section for details.) The EEPROM-stored value of AS is recalled on power-up. Capacity Estimation Utility Functions Aging Estimation As previously discussed, the AS register value is adjusted occasionally based on cumulative discharge. As the ACR register decrements during each discharge cycle, an internal counter is incremented until equal to 32 times AC. AS is then decremented by one, resulting in a decrease in the scaled full battery capacity of 0.78%. See the AC register description for recommendations on customizing the age estimation rate. Learn Function Since Li+ cells exhibit charge efficiencies near unity, the charge delivered to a Li+ cell from a known empty point to a known full point is a dependable measure of the cell capacity. A continuous charge from empty to full results in a "learn cycle." First, the active empty point must be detected. The learn flag (LEARNF) is set at this point. Second, once charging starts, the charge must ______________________________________________________________________________________ 15 DS2788 Application Parameters DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers continue uninterrupted until the battery is charged to full. Upon detecting full, LEARNF is cleared, the chargeto-full (CHGTF) flag is set, and the age scalar (AS) is adjusted according to the learned capacity of the cell. ACR Housekeeping The ACR register value is adjusted occasionally to maintain the coulomb count within the model curve boundaries. When the battery is charged to full (CHGTF set), the ACR is set equal to the age-scaled full lookup value at the present temperature. If a learn cycle is in progress, correction of the ACR value occurs after the age scalar (AS) is updated. When an empty condition is detected (AEF or LEARNF set), the ACR adjustment is conditional. If AEF is set and LEARNF is not, the active empty point was not detected and the battery is likely below the active empty capacity of the model. The ACR is set to the active empty model value only if it is greater than the active empty model value. If LEARNF is set, the battery is at the active empty point and the ACR is set to the active empty model value. Full Detect Full detection occurs when the voltage (VOLT) readings remain continuously above the VCHG threshold for the period between two average current (IAVG) readings, where both IAVG readings are below IMIN. The two consecutive IAVG readings must also be positive and nonzero. This ensures that removing the battery from the charger does not result in a false detection of full. Full detect sets the charge-to-full (CHGTF) bit in the Status (STATUS) register. Active Empty Point Detect Active empty point detection occurs when the Voltage register drops below the VAE threshold and the two previous current readings are above IAE. This captures the event of the battery reaching the active empty point. Note that the two previous current readings must be negative and greater in magnitude than IAE, that is, a larger discharge current than specified by the IAE threshold. Qualifying the voltage level with the discharge rate ensures that the active empty point is not detected at loads much lighter than those used to construct the model. Also, active empty must not be detected when a deep discharge at a very light load is followed by a load greater than IAE. Either case would cause a learn cycle on the following charge-to-full to include part of the standby capacity in the measurement of the active capacity. Active empty detection sets the learn flag bit (LEARNF) in STATUS. 16 Result Registers The DS2788 processes measurement and cell characteristics on a 3.5s interval and yields seven result registers. The result registers are sufficient for direct display to the user in most applications. The host system can produce customized values for system use or user display by combining measurement, result, and user EEPROM values. FULL(T): The full capacity of the battery at the present temperature is reported normalized to the +50C full value. This 15-bit value reflects the cell model full value at the given temperature. FULL(T) reports values between 100% and 50% with a resolution of 61ppm (precisely 2-14). Though the register format permits values greater than 100%, the register value is clamped to a maximum value of 100%. Active Empty, AE(T): The active empty capacity of the battery at the present temperature is reported normalized to the +50C full value. This 13-bit value reflects