PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET(R) Power MOSFET D VDSS = 40V RDS(on) = 3.7m G Description ID = 75A S This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB IRF1404ZGPbF Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C Parameter Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current 190 130 75 750 220 c Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range d c g Parameter Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient www.irf.com i W 1.5 20 320 480 See Fig.12a, 12b, 15, 16 W/C V mJ A mJ C i RJC A -55 to + 175 Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance h Units i 300 (1.6mm from case ) 10 lbf in (1.1N m) y y Typ. Max. --- 0.65 0.50 --- --- 62 Units C/W 1 07/07/10 IRF1404ZGPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ RDS(on) Min. Typ. Max. Units 40 --- --- Breakdown Voltage Temp. Coefficient --- 0.033 --- Static Drain-to-Source On-Resistance --- 2.7 3.7 V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A e VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 250A gfs IDSS Forward Transconductance 170 --- --- V VDS = 25V, ID = 75A Drain-to-Source Leakage Current --- --- 20 A --- --- 250 Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 IGSS VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Qg Total Gate Charge --- 100 150 Qgs Gate-to-Source Charge --- 31 --- Qgd Gate-to-Drain ("Miller") Charge --- 42 --- td(on) Turn-On Delay Time --- 18 --- VDD = 20V tr Rise Time --- 110 --- ID = 75A td(off) Turn-Off Delay Time --- 36 --- tf Fall Time --- 58 --- VGS = 10V LD Internal Drain Inductance --- 4.5 --- Between lead, LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Input Capacitance --- 4340 --- and center of die contact VGS = 0V Coss Output Capacitance --- 1030 --- Crss Reverse Transfer Capacitance --- 550 --- Coss Output Capacitance --- 3300 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 920 --- VGS = 0V, VDS = 32V, = 1.0MHz Coss eff. Effective Output Capacitance --- 1350 --- VGS = 0V, VDS = 0V to 32V ID = 75A nC VDS = 32V VGS = 10V ns nH RG = 3.0 e e VDS = 25V pF = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 750 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V trr Reverse Recovery Time --- 28 42 ns Qrr Reverse Recovery Charge --- 34 51 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF1404ZGPbF 1000 1000 VGS 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS TOP 10 4.5V 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 25C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20s PULSE WIDTH Tj = 175C T J = 175C 100 10 VDS = 15V 20s PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com T J = 175C 160 120 T J = 25C 80 40 VDS = 15V 20s PULSE WIDTH 0 11.0 0 40 80 120 160 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF1404ZGPbF 8000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 6000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 4000 2000 Coss Crss ID= 75A VDS= 32V VDS= 20V 16 12 8 4 0 0 1 10 0 100 VDS, Drain-to-Source Voltage (V) 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 T J = 175C 100.0 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 120 160 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 40 Q G Total Gate Charge (nC) 1000 100 100sec 10 1 1.8 OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec Tc = 25C Tj = 175C Single Pulse 0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1404ZGPbF 200 2.0 ID , Drain Current (A) 160 120 80 40 0 25 50 75 100 125 150 175 T C , Case Temperature (C) ID = 75A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance LIMITED BY PACKAGE 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1404ZGPbF DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 600 15V TOP 500 BOTTOM ID 31A 53A 75A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 10 V ID = 250A 3.0 2.0 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF1404ZGPbF Avalanche Current (A) 10000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax Duty Cycle = Single Pulse 1000 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF1404ZGPbF D.U.T Driver Gate Drive + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF1404ZGPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF1404ZGPbF TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRFB4310GPBF INT ERNATIONAL RECTIFIER LOGO Note: "G" s uffix in part number indicates "Halogen - Free" Note: "P" in ass embly line pos ition indicates "Lead - Free" AS SEMBLY LOT CODE PART NUMBER DATE CODE: Y= LAS T DIGIT OF CALENDAR YEAR WW= WORK WEEK X= FACTORY CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.11mH This value determined from sample failure population. 100% RG = 25, IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2010 10 www.irf.com