the cell model active empty at the given temperature. AE(T) reports values between 0% and 49.8% with a resolution of 61ppm (precisely 2-14). Standby Empty, SE(T): The standby empty capacity of the battery at the present temperature is reported normalized to the +50C full value. This 13-bit value reflects the cell model standby empty value at the current temperature. SE(T) reports values between 0% and 49.8% with a resolution of 61ppm (precisely 2-14). Remaining Active Absolute Capacity, RAAC [mAh]: RAAC reports the capacity available under the current temperature conditions at the active empty discharge rate (IAE) to the active empty point in absolute units of milliamp/hours (mAh). RAAC is 16 bits. See Figure 14. Remaining Standby Absolute Capacity, RSAC [mAh]: RSAC reports the capacity available under the current temperature conditions at the standby empty discharge rate (ISE) to the standby empty point capacity in absolute units of mAh. RSAC is 16 bits. See Figure 15. Remaining Active Relative Capacity, RARC [%]: RARC reports the capacity available under the current temperature conditions at the active empty discharge rate (IAE) to the active empty point in relative units of percent. RARC is 8 bits. See Figure 16. Remaining Standby Relative Capacity, RSRC [%]: RSRC reports the capacity available under the current temperature conditions at the standby empty discharge rate (ISE) to the standby empty point capacity in relative units of percent. RSRC is 8 bits. See Figure 17. ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers MSB--ADDRESS 02h 215 DS2788 READ ONLY RAAC 214 213 212 211 LSB--ADDRESS 03h 210 29 MSb 28 27 LSb MSb 26 25 24 23 22 21 20 LSb UNITS: 1.6mAhr Figure 14. Remaining Active Absolute Capacity Register Format READ ONLY RSAC MSB--ADDRESS 04h 214 213 212 211 210 LSB--ADDRESS 05h 29 28 27 LSb MSb 26 25 24 23 22 21 20 LSb UNITS: 1.6mAhr Figure 15. Remaining Standby Absolute Capacity Register Format READ ONLY RARC ADDRESS 06h 27 26 25 24 23 22 21 MSb 20 LSb UNITS: 1% Figure 16. Remaining Active Relative Capacity Register Format READ ONLY RSRC ADDRESS 07h 27 26 25 24 MSb 23 22 21 20 LSb UNITS: 1% Figure 17. Remaining Standby Relative Capacity Register Format ______________________________________________________________________________________ 17 DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Calculation of Results RAAC [mAh] = (ACR[mVh] - AE(T) x FULL50[mVh]) x RSNSP [mhos] RSAC [mAh] = (ACR[mVh] - SE(T) x FULL50[mVh]) x RSNSP [mhos] RARC [%] = 100% x (ACR[mVh] - AE(T) x FULL50[mVh]) / {(AS x FULL(T) - AE(T)) x FULL50[mVh]} RSRC [%] = 100% x (ACR[mVh] - SE(T) x FULL50[mVh]) / {(AS x FULL(T) - SE(T)) x FULL50[mVh]} Status Register The Status register contains bits that report the device status. The bits can be set internally by the DS2788. The CHGTF, AEF, SEF, and LEARNF bits are read-only ADDRESS Field bits that can be cleared by hardware. The UVF and PORF bits can only be cleared through the 1-Wire interface. 01h Bit BIT DEFINITION Format Allowable Values CHGTF 7 Read Only Charge Termination Flag Set to 1 when: (VOLT > VCHG) and (0 < IAVG < IMIN) continuously for a period between two IAVG register updates (28s to 56s). Cleared to 0 when: RARC < 90% AEF 6 Read Only Active Empty Flag Set to 1 when: VOLT < VAE Cleared to 0 when: RARC > 5% SEF 5 Read Only Standby Empty Flag Set to 1 when: RSRC < 10% Cleared to 0 when: RSRC > 15% LEARNF 4 Read Only Learn Flag--When set to 1, a charge cycle can be used to learn battery capacity. Set to 1 when: (VOLT falls from above VAE to below VAE) and (CURRENT > IAE) Cleared to 0 when: (CHGTF = 1) or (CURRENT < 0) or (ACR = 0**) or (ACR written or recalled from EEPROM) or (SLEEP Entered). Reserved 3 Read Only Undefined UVF 2 Read/Write* Undervoltage Flag Set to 1 when: VOLT < VSLEEP Cleared to 0 by: User PORF 1 Read/Write* Power-On Reset Flag--Useful for reset detection, see text below. Set to 1 when: upon power-up by hardware. Cleared to 0 by: User Reserved 0 Read Only Undefined *This bit can be set by the DS2788, and can only be cleared through the 1-Wire interface. **LEARNF is only cleared if ACR reaches 0 after VOLT < VAE. Figure 18. Status Register Format 18 ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers All Control register bits are read and write accessible. The Control register is recalled from parameter EEPROM memory at power-up. Register bit values can ADDRESS 60h be modified in shadow RAM after power-up. Shadow RAM values can be saved as the power-up default values by using the Copy Data command. BIT DEFINITION Field Bit Format Allowable Values NBEN 7 Read/Write Negative Blanking Enable 0: Allows negative current readings to always be accumulated. 1: Enables blanking of negative current readings up to -25V. UVEN 6 Read/Write Undervoltage SLEEP Enable 0: Disables transition to SLEEP mode based on VIN voltage. 1: Enables transition to SLEEP mode if VIN < VSLEEP and DQ are stable at either logic level for t SLEEP. PMOD 5 Read/Write Power Mode Enable 0: Disables transition to SLEEP mode based on DQ logic state. 1: Enables transition to SLEEP mode if DQ is at a logic-low for t SLEEP. RNAOP 4 Read/Write Read Net Address Op Code 0: Read net address command = 33h. 1: Read net address command = 39h. DC 3 Read/Write Display Control 0: Enables LED5 fuel-gauge display. 1: Enables LED4 fuel-gauge display. Reserved 0:2 Undefined Figure 19. Control Register Format ______________________________________________________________________________________ 19 DS2788 Control Register DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Special Feature Register All Special Feature register bits are read and write accessible, with default values specified in each bit definition. ADDRESS 15h Field Bit Reserved 1:7 PIOSC 0 BIT DEFINITION Format Allowable Values Undefined Read/Write PIO Sense and Control Read values: 0: PIO pin VIL 1: PIO pin VIH Write values: 0: Activates PIO pin open-drain output driver, forcing the PIO pin low. 1: Disables the output driver, allowing the PIO pin to be pulled high or used as an input. Power-up and SLEEP mode default: 1 (PIO pin is high-Z). Note: PIO pin has weak pulldown. Figure 20. Special Feature Register Format Fuel-Gauge Display The DS2788 provides five open-drain drivers capable of sinking 30mA. These can be used to directly drive either 4 or 5 LEDs to display Remaining Active Relative Pack Capacity (RARC). The LEDs are enabled when the PIO is configured as an input and the PIO pin recognizes a rising edge. The display lights for 4s and then is disabled regardless of the state of the PIO pin. Further presses or releases of the button connected to the PIO pin after the 100ms debounce delay causes the display to be enabled (the display does not light continuously if the button is held down). Table 2 summarizes how the LEDs are enabled. B signifies that the LED is blinking at a 50% duty cycle, 0.5s on, 0.5s off, to be repeated for the display time of 4s. L signifies the pin is pulled low, and the LED is lit. X signifies the pin is high impedance, and the LED is unlit. 20 Table 2. Fuel-Gauge Display Summary CAPACITY 5 LEDs, DC: 0 LED5-LED1 4 LEDs, DC: 1 LED4-LED1 RARC 10 XXXXB XXXB 10 < RARC 20 XXXXL XXXL 20 < RARC 25 XXXLL XXXL 25 < RARC 40 XXXLL XXLL 40 < RARC 50 XXLLL XXLL 50 < RARC 60 XXLLL XLLL 60 < RARC 75 XLLLL XLLL 75 < RARC 80 XLLLL LLLL 80 < RARC 100 LLLLL LLLL ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers The EEPROM register provides access control of the EEPROM blocks. EEPROM blocks can be locked to prevent alteration of data within the block. Locking a block ADDRESS Field EEC 1Fh Bit 7 LOCK 6 Reserved 2:6 BL1 BL0 1 0 disables write access to the block. Once a block is locked, it cannot be unlocked. Read access to EEPROM blocks is unaffected by the lock/unlock status. BIT DEFINITION Format Allowable Values Read Only EEPROM Copy Flag Set to 1 when: Copy Data command executed. Cleared to 0 when: Copy Data command completes. Note: While EEC = 1, writes to EEPROM addresses are ignored. Power-up default: 0 Read/Write to 1 EEPROM Lock Enable Host write to 1: Enables the Lock command. Host must issue Lock command as next command after writing lock enable bit to 1. Cleared to 0 when: Lock command completes or when Lock command is not the command issued immediately following the Write command used to set the lock enable bit. Power-up default: 0 Undefined Read Only EEPROM Block 1 Lock Flag (Parameter EEPROM 60h-7Fh) 0: EEPROM is not locked. 1: EEPROM block is locked. Factory default: 0 Read Only EEPROM Block 0 Lock Flag (User EEPROM 20h-2Fh) 0: EEPROM is not locked. 1: EEPROM block is locked. Factory default: 0 Figure 21. EEPROM Register Format ______________________________________________________________________________________ 21 DS2788 EEPROM Register DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Memory The DS2788 has a 256-byte linear memory space with registers for instrumentation, status, and control, as well as EEPROM memory blocks to store parameters and user information. Byte addresses designated as "Reserved" return undefined data when read. Reserved bytes should not be written. Several byte registers are paired into two-byte registers in order to store 16-bit values. The MSB of the 16-bit value is located at a even address and the LSB is located at the next address (odd) byte. When the MSB of a two-byte register is read, the MSB and LSB are latched simultaneously and held for the duration of the Read-Data command to prevent updates to the LSB during the read. This ensures synchronization between the two register bytes. For consistent results, always read the MSB and the LSB of a two-byte register during the same Read Data command sequence. EEPROM memory consists of the NV EEPROM cells overlaid with volatile shadow RAM. The Read Data and Write Data commands allow the 1-Wire interface to directly accesses only the shadow RAM. The Copy Data and Recall Data function commands transfer data between the shadow RAM and the EEPROM cells. To modify the data stored in the EEPROM cells, data must be written to the shadow RAM and then copied to the EEPROM. To verify the data stored in the EEPROM cells, the EEPROM data must be recalled to the shadow RAM and then read from the shadow RAM. User EEPROM A 16-byte user EEPROM memory (block 0, addresses 20h-2Fh) provides NV memory that is uncommitted to other DS2788 functions. Accessing the user EEPROM block does not affect the operation of the DS2788. User EEPROM is lockable, and once locked, write access is not allowed. The battery pack or host system manufacturer can program lot codes, date codes, and other manufacturing, warranty, or diagnostic information and then lock it to safeguard the data. User EEPROM can also store parameters for charging to support different size batteries in a host device as well as auxiliary model data such as time to full charge estimation parameters. Parameter EEPROM Model data for the cells and application operating parameters are stored in the parameter EEPROM memory (block 1, addresses 60h-7Fh). The ACR (MSB and LSB) and AS registers are automatically saved to EEPROM when the RARC result crosses 4% boundaries. This allows the DS2788 to be located outside the protection FETs. In this manner, if a protection device is triggered, the DS2788 cannot lose more that 4% of charge or discharge data. Table 3. Memory Map ADDRESS (HEX) 22 DESCRIPTION READ/WRITE 00 Reserved R 01 STATUS: Status Register 02 RAAC: Remaining Active Absolute Capacity MSB R 03 RAAC: Remaining Active Absolute Capacity LSB R 04 RSAC: Remaining Standby Absolute Capacity MSB R 05 RSAC: Remaining Standby Absolute Capacity LSB R 06 RARC: Remaining Active Relative Capacity R 07 RSRC: Remaining Standby Relative Capacity R 08 IAVG: Average Current Register MSB R R/W 09 IAVG: Average Current Register LSB R 0A TEMP: Temperature Register MSB R 0B TEMP: Temperature Register LSB R 0C VOLT: Voltage Register MSB R 0D VOLT: Voltage Register LSB R 0E CURRENT: Current Register MSB R 0F CURRENT: Current Register LSB 10 ACR: Accumulated Current Register MSB R/W* 11 ACR: Accumulated Current Register LSB R/W* ______________________________________________________________________________________ R Stand-Alone Fuel-Gauge IC with LED Display Drivers DS2788 Table 3. Memory Map (continued) ADDRESS (HEX) DESCRIPTION READ/WRITE 12 ACRL: Low Accumulated Current Register MSB 13 ACRL: Low Accumulated Current Register LSB 14 AS: Age Scalar R/W* 15 SFR: Special Feature Register R/W 16 FULL: Full Capacity MSB R 17 FULL: Full Capacity LSB R 18 AE: Active Empty MSB R 19 AE: Active Empty LSB R 1A SE: Standby Empty MSB R 1B SE: Standby Empty LSB R Reserved -- 1C to 1E 1F R R EEPROM: EEPROM Register R/W 20 to 2F User EEPROM, Lockable, Block 0 R/W 30 to 5F Reserved -- 60 to 7F Parameter EEPROM, Lockable, Block 1 80 to AD Reserved -- AE FVGAIN: Factory Voltage Gain MSB R AF FVGAIN: Factory Voltage Gain LSB R B0 FRSGAIN: Factory Sense Resistor Gain MSB R B1 FRSGAIN: Factory Sense Resistor Gain LSB R Reserved -- B2 to FF R/W *Register value is automatically saved to EEPROM during ACTIVE mode operation and recalled from EEPROM on power-up. Table 4. Parameter EEPROM Memory Block 1 ADDRESS (HEX) DESCRIPTION ADDRESS (HEX) DESCRIPTION 60 CONTROL: Control Register 70 AE Segment 4 Slope 61 AB: Accumulation Bias 71 AE Segment 3 Slope 62 AC: Aging Capacity MSB 72 AE Segment 2 Slope 63 AC: Aging Capacity LSB 73 AE Segment 1 Slope 64 VCHG: Charge Voltage 74 SE Segment 4 Slope 65 IMIN: Minimum Charge Current 75 SE Segment 3 Slope 66 VAE: Active Empty Voltage 76 SE Segment 2 Slope 67 IAE: Active Empty Current 77 SE Segment 1 Slope 68 Active Empty 50 78 RSGAIN: Sense Resistor Gain MSB 69 RSNSP: Sense Resistor Prime 79 RSGAIN: Sense Resistor Gain LSB 6A Full 50 MSB 7A RSTC: Sense Resistor Temp Coefficient 6B Full 50 LSB 7B COB: Current Offset Bias 6C Full Segment 4 Slope 7C TBP23 6D Full Segment 3 Slope 7D TBP12 6E Full Segment 2 Slope 7E VGAIN: Voltage Gain MSB 6F Full Segment 1 Slope 7F VGAIN: Voltage Gain LSB ______________________________________________________________________________________ 23 DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers 1-Wire Bus System The 1-Wire bus is a system that has a single bus master and one or more slaves. A multidrop bus is a 1-Wire bus with multiple slaves. A single-drop bus has only one slave device. In all instances, the DS2788 is a slave device. The bus master is typically a microprocessor in the host system. The discussion of this bus system consists of four topics: 64-bit net address, hardware configuration, transaction sequence, and 1-Wire signaling. 64-Bit Net Address Each DS2788 has a unique, factory-programmed 1-Wire net address that is 64 bits in length. The first eight bits are the 1-Wire family code (32h for DS2788). The next 48 bits are a unique serial number. The last eight bits are a cyclic redundancy check (CRC) of the first 56 bits (see Figure 22). The 64-bit net address and the 1-Wire I/O circuitry built into the device enable the DS2788 to communicate through the 1-Wire protocol detailed in the 1-Wire Bus System section. CRC Generation The DS2788 has an 8-bit CRC stored in the MSB of its 1-Wire net address. To ensure error-free transmission of the address, the host system can compute a CRC value from the first 56 bits of the address and compare it to the CRC from the DS2788. The host system is responsible for verifying the CRC value and taking action as a result. The DS2788 does not compare CRC 8-BIT CRC values and does not prevent a command sequence from proceeding as a result of a CRC mismatch. Proper use of the CRC can result in a communication channel with a very high level of integrity. The CRC can be generated by the host using a circuit consisting of a shift register and XOR gates as shown in Figure 23, or it can be generated in software. Additional information about the Maxim 1-Wire CRC is available in Application Note 27: Understanding and Using Cyclic Redundancy Checks with Maxim iButton Products. In the circuit in Figure 23, the shift register bits are initialized to 0. Then, starting with the LSb of the family code, one bit at a time is shifted in. After the 8th bit of the family code has been entered, then the serial number is entered. After the 48th bit of the serial number has been entered, the shift register contains the CRC value. Hardware Configuration Because the 1-Wire bus has only a single line, it is important that each device on the bus be able to drive it at the appropriate time. To facilitate this, each device attached to the 1-Wire bus must connect to the bus with open-drain or three-state output drivers. The DS2788 uses an open-drain output driver as part of the bidirectional interface circuitry shown in Figure 24. If a bidirectional pin is not available on the bus master, separate output and input pins can be connected together. 48-BIT SERIAL NUMBER MSb 8-BIT FAMILY CODE (32h) LSb Figure 22. 1-Wire Net Address Format INPUT MSb XOR XOR LSb XOR Figure 23. 1-Wire CRC Generation Block Diagram iButton is a registered trademark of Maxim Integrated Products, Inc. 24 ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers Transaction Sequence The protocol for accessing the DS2788 through the 1-Wire port is as follows: * Initialization * Net Address Commands * Function Command * Transaction/Data The sections that follow describe each of these steps in detail. All transactions of the 1-Wire bus begin with an initialization sequence consisting of a reset pulse transmitted by the bus master, followed by a presence pulse simultaneously transmitted by the DS2788 and any other slaves on the bus. The presence pulse tells the bus master that one or more devices are on the bus and ready to operate. For more details, see the 1-Wire Signaling section. Net Address Commands Once the bus master has detected the presence of one or more slaves, it can issue one of the net address commands described in the following paragraphs. The name of each ROM command is followed by the 8-bit op code for that command in square brackets. Figure 25 presents a transaction flowchart of the net address commands. Read Net Address [33h or 39h]. This command allows the bus master to read the DS2788's 1-Wire net address. This command can only be used if there is a single slave on the bus. If more than one slave is present, a data collision occurs when all slaves try to transmit at the same time (open drain produces a wired-AND result). The RNAOP bit in the Status register selects the op code for this command, with RNAOP = 0 indicating 33h and RNAOP = 1 indicating 39h. VPULLUP (2.0V TO 5.5V) DS2788 1-Wire PORT BUS MASTER 4.7k Rx Rx 0.2A (TYP) Tx Rx = RECEIVE Tx = TRANSMIT Tx 100 MOSFET Figure 24. 1-Wire Bus Interface Circuitry ______________________________________________________________________________________ 25 DS2788 The 1-Wire bus must have a pullup resistor at the busmaster end of the bus. For short line lengths, the value of this resistor should be approximately 5k. The idle state for the 1-Wire bus is high. If, for any reason, a bus transaction must be suspended, the bus must be left in the idle state to properly resume the transaction later. If the bus is left low for more than 120s (16s for overdrive speed), slave devices on the bus begin to interpret the low period as a reset pulse, effectively terminating the transaction. The DS2788 can operate in two communication speed modes, standard and overdrive. The speed mode is determined by the input logic level of the OVD pin with a logic 0 selecting standard speed and a logic 1 selecting overdrive speed. The OVD pin must be at a stable logic level of 0 or 1 before initializing a transaction with a reset pulse. All 1-Wire devices on a multinode bus must operate at the same communication speed for proper operation. 1-Wire timing for both standard and overdrive speeds are listed in the Electrical Characteristics: 1-Wire Interface tables. DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Match Net Address [55h]. This command allows the bus master to specifically address one DS2788 on the 1-Wire bus. Only the addressed DS2788 responds to any subsequent function command. All other slave devices ignore the function command and wait for a reset pulse. This command can be used with one or more slave devices on the bus. Skip Net Address [CCh]. This command saves time when there is only one DS2788 on the bus by allowing the bus master to issue a function command without specifying the address of the slave. If more than one slave device is present on the bus, a subsequent function command can cause a data collision when all slaves transmit data at the same time. Search Net Address [F0h]. This command allows the bus master to use a process of elimination to identify the 1-Wire net addresses of all slave devices on the bus. The search process involves the repetition of a simple three-step routine: read a bit, read the complement of the bit, then write the desired value of that bit. The bus master performs this simple three-step routine on each bit location of the net address. After one complete pass through all 64 bits, the bus master knows the address of one device. The remaining devices can then be identified on additional iterations of the process. See Chapter 5 of the Book of iButton Standards for a comprehensive discussion of a net address search, including an actual example (www.maxim-ic.com/ibuttonbook). Resume [A5h]. This command increases data throughput in multidrop environments where the DS2788 needs to be accessed several times. Resume is similar to the Skip Net Address command in that the 64-bit net address does not have to be transmitted each time the DS2788 is accessed. After successfully executing a Match Net Address command or Search Net Address command, an internal flag is set in the DS2788. When the flag is set, the DS2788 can be repeatedly accessed through the Resume command function. Accessing another device on the bus clears the flag, thus preventing two or more devices from simultaneously responding to the Resume command function. 26 Function Commands After successfully completing one of the net address commands, the bus master can access the features of the DS2788 with any of the function commands described in the following paragraphs. The name of each function is followed by the 8-bit op code for that command in square brackets. Table 5 summarizes the function commands. Read Data [69h, XX]. This command reads data from the DS2788 starting at memory address XX. The LSb of the data in address XX is available to be read immediately after the MSb of the address has been entered. Because the address is automatically incremented after the MSb of each byte is received, the LSb of the data at address XX + 1 is available to be read immediately after the MSb of the data at address XX. If the bus master continues to read beyond address FFh, data is read starting at memory address 00 and the address is automatically incremented until a reset pulse occurs. Addresses labeled "Reserved" in the memory map contain undefined data values. The Read Data command can be terminated by the bus master with a reset pulse at any bit boundary. Reads from EEPROM block addresses return the data in the shadow RAM. A Recall Data command is required to transfer data from the EEPROM to the shadow. See the Memory section for more details. Write Data [6Ch, XX]. This command writes data to the DS2788 starting at memory address XX. The LSb of the data to be stored at address XX can be written immediately after the MSb of address has been entered. Because the address is automatically incremented after the MSb of each byte is written, the LSb to be stored at address XX + 1 can be written immediately after the MSb to be stored at address XX. If the bus master continues to write beyond address FFh, the data starting at address 00 is overwritten. Writes to read-only addresses, reserved addresses, and locked EEPROM blocks are ignored. Incomplete bytes are not written. Writes to unlocked EEPROM block addresses modify the shadow RAM. A Copy Data command is required to transfer data from the shadow to the EEPROM. See the Memory section for more details. ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers Lock [6Ah, XX]. This command locks (write protects) the block of EEPROM memory containing memory address XX. The lock bit in the EEPROM register must be set to 1 before the lock command is executed. To help prevent unintentional locks, one must issue the lock command immediately after setting the lock bit (EEPROM register, address 1Fh, bit 06) to a 1. If the lock bit is 0 or if setting the lock bit to 1 does not immediately precede the lock command, the lock command has no effect. The lock command is permanent; a locked block can never be written again. Table 5. Function Commands COMMAND DESCRIPTION COMMAND PROTOCOL BUS STATE AFTER COMMAND PROTOCOL BUS DATA Read Data Reads data from memory starting at address XX. 69h, XX Master Rx Up to 256 bytes of data Write Data Writes data to memory starting at address XX. 6Ch, XX Master Tx Up to 256 bytes of data Copy Data Copies shadow RAM data to EEPROM block containing address XX. 48h, XX Master Reset None Recall Data Recalls EEPROM block containing address XX to RAM. B8h, XX Master Reset None Permanently locks the block of EEPROM containing address XX. 6Ah, XX Master Reset None Lock ______________________________________________________________________________________ 27 DS2788 Copy Data [48h, XX]. This command copies the contents of the EEPROM shadow RAM to EEPROM cells for the EEPROM block containing address XX. Copy data commands that address locked blocks are ignored. While the copy data command is executing, the EEC bit in the EEPROM register is set to 1 and writes to EEPROM addresses are ignored. Reads and writes to non-EEPROM addresses can still occur while the copy is in progress. The copy data command takes tEEC time to execute, starting on the next falling edge after the address is transmitted. Recall Data [B8h, XX]. This command recalls the contents of the EEPROM cells to the EEPROM shadow memory for the EEPROM block containing address XX. DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers MASTER Tx RESET PULSE DS2788 Tx PRESENCE PULSE MASTER Tx NET ADDRESS COMMAND 33h/39h READ NO NO 55h MATCH F0h SEARCH YES YES YES CCh SKIP YES NO A5h RESUME DS2788 Tx BIT 0 MASTER Tx BIT 0 YES CLEAR RESUME RESUME FLAG SET? YES DS2788 Tx SERIAL NUMBER 6 BYTES BIT O MATCH? NO NO YES DS2788 Tx CRC 1 BYTE BIT O MATCH? MASTER Tx FUNCTION COMMAND MASTER Tx FUNCTION COMMAND YES DS2788 Tx BIT 1 MASTER Tx BIT 1 DS2788 Tx BIT 1 MASTER Tx BIT 1 BIT 1 MATCH? CLEAR RESUME YES MASTER Tx FUNCTION COMMAND MASTER Tx BIT 63 NO NO BIT 1 MATCH? YES DS2788 Tx BIT 63 DS2788 Tx BIT 63 MASTER Tx BIT 63 SET RESUME FLAG YES BIT 1 MATCH? NO CLEAR RESUME Figure 25. Net Address Command Flowchart 28 NO DS2788 Tx BIT 0 MASTER Tx BIT 0 DS2788 Tx FAMILY CODE 1 BYTE NO ______________________________________________________________________________________ NO Stand-Alone Fuel-Gauge IC with LED Display Drivers Write-Time Slots A write-time slot is initiated when the bus master pulls the 1-Wire bus from a logic-high (inactive) level to a logic-low level. There are two types of write-time slots: write-1 and write-0. All write-time slots must be tSLOT in duration with a 1s minimum recovery time, t REC , between cycles. The DS2788 samples the 1-Wire bus line between 15s and 60s (between 2s and 6s for overdrive speed) after the line falls. If the line is high when sampled, a write-1 occurs. If the line is low when sampled, a write-0 occurs (see Figure 27). For the bus master to generate a write-1 time slot, the bus line must be pulled low and then released, allowing the line to be pulled high within 15s (2s for overdrive speed) after the start of the write-time slot. For the host to generate a write-0 time slot, the bus line must be pulled low and held low for the duration of the write-time slot. Read-Time Slots A read-time slot is initiated when the bus master pulls the 1-Wire bus line from a logic-high level to a logic-low level. The bus master must keep the bus line low for at least 1s and then release it to allow the DS2788 to present valid data. The bus master can then sample the data tRDV from the start of the read-time slot. By the end of the read-time slot, the DS2788 releases the bus line and allows it to be pulled high by the external pullup resistor. All read-time slots must be t SLOT in duration with a 1s minimum recovery time, t REC , between cycles. See Figure 27 for more information. tRSTL tRSTH tPDH tPDL PK+ DQ PK- LINE TYPE LEGEND: BUS MASTER ACTIVE LOW DS2788 ACTIVE LOW RESISTOR PULLUP Figure 26. 1-Wire Initialization Sequence ______________________________________________________________________________________ 29 DS2788 1-Wire Signaling The 1-Wire bus requires strict signaling protocols to ensure data integrity. The four protocols used by the DS2788 are as follows: the initialization sequence (reset pulse followed by presence pulse), write-0, write-1, and read data. All these types of signaling except the presence pulse are initiated by the bus master. Figure 26 shows the initialization sequence required to begin any communication with the DS2788. A presence pulse following a reset pulse indicates that the DS2788 is ready to accept a net address command. The bus master transmits (Tx) a reset pulse for tRSTL. The bus master then releases the line and goes into receive mode (Rx). The 1-Wire bus line is then pulled high by the pullup resistor. After detecting the rising edge on the DQ pin, the DS2788 waits for tPDH and then transmits the presence pulse for tPDL. DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers WRITE-0 SLOT WRITE-1 SLOT tSLOT tSLOT tLOW0 tLOW tREC VPULLUP GND MIN > 1s DS2788 SAMPLE WINDOW TYP MAX MIN DS2788 SAMPLE WINDOW TYP MAX MODE: STANDARD 15s 15s 30s 15s 15s 30s OVERDRIVE 2s 1s 3s 2s 1s 3s READ-0 SLOT READ-1 SLOT tSLOT tSLOT tREC VPULLUP GND > 1s MASTER SAMPLE WINDOW tRD MASTER SAMPLE WINDOW tRD LINE TYPE LEGEND: BUS MASTER ACTIVE LOW DS2788 ACTIVE LOW BOTH BUS MASTER AND DS2788 ACTIVE LOW RESISTOR PULLUP Figure 27. 1-Wire Write- and Read-Time Slots 30 ______________________________________________________________________________________ Stand-Alone Fuel-Gauge IC with LED Display Drivers PK+ 4.5V REGULATOR DISPLAY LED1 LED2 LED3 LED4 DS2788 LED5 150 DATA DQ SNS N-CELL Li+ BATTERY (N - 1) R PIO VDD VMA VIN OVD DVSS VSS 0.1F R PROTECTION CIRCUIT 5.6V RSNS PK- Package Information For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE TYPE PACKAGE CODE DOCUMENT NO. 14 TSSOP U14+1 21-0066 ______________________________________________________________________________________ 31 DS2788 Typical Operating Circuit DS2788 Stand-Alone Fuel-Gauge IC with LED Display Drivers Revision History REVISION NUMBER REVISION DATE 0 10/07 1 2 DESCRIPTION PAGES CHANGED Initial release. -- 6/08 Added Figures 14 to 17 for the RAAC, RSAC, RARC, and RSRC descriptions. 17 5/09 Changed operations voltage to 4.5V maximum. 2-4, 6, 7, 31 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 32 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 (c) 2009 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